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    MARKING 3C7 Search Results

    MARKING 3C7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 3C7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Part marking

    Abstract: No abstract text available
    Text: Surface Mount Rectifier Markings Cathode Band Device Marking not included on bidirectional TVS F1 V123 Rectron Logo (only on SMC) Factory Date Code Factory Date Code "XYZZ": "X" = Factory code, "Y" = Last digit of year,From 2010, the code should be 2010 : A/ 2011 : B/ 2012 : C., "ZZ" = MFG week


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    FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 FFM101 HFM101 Part marking PDF

    Untitled

    Abstract: No abstract text available
    Text: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    EN29PL064 PDF

    cFeon

    Abstract: EN29PL064 3FE00 cFeon EN SA10 SA11 SA12 SA13 SA14 sa15-s
    Text: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    EN29PL064 EN29PL032 cFeon EN29PL064 3FE00 cFeon EN SA10 SA11 SA12 SA13 SA14 sa15-s PDF

    Untitled

    Abstract: No abstract text available
    Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    EN29LV640T/B 00B5h 00C5h PDF

    cFeon EN

    Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
    Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    EN29LV640T/B cFeon EN cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555 PDF

    Untitled

    Abstract: No abstract text available
    Text: EN29PL064/032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    EN29PL064/032 PL064 PL032 48-Ball 56-Ball PDF

    cFeon

    Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
    Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    EN29LV640T/B cFeon cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA PDF

    Untitled

    Abstract: No abstract text available
    Text: i H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E ITEM CODE ECWHA3C4720 H 3C5120 H 3C5620 H 3C6220 / 1 3C6820 H 3C7520 1 3C8220 H 3C9120 f I 3C1 03 0 H 3C113 0 1 3C1230 f I 3C1330 H 3C1530 H 3C1630 J f 3C1830 H 3C2030 H 3C2230 1 3C2430 H 3C2730 f


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    ECWHA3C4720 3C5120 3C5620 3C6220 3C6820 3C7520 3C8220 3C9120 3C113 3C1230 PDF

    l86a

    Abstract: A76A l46c 93XX56 93C86C sot 86 marking CODE e3 c76a A86A 93AA86C 93c66b
    Text: 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire Compatible Serial EEPROMs Features: Description: • Densities from 1 Kbits through 16 Kbits


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    93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, l86a A76A l46c 93XX56 93C86C sot 86 marking CODE e3 c76a A86A 93AA86C 93c66b PDF

    93XX66B

    Abstract: 93C46x l46c sot 86 marking CODE e3 93C86C 93AA86B 93AA86C
    Text: 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire Compatible Serial EEPROMs Features: Description: • Densities from 1 Kbits through 16 Kbits


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    93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93XX66B 93C46x l46c sot 86 marking CODE e3 93C86C 93AA86B 93AA86C PDF

    93lc46b1

    Abstract: 93cxx C46B DS21929 A56A A86C L46B 93AA86A A-56-B 93AA86B
    Text: 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire Compatible Serial EEPROMs Features: Description: • Densities from 1 Kbits through 16 Kbits


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    93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93lc46b1 93cxx C46B DS21929 A56A A86C L46B 93AA86A A-56-B 93AA86B PDF

    Untitled

    Abstract: No abstract text available
    Text: i H I R DA N G L EP R O J E C T I O NI ALTERATION I S S U E ITEM CODE ECWHA3Cl02 B 1 3C112 ( )B H 3C1220B 1 3C132()B 1 3C1520B f I 3C1620B f I 3C1820B f I 3C2020B 1 3C222 0 B H 3C2420B H 3C272 ( )B H 3C3020B 1 3C332 0 B H 3C362 0 B 1 1 3C392 0 B H 3C4320B


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    ECWHA3Cl02 3C1220B 3C132( 3C1520B 3C1620B 3C1820B 3C2020B 3C222 3C2420B 3C272 PDF

    Untitled

    Abstract: No abstract text available
    Text: T H I R DA N G L EP R O J E C T I O N ~TEM ALTERATION I S S U E lf p i DIMENSIONS V OL U ME ( m m ' ) TlH d F .0 O ECWHA3C472 ( ) C) 0.0047 (472)17.8 6 .4 9 . 1 15 .6 830 日 1 H H 6 .6 9 .4 3C5120C 0.0051 (512) 887 H 1 1 1 1 3C562 ( ) C 0.0056 (562) 6 . 8 9町 6


