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    MARKING 3G PNP Search Results

    MARKING 3G PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING 3G PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc857b

    Abstract: BC857C BC857C sot23
    Text: BC857B BC857C SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857B 3F BC857C 3G SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE NPN COMPLEMENTARY TYPES ARE


    Original     		BC857B BC857C BC858B BC858C OT-23 BC857C BC857C sot23 PDF

    BC856BW

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original     		BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W BC856BW PDF

    BC857BT

    Abstract: No abstract text available
    Text: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)


    Original     		BC857AT/BT/CT OT-523 OT-523 BC857AT BC857BT BC857CT 857CT -10mA, -100mA, PDF

    3D smd marking

    Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original     		BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W 3D smd marking SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW PDF

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858 PDF

    Marking Stempelung Diode

    Abstract: BC846 BC850 BC856 BC856A BC857 BC858 BC859 BC860
    Text: BC856 . BC860 BC856 . BC860 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2008-04-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		BC856 BC860 OT-23 O-236) UL94V-0 BC857 Marking Stempelung Diode BC846 BC850 BC856 BC856A BC857 BC858 BC859 BC860 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856 . BC860 BC856 . BC860 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2011-11-07 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		BC856 BC860 BC860 OT-23 O-236) UL94V-0 BC856 BC857 PDF

    marking 3G pnp

    Abstract: No abstract text available
    Text: BC856 . BC860 BC856 . BC860 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2011-07-11 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		BC856 BC860 OT-23 O-236) UL94V-0 BC857 marking 3G pnp PDF

    BC857

    Abstract: transistor marking code 3f series surface mount transistor marking code sot BC856 BC857B 3F MARKING CODE 3J BC857C 3g marking code transistor marking codes
    Text: Central BC856 SERIES BC857 SERIES BC858 SERIES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching


    Original     		BC856 BC857 BC858 BC856, OT-23 BC856B BC857B BC858B transistor marking code 3f series surface mount transistor marking code sot BC857B 3F MARKING CODE 3J BC857C 3g marking code transistor marking codes PDF

    Untitled

    Abstract: No abstract text available
    Text: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy


    Original     		BC856 BC857 BC858 BC856, BC857 OT-23 BC856B BC857B BC858B PDF

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1S-6/7 BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23 PDF

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856 PDF

    marking code r2

    Abstract: BC856 BC857 BC858 transistor NF marking code BC856B BC856A BC857A BC857B BC857C
    Text: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy


    Original     		BC856 BC857 BC858 BC856, BC857 OT-23 IEB125 BC856B BC857B marking code r2 transistor NF marking code BC856B BC856A BC857A BC857B BC857C PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G PDF

    SMD TRANSISTOR MARKING 3B

    Abstract: 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR
    Text: Transistors SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion


    Original     		KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 SMD TRANSISTOR MARKING 3B 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR PDF

    3F smd transistor

    Abstract: 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E
    Text: Transistors IC SMD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage


    Original     		BC856W BC857W BC858W BC856W BC857W BC856AW BC856BW BC857AW 3F smd transistor 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E PDF

    smd transistor 3d

    Abstract: 3F smd transistor 3D smd marking smd transistor marking 3d smd transistor 3g smd transistor 3F smd transistor BC857 BC857 smd transistor smd 3E SMD TRANSISTOR MARKING 3B
    Text: Transistors IC SMD Type PNP General Purpose Transistor BC856,BC857,BC858 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 65 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BC856 BC857 BC858 OT-23 BC856 BC857 BC856A BC856B smd transistor 3d 3F smd transistor 3D smd marking smd transistor marking 3d smd transistor 3g smd transistor 3F smd transistor BC857 BC857 smd transistor smd 3E SMD TRANSISTOR MARKING 3B PDF

    LBC856ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • LBC857CLT1G S-LBC857CLT1G Series ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC856ALT1G PDF

    LBC858CLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.


    Original     		AEC-Q101 LBC857CLT1G S-LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC858CLT1G PDF

    SMD 3E

    Abstract: BC857T SMD Transistors 3f
    Text: Transistors SMD Type PNP General Purpose Transistors KC857T BC857T SOT-523 Unit: mm +0.1 1.6-0.1 Features +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 Low voltage (max. 45 V). +0.01 0.1-0.01 0.55 Low current (max. 100 mA) 0.35 3 +0.25 0.3-0.05


    Original     		KC857T BC857T) OT-523 KC857CT KC857AT KC857BT SMD 3E BC857T SMD Transistors 3f PDF

    LBC858ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC858ALT1G PDF

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_


    OCR Scan     		BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B PDF

    BC857

    Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C


    OCR Scan     		BC856/7/8 BC846/847/848. BC856 BC857 BC858 BC857 BC857 KEC MARKING KEG SOT-23 BC856B BC856A BC857A BC857B BC857C BC858 PDF

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC857 kec
    Text: SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT BC856 -80 Collector-Base


    OCR Scan     		BC856/7/8 BC846/847/848. BC856 BC857 BC858 BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC857 kec PDF