A8A Transistor
Abstract: SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23
Text: MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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MMUN2211LT1
OT-23
COLT-23
OT-23
A8A Transistor
SOT-23 marking a8x
transistor A8J
SOT-23 A8A
A8A Transistor sot23
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Untitled
Abstract: No abstract text available
Text: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800RF
ADC12D1800RF
12-Bit,
SNAS518H
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Untitled
Abstract: No abstract text available
Text: ADC12D1800 ADC12D1800 12-Bit, Single 3.6 GSPS Ultra High-Speed ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800
ADC12D1800
12-Bit,
SNAS500O
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Untitled
Abstract: No abstract text available
Text: ADC12D1800 ADC12D1800 12-Bit, Single 3.6 GSPS Ultra High-Speed ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800
ADC12D1800
12-Bit,
SNAS500N
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Untitled
Abstract: No abstract text available
Text: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800RF
ADC12D1800RF
12-Bit,
SNAS518I
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PDF
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Untitled
Abstract: No abstract text available
Text: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800RF
ADC12D1800RF
12-Bit,
SNAS518I
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LVC1G97
Abstract: No abstract text available
Text: SN74LVC1G97 CONFIGURABLE MULTIPLE-FUNCTION GATE SCES416C – DECEMBER 2002 – REVISED APRIL 2003 D D D D D D D D D D DBV OR DCK PACKAGE TOP VIEW Available in the Texas Instruments NanoStar and NanoFree Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V
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SN74LVC1G97
SCES416C
24-mA
000-V
A114-A)
A115-A)
SN74LVC1G97,
SN74LVC1G97YZPR
LVC1G97
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Untitled
Abstract: No abstract text available
Text: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800RF
ADC12D1800RF
12-Bit,
SNAS518H
SNAS518H
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SNAS500N
Abstract: No abstract text available
Text: ADC12D1800 ADC12D1800 12-Bit, Single 3.6 GSPS Ultra High-Speed ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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ADC12D1800
ADC12D1800
12-Bit,
SNAS500N
SNAS500N
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57B5
Abstract: 57b9 marking 57b5 j2472 1340 ax 716
Text: LM57 Resistor-Programmable Temperature Switch and Analog Temperature Sensor General Description Applications The LM57 is a precision, dual-output, temperature switch with integrated analog temperature sensor. The trip temperature TTRIP is programmable by using two external 1% resistors.
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57b9
Abstract: marking 57b5 57b5 ADC 1117 105k 450v capacitor
Text: LM57 Resistor-Programmable Temperature Switch and Analog Temperature Sensor General Description Applications The LM57 is a precision, dual-output, temperature switch with integrated analog temperature sensor. The trip temperature TTRIP is programmable by using two external 1% resistors.
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57b9
Abstract: 57B5 617 925 NEC 2705 L 548 NEC 2705 L 107 1340 ax 716 marking 57b5 SDA08B 57C5 nec 2561 equivalent
Text: LM57 Resistor-Programmable Temperature Switch and Analog Temperature Sensor General Description Applications The LM57 is a precision, dual-output, temperature switch with integrated analog temperature sensor. The trip temperature TTRIP is programmable by using two external 1% resistors.
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Untitled
Abstract: No abstract text available
Text: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)
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OCR Scan
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Q62702-C1485
Q62702-S534
OT-23
flS35bG5
535L0S
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Untitled
Abstract: No abstract text available
Text: ADVANCE SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE, CENTER POWER AND GROUND PINS FEATURES • High speed: 1 2 ,1 5 , 20 and 25ns • Multiple center pow er and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • A utom atic CE power down
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OCR Scan
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MT5C128K8A1
128Kx
32-Pin
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Untitled
Abstract: No abstract text available
Text: MT5C1009 S R A M 1 2 8 K x 8 S R A M WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 2 0 ,2 5 ,3 5 ,4 5 ,5 5 and 70ns Automatic Chip Enable power down All inputs and outputs are TTL compatible High-performance, low-power CMOS double-metal
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MT5C1009
32-Pin
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Untitled
Abstract: No abstract text available
Text: MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single pow er supply: +5V ±10% • Low power, 3mW standby; 200mW active, typical (A l
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200mW
048-cycle
096-cycle
24/28-Pin
A11/NC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T4C4M 4A1/B1 4 M EG X 4 DRAM v iic n o N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low pow'er, 3mW standby; 325mW active, typical (A l
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OCR Scan
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325mW
048-cycle
096-cycle
24-Pin
A0-A11
S1993,
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D blllSM'i ODD7bflS 522 • MRN PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM I^ IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, tim ing, functions and packages • High-performance CM OS silicon-gate process • Single power supply : +5V ±10%
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
A0-A11;
0007bT4
A0-A11
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division ANALOG R C 6704 Triple Fixed G ain V id e o A m plifier with Separate Enable Inputs Features Applications • Triple video amplifier w ith internal resistors to set gains to +2, +1, and -1 • Independently enabled amplifiers
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OCR Scan
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150C1)
16-pin
RC6704
RC6704
RC6704M
7ST73bD
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Untitled
Abstract: No abstract text available
Text: I^ICRQN 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 20 an d 25n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly _
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MT5C6408
28-Pin
MT5C6406
MT5C64OT
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T4C4001JDJ-6
Abstract: T4C4001
Text: DRAM 1 MEG X 4 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are fully TTL compatible
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T4C4001J
024-cycle
128ms
225mW
20-Pin
MT4C4001JL
T4C4001JDJ-6
T4C4001
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC L7E » • 000^340 IOS ■ MT5C6408 8K X 8 SRAM l^ iic n o N SRAM 8K X 8 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE
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MT5C6408
28-Pin
b11154T
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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MT4C16260/1
500mW
024-cycle
MT4C16261
40-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3mW standby; 325mW active, typical Al
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OCR Scan
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
A0-A11;
A0-A11
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