MMHZ5270BPT
Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)
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OT-23
MMHZ5270BPT
GP 52b DIODE
marking 24b sot-23
MMHZ5232
MMSZ5247SPT
MMPZ5232BPT
zener diode in 5229 b
MMPZ5250BPT
MMPZ5221BPT
MMPZ5235BPT
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45SM15A
Abstract: 45SM20A 45SM7A
Text: SURFACE MOUNT FILTER QSMF - 1000 SERIES Hy-Q International 4.5 ±0.2 1.0 ±0.2 7.5 ±0.2 1.0 ±0.2 TYP. 4.1 ±0.2 GND IN GND IN 5.0 ±0.2 MARKING 2.5 ±0.2 2.5 ±0.2 OUT 1.4 ±0.2 TYP. GND METAL OUT GND 2.2 ±0.2 TYP. CERAMIC SUGGESTED PAD LAYOUT TOP VIEW
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21SM7A
21SM7B
21SM15A
21SM15B
21SM20A
21SM20B
21SM30A
21SM30B
45SM7A
45SM15A
45SM15A
45SM20A
45SM7A
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21SH15A
Abstract: 21SH15B 21SH20A 21SH20B 21SH30A 21SH30B 21SH7A 21SH7B 45SH15A 45SH20A
Text: SURFACE MOUNT FILTER QSMF - 2000 SERIES Hy-Q International 7.0 1.0 MARKING 6.0 4.6 2.54 5.0 2.54 4.0 1.4 Metal 1.0 Ceramic 2.0 SUGGESTED PAD LAYOUT TOP VIEW 1.5 TYP. 17.5 2.0 TYP. 2.0 2.0 INFRARED RAYS REFLOW 1.75 4.0 TYP. 1.7 200 Sec (˚C) Ø21 120.0˚
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21SH7A
21SH7B
21SH15A
21SH15B
21SH20A
21SH20B
21SH30A
21SH30B
45SH7A
45SH15A
21SH15A
21SH15B
21SH20A
21SH20B
21SH30A
21SH30B
21SH7A
21SH7B
45SH15A
45SH20A
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MARKING 910
Abstract: 21SU15A 21SU15B 21SU20A 21SU20B 21SU30A 21SU30B 21SU7A 21SU7B 45SU15A
Text: SURFACE MOUNT FILTER QSMF - 3000 SERIES Hy-Q International 1.95 6.0 2.4 1.0 1.4 Marking 3.5 1.5 Metal Ceramic 3.0 SUGGESTED PAD LAYOUT TOP VIEW 1.5 TYP. 13.5 2.0 TYP. 1.1 2.0 2.0 INFRARED RAYS REFLOW 1.75 4.0 TYP. 1.3 200 Sec (˚C) Ø21 120.0˚ 12.0 200
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21SU7A
21SU7B
21SU15A
21SU15B
21SU20A
21SU20B
21SU30A
21SU30B
45SU7A
45SU15A
MARKING 910
21SU15A
21SU15B
21SU20A
21SU20B
21SU30A
21SU30B
21SU7A
21SU7B
45SU15A
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pt 4515
Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7
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SMC - SY5120
Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based
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SY9000
SY3000
SY5000
SY7000
SMC - SY5120
SMC SY313
omron G71-OD16
SY7120
G71-OD16
SY340
431a1
diode sy
GVVZS3000-21A-2
19n marking 2 pin diode
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MOS marking 8103
Abstract: TPCA8103
Text: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.)
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TPCA8103
MOS marking 8103
TPCA8103
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MOS marking 8103
Abstract: No abstract text available
Text: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.)
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TPCA8103
MOS marking 8103
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TPCA8103
Abstract: No abstract text available
Text: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) • High forward transfer admittance: |Yfs| =45S (typ.)
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TPCA8103
TPCA8103
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tpca8103
Abstract: MOS marking 8103
Text: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.)
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TPCA8103
tpca8103
MOS marking