K2 SOT23-3
Abstract: sot23 marking zs BFR35AP BFR35A
Text: BFR35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking
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Original
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BFR35AP
VPS05161
Aug-01-2001
K2 SOT23-3
sot23 marking zs
BFR35AP
BFR35A
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PDF
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Untitled
Abstract: No abstract text available
Text: BFR35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking
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Original
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BFR35AP
VPS05161
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PDF
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Untitled
Abstract: No abstract text available
Text: BFR35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking
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Original
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BFR35AP
VPS05161
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PDF
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BCW66
Abstract: BFR35AP MARKING CODE 21E SOT23
Text: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking GEs Pin Configuration
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BFR35AP
15may
BCW66
BFR35AP
MARKING CODE 21E SOT23
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marking code f 25 x
Abstract: marking code R1 sot23
Text: CMPLC1V5 CMPLC1V5D SURFACE MOUNT LOW CAPACITANCE SILICON ESD TRANSIENT DATA LINE PROTECTOR SOT-23 CASE MARKING CODES: CMPLC1V5 SINGLE : CLV5 CMPLC1V5D (DUAL): CV5D MAXIMUM RATINGS: (TA=25°C) Reverse Stand-off Voltage Peak Pulse Power (8 x 20µs Waveform)
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Original
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OT-23
27-January
marking code f 25 x
marking code R1 sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking
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Original
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VPS05161
OT-23
900MHz
Nov-30-2000
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PDF
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80846
Abstract: 022241 gummel
Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143
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Original
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OT-143
Q62702-F1611
900MHz
Dec-11-1996
80846
022241
gummel
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PDF
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Untitled
Abstract: No abstract text available
Text: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP
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Original
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VPS05161
OT-23
Oct-13-1999
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PDF
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Untitled
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs
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BFS17P
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Untitled
Abstract: No abstract text available
Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs
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BFS17W
OT323
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PDF
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Untitled
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs
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BFS17P
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F804
Abstract: Q62702-F804
Text: PNP Silicon RF Transistor ● For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. ● Complementary type: BFQ 71 NPN . BFQ 76 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel)
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Q62702-F804
F804
Q62702-F804
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RF AMPLIFIER marking S1
Abstract: No abstract text available
Text: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900
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Original
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MRFIC0970/D
MRFIC0970
QFN-20)
MRFIC0970
QFN-20
GSM900
QFN-20
RF AMPLIFIER marking S1
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PDF
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SMD MARKING CODE 901
Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
GSO05553
SMD MARKING CODE 901
CFY 19
CFY 10
GaAs FET cfy 14
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PDF
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GMA marking
Abstract: IC 2272
Text: BFP 182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R
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Original
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OT-143R
900MHz
Oct-12-1999
GMA marking
IC 2272
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PDF
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BFT92
Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
Text: BFT92 PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration
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Original
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BFT92
VPS05161
900MHz
Jul-16-2001
BFT92
30227
infineon marking W1s
marking W1S sot23
transistor Bft92
infineon marking W1s SOT23
W1S SOT23
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PDF
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GaAs FET cfy 19
Abstract: S11 SIEMENS z0 607 MA 7a
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20
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OCR Scan
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V5005553
Q62702-F1393
Q62702-F1394
GaAs FET cfy 19
S11 SIEMENS
z0 607 MA 7a
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PDF
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bft97
Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
Text: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OCR Scan
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BFT97
BFT97
Q62702-F514
fl235bGS
D0b74SS
fl23Sb05
00b745b
transistor BFT 97
BFT 97
marking t54
20mAVCE
transistor marking zs
Transistor BFT 10
MARKING CODE t54
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PDF
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Transistor BFR 97
Abstract: bfr 49 transistor BFR34A
Text: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1
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OCR Scan
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Q62702-F346-S1
A23Sb05
D0b7270
Transistor BFR 97
bfr 49 transistor
BFR34A
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PDF
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sot-23 MARKING CODE ZA
Abstract: BFQ29P
Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OCR Scan
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BFQ29P
62702-F
sot-23 MARKING CODE ZA
BFQ29P
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OCR Scan
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Q62702-F456
00b743fi
623SbD5
BFT66
flE35bOS
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PDF
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bft92
Abstract: DB642
Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel)
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OCR Scan
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BFT92
OT-23
bft92
DB642
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PDF
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BFR90
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration
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OCR Scan
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Q62702-F560
flB35b05
BFR90
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PDF
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CFY75
Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-F1368
Q62702-F1369
235b05
DDL75MG
CFY75
EHT08184
fl235b05
0QL7S41
CFY75
cfy 75
cfy 14 siemens
HEMT marking P
FMI 591
cfy siemens
CFY 19
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PDF
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