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    MARK PD SOT 23 Search Results

    MARK PD SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARK PD SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking pd

    Abstract: KRA104S
    Text: SEMICONDUCTOR KRA104S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PD 1 2 Item Marking Description Device Mark PD KRA104S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRA104S OT-23 marking pd KRA104S

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    sot-23 single diode mark PD

    Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS


    Original     		PDF L2N7002LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    SC-75

    Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
    Text: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit


    Original     		PDF L2SK3019LT1G 100mA) 3000/Tape L2SK3019LT3G 000/Tape 195mm 150mm 3000PCS/Reel SC-75 sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019

    BC557

    Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 Temperat30 BC557 BC557 bc556 transistor BC559 BC856 on semiconductor

    MMBF102

    Abstract: fairchild amplifier Fairchild Semiconductor - Process Fairchild Semiconductor
    Text: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF MMBF102 MMBF102 OT-23 fairchild amplifier Fairchild Semiconductor - Process Fairchild Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF MMBF102 MMBF102 OT-23

    zener 5A6

    Abstract: 5a6 dual zener diode marking code 5a6 Sot 23-5
    Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner 80KPCS/Inner zener 5A6 5a6 dual zener diode marking code 5a6 Sot 23-5

    zener 5A6

    Abstract: 5a6 dual zener diode marking code 5A6 sot 26 marking 33a zener sot23 Dual Zeners in Common Anode marking b marking 33a zener marking code AC sot 23-5 marking 27A sot-23
    Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner 80KPCS/Inner zener 5A6 5a6 dual zener diode marking code 5A6 sot 26 marking 33a zener sot23 Dual Zeners in Common Anode marking b marking 33a zener marking code AC sot 23-5 marking 27A sot-23

    LBZX84C3V3LT1G

    Abstract: LBZX84C5V1LT1G LBZX84C15LT1G LBZX84C75LT1G lbzx84c5v6lt1g lbzx84c18lt1g LBZX84C3V0LT1G LBZX84C3V6LT1G LBZX84C12LT1G LBZX84C36LT1G
    Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes ƽ LBZX84XXXXLT1G We declare that the material of product compliance with RoHS requirements. SERIES 3 1 2 SOT– 23 TO–236AB PLASTIC MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds


    Original     		PDF LBZX84XXXXLT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LBZX84C3V3LT1G LBZX84C5V1LT1G LBZX84C15LT1G LBZX84C75LT1G lbzx84c5v6lt1g lbzx84c18lt1g LBZX84C3V0LT1G LBZX84C3V6LT1G LBZX84C12LT1G LBZX84C36LT1G

    marking E1 sot23-5

    Abstract: G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33
    Text: MC78PC00 Series Low Noise 150 mA Low Drop Out LDO Linear Voltage Regulator The MC78PC00 are a series of CMOS linear voltage regulators with high output voltage accuracy, low supply current, low dropout voltage, and high Ripple Rejection. Each of these voltage regulators consists of


    Original     		PDF MC78PC00 OT-23 OT-23-5 marking E1 sot23-5 G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33

    BC557

    Abstract: No abstract text available
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC557

    BC857A BC857b difference

    Abstract: BC856 BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC857A BC857b difference BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1

    LN2302LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2302LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ Features 3 1 2 High Density Cell Design For Ultra Low On-Resistance SOT– 23 (TO–236AB) Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LN2302LT1G

    sot 23 mark 6C

    Abstract: marking code 6c
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LRK7002WT1G Silicon N-Channel 3 zFeatures 1 1 Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 2 SOT-23 TO-236AB)


    Original     		PDF LRK7002WT1G OT-23 O-236AB) 3000/Tape LRK7002WT3G 10000/Tape 195mm 150mm sot 23 mark 6C marking code 6c

    1d sot-23

    Abstract: M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel


    Original     		PDF LMBTA42LT1G LMBTA43LT1G OT-23 3000/Tape LMBTA42LT3G 10000/Tape 1d sot-23 M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e

    Untitled

    Abstract: No abstract text available
    Text: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)


    Original     		PDF LBC807-16WT1G OT-323 3000/Tape LBC807-25WT1G LBC807-40WT1G

    marking 27A sot-23

    Abstract: tvs SMA MARKING AE marking 6a8
    Text: MMBZ5V6ALT1 Series Preferred Devices 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT–23 Dual Common Anode Zeners for ESD Protection Specification Features: • SOT–23 Package Allows Either Two Separate Unidirectional • • • • •


    Original     		PDF

    LBSS84LT1G

    Abstract: LBSS84LT3G
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF LBSS84LT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner LBSS84LT1G LBSS84LT3G

    marking 15d

    Abstract: No abstract text available
    Text: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT–23 Dual Common Cathode Zeners for ESD Protection 1 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF MMBZ15VDLT1, MMBZ27VCLT1 marking 15d

    YW 431

    Abstract: sot-23 MARKING CODE 431 MAX809 68HC11 MAX809J MAX809L MAX810 code marking MAX809R
    Text: MAX809, MAX810 3-Pin Microprocessor Reset Monitors The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required.


    Original     		PDF MAX809, MAX810 MAX809 MAX810 140msec MAX809/810 YW 431 sot-23 MARKING CODE 431 68HC11 MAX809J MAX809L code marking MAX809R

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138LT1G N–Channel SOT–23 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original     		PDF LBSS138LT1G 236AB) 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 80KPCS/Inner OT-723

    1GM sot-23 transistor

    Abstract: No abstract text available
    Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage


    OCR Scan     		PDF MMBTA06LT1 OT-23 950TPY 037TPY 550REF 022REF 1GM sot-23 transistor