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    ECWHA3C472 3C5120C 3C562 3C622 3C682 3C7520C 3C822 3C9120C 3C1030C 10VC10 PDF

    93lc46b1

    Abstract: marking A5 sot-23 MARKING 3B1 SOT-23 3L7* MARKING 93Cxx MICROCHIP marking C.S l76a Marking A2 Microchip MARKING 93AA46B
    Text: 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire 互換シリアル EEPROM 特長: 概要: • 1K ビットから 16K ビットの容量


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    93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93lc46b1 marking A5 sot-23 MARKING 3B1 SOT-23 3L7* MARKING 93Cxx MICROCHIP marking C.S l76a Marking A2 Microchip MARKING 93AA46B PDF

    CZRB3009-G

    Abstract: CZRB3005-G 3b3 smd zener diode 330 marking diode 3A1 zener diode smd 3F7 marking code 3B6 ,zener DIODE smd color marking Zener diode smd marking code 63 3F6 smd
    Text: Comchip SMD Zener Diode SMD Diode Specialist CZRB3005-G Thru CZRB3200-G Voltage: 6.2 to 200 Volts Power: 3 Watts RoHS Device Features DO-214AA SMB -Glass passivated chip -Low leakage 0.191 (4.85) 0.171 (4.35) -Built-in strain telief -Low inductance -High peak reverse power dissipation


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    CZRB3005-G CZRB3200-G DO-214AA DO-214AA MIL-STD-750, QW-BZ022 CZRB3009-G 3b3 smd zener diode 330 marking diode 3A1 zener diode smd 3F7 marking code 3B6 ,zener DIODE smd color marking Zener diode smd marking code 63 3F6 smd PDF

    Untitled

    Abstract: No abstract text available
    Text: T H I R DA N G l EP R O J E C T I O NI ALTERATION I S S U E ITEM CODE ECWHA3C102 0 4 " 3C11204 " 3C12204 H 3C13204 " 3C15204 " 3C16204 H 3C18204 H 3C20204 3C222 0 4 H 3C242 4 3C27204 H 3C302()4 )4 " 3C332 ( )4 " 3C362 ( 3C39204 )4 " 3C432 ( 3C47204 3C512()4


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    ECWHA3C102 3C11204 3C12204 3C13204 3C15204 3C16204 3C18204 3C20204 3C222 3C242( PDF

    MARKING 3C7

    Abstract: CMLDM3757
    Text: CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


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    CMLDM3757 OT-563 350mW 500mA 200mA 540mA, 215mA, MARKING 3C7 CMLDM3757 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


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    CMLDM3757 OT-563 350mW 500mA 200mA 540mA, 215mA, PDF

    MARKING 3C7

    Abstract: CMLDM3757 TH430 CMLDM375
    Text: CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


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    CMLDM3757 OT-563 350mW 200mA 500mA 540mA, MARKING 3C7 CMLDM3757 TH430 CMLDM375 PDF

    N-Channel and P-Channel

    Abstract: No abstract text available
    Text: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for


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    CMLDM3757 OT-563 350mW N-Channel and P-Channel PDF

    CMLDM3757

    Abstract: No abstract text available
    Text: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed


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    CMLDM3757 OT-563 350mW 28-January CMLDM3757 PDF

    3C725L

    Abstract: JESD22-A115
    Text: LF PA K PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


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    PSMN3R7-25YLC 3C725L JESD22-A115 PDF

    3C730L

    Abstract: JESD22-A115 psmn3r7-30ylc
    Text: LF PA K PSMN3R7-30YLC N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


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    PSMN3R7-30YLC 3C730L JESD22-A115 psmn3r7-30ylc PDF

    A14 marking sot23-5

    Abstract: No abstract text available
    Text: 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 8K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin Word Size Temp Ranges Packages 93AA76A 1.8-5.5 No 8-bit I OT 93AA76B 1.8-5-5 No 16-bit I OT 93LC76A 2.5-5.5 No 8-bit I, E OT 93LC76B


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    93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA76A 93AA76B 93LC76A 93LC76B 93C76A 93C76B 93AA76C A14 marking sot23-5 PDF