B824 transistor
Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
B824 transistor
a564 transistor
335 35K
106 16k
radial capacitor
Thomson TH 5221
transistor a564
pc 8178
T110A335J015AS
a684 transistor
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transistor a564
Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-C-39003/1
T111/T213
CSR91)
MIL-C-39003/4
CSR09)
MIL-C-39003/2
T140/T242
CSR23)
transistor a564
a564 transistor
a684 transistor
CIR 2262
transistor a684
cat 7199 ca
transistor b564
5252 f 0917
capacitor 336 35K 102
CSR 6026
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106 16k
Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
106 16k
capacitor 226 35K 022 electrolytic
335 35K
TANTALUM capacitor 685 35K
a564 transistor
T35 diode
transistor a564
B824 transistor
a684 transistor
XC 7270
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Y parameters of transistors
Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .
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MC3403
2N2219
1N4148
MBC775
Y parameters of transistors
power transistor transistors equivalents
transistor equivalent table
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
transistor 2N2219 data sheet
1721E50R
MARKING 41B
transistor marking pl
y1 marking code transistor
similar 2N2219 transistor
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11147000
Abstract: No abstract text available
Text: EPIC Rectangular Connectors MC Series Plugs & Receptacles 4 CONTACT HE MODULES Rated Voltage: 630V Rated Current: 25A Contacts Sold Separately Plug Receptacle 10399000 10399100 MACHINE CONTACTS: DIAMETER 2.5 MM Marking Track Bags of 100 mm2 0.5 .75 - 1.0
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Untitled
Abstract: No abstract text available
Text: wire guide pressed on (Drahtführung verpresst) 3,5 9,2 with wire guide mounted (state at time of supply) 11,4 mit aufgestzter Drahtführung (Anlieferungszustand) 10,16 3 Kontaktbezeichnung contact marking Flachbandkabelführung: rot 6,83 wire guide: red
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort General Purpose Transistor MMBTA70LT1 PNP Silicon MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO −40 Vdc Emitter−Base Voltage VEBO −4.0 Vdc IC −100 mAdc Collector Current — Continuous 3 1 2 DEVICE MARKING
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MMBTA70LT1
236AF)
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BFR93AW
Abstract: marking code R2S 34
Text: BFR93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW
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BFR93AW
VSO05561
OT323
BFR93AW
marking code R2S 34
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transistor marking R2s
Abstract: Q62702-F1489
Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-323
Q62702-F1489
900MHz
Dec-11-1996
transistor marking R2s
Q62702-F1489
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marking 93A
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
Text: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-143
Q62702-F1144
900MHz
Dec-16-1996
marking 93A
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1144
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marking 93A
Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
Text: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-23
Q62702-F1086
900MHz
Dec-12-1996
marking 93A
Q62702-F1086
marking code R2S sot23
BFR93A
marking R2s
GMA marking
Transistor BFR 900mhz
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BFR93AW
Abstract: VSO05561
Text: BFR93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW
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BFR93AW
VSO05561
OT323
900MHz
Jul-30-2001
BFR93AW
VSO05561
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bfr93a
Abstract: No abstract text available
Text: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 * Short term description 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR93A Marking R2s
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BFR93A
bfr93a
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BFR93AW
Abstract: No abstract text available
Text: BFR93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW
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BFR93AW
VSO05561
OT323
BFR93AW
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marking 93A
Abstract: TRANSISTOR BI 187
Text: BFP 93A NPN Silicon RF Transistor 3 For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A
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VPS05178
OT-143
900MHz
Oct-12-1999
marking 93A
TRANSISTOR BI 187
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marking 93A
Abstract: BFR93A transistor marking R2s
Text: BFR 93A NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration
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VPS05161
OT-23
900MHz
Oct-13-1999
marking 93A
BFR93A
transistor marking R2s
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476 capacitor 10 k
Abstract: 476 35k 476 35k T510 Series KEMET Ultra-Low Tantalum Chip Capacitor Kemet kemet c chip T510 EIA 7260-38
Text: T510 Series - KEMET Ultra-Low ESR Tantalum Chip Capacitor Product Specification 10-28-05 Component Outline Drawing END VIEW SIDE VIEW Component Marking BOTTOM VIEW W Ultra Low ESR Device M+ Polarity Indicator 476 35K 510 Picofarad Code Rated Voltage H K F
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120Hz
100kHz
T510X157
X/7343-43
E/7260-38
180mm
330mm
476 capacitor 10 k
476 35k
476 35k T510 Series KEMET Ultra-Low Tantalum Chip Capacitor
Kemet
kemet c chip
T510
EIA 7260-38
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VSO05561
Abstract: Transistor BFR 30
Text: BFR 93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW
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VSO05561
OT-323
900MHz
Oct-13-1999
VSO05561
Transistor BFR 30
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BFR93a
Abstract: No abstract text available
Text: BFR93A NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B
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BFR93A
VPS05161
BFR93a
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R2S sot23
Abstract: No abstract text available
Text: BFR93A NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B
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BFR93A
VPS05161
R2S sot23
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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PDF
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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marking 93A
Abstract: No abstract text available
Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type
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OCR Scan
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PDF
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Q62702-F1144
OT-143
900MHz
marking 93A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1489
OT-323
Q122QS3
900MHz
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DB1-822
Abstract: BF1012
Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627
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OCR Scan
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PDF
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BF1012S
1012S
Q62702-F1627
OT-143
800MHz
1012S
DB1-822
BF1012
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