C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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marking JY sot-23
Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Text: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40
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SR520G-30
OD-723
SR651H-40
OD-323
SR521G-30
BAT54T
OT-416
SR751G-40
marking JY sot-23
sot-23 Marking 3D
BAT34
LV4, SMD
SOT-346
sot-23 Marking B1
SR715F
SMD23
bat54 sot-323
B4 SOD-123
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PDF
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BAS28
Abstract: VPS05178 BAS28 JTs
Text: BAS28 Silicon Switching Diode Array 3 For high-speed switching applications Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol
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Original
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BAS28
VPS05178
EHA07008
OT143
EHB00035
EHB00036
Jul-27-2001
EHB00037
BAS28
VPS05178
BAS28 JTs
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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Original
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BAW101.
BAW101
OT143
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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Original
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BAW101.
BAW101
OT143
Applicati00
EHN00019
Feb-03-2003
EHB00104
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PDF
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BAW101
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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Original
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BAW101.
BAW101
OT143
EHN00019
Sep-24-2003
EHB00104
100mA
BAW101
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PDF
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A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
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PDF
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DIN 6784
Abstract: GPS05991 GSO05553 GSO05554 GSO05561 GSO05796 SCT-595 DIN6784 DIN-6784
Text: Package Outlines All dimensions in mm, unless otherwise specified 0.13 1.6 ±0.1 ax 10˚ m cathode marking 1.2 ±0.1 1 7˚ 0.8 ±0.1 2 0.3 0.6 ±0.1 GPS05991 SCD-80 +0.2 0.9 -0.1 1 2.5 ±0.2 +0.15 acc. to DIN 6784 0 ±0.05 A +0.2 cathode marking 1.7 -0.1 +0.2
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GPS05991
SCD-80
OD-323
GSO05561
OT-323
9O05554
GPW05795
MW-12
GPW05969
MW-16
DIN 6784
GPS05991
GSO05553
GSO05554
GSO05561
GSO05796
SCT-595
DIN6784
DIN-6784
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PDF
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BAT17-07
Abstract: VPS05178
Text: BAT17-07 Silicon Schottky Diode 3 For mixer applications in the VHF / UHF range For high-speed switching applications 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAT17-07 57s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings
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BAT17-07
VPS05178
EHA07008
OT143
EHD07108
EHD07109
Jul-31-2001
BAT17-07
VPS05178
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BF772
Abstract: VPS05178
Text: BF772 NPN Silicon RF Transistor 3 For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter
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Original
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BF772
VPS05178
OT143
Jun-27-2001
BF772
VPS05178
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PDF
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sot143 Marking code 53
Abstract: No abstract text available
Text: BF772 NPN Silicon RF Transistor 3 For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter
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Original
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BF772
VPS05178
OT143
sot143 Marking code 53
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PDF
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Untitled
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
Feb-03-2003
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PDF
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sot143 marking code u1s
Abstract: BFP181 BGX50A E6327
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
BFP181
BGX50A
E6327
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PDF
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a3 sot143
Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Text: BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3
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BAR60,
BAR61
BAR60
VPS05178
EHA07013
EHA07014
OT143
a3 sot143
BAR60
BAR61
VPS05178
MARKING 61s
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PDF
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chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
Text: BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BGX50A
VPS05178
EHA00007
OT143
EHB00147
EHB00148
Jul-31-2001
EHB00149
chip Marking 3A3
Diode BGX50A
BGX50A
VPS05178
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PDF
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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PDF
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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PDF
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marking CODE JTS
Abstract: BAS28
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
marking CODE JTS
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PDF
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marking JTs
Abstract: BAS28 BAS28W
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28W,
BAS28,
marking JTs
BAS28
BAS28W
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PDF
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BAT62
Abstract: VPS05178
Text: BAT62 Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2
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Original
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BAT62
VPS05178
EHA07020
OT143
Aug-23-2001
EHD07061
EHD07062
900MHz
BAT62
VPS05178
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PDF
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VPS05178
Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
Text: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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14-099R
VPS05178
EHA07012
OT-143
EHD07089
EHD07090
Oct-07-1999
VPS05178
marking a4 SOT-143
a3 sot143
marking s8s
4C3 diode
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PDF
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A4 marking diode
Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
Text: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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15-099R
VPS05178
EHA07012
OT-143
EHD07077
EHD07078
Oct-07-1999
A4 marking diode
VPS05178
sot-143 s6s
diode marking a4
4C3 diode
15-099R
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PDF
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marking HD SOT89
Abstract: SOT89 MARKING CODE sOT23 marking HD SOT 89 marking CODE package marking sot 223 HD SOT89
Text: Reel Labeling information Device Marking information Case Each reel is labeled with the following information: DPAK Central Part Num ber Customer Part Num ber Purchase Order Num ber Quantity Lot Number Date Code Ship Date Marking Code * * Applies to S O T -2 3 , S O T -1 4 3 , S O T -323,
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OCR Scan
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
marking HD SOT89
SOT89 MARKING CODE
sOT23 marking HD
SOT 89 marking CODE
package marking sot 223
HD SOT89
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PDF
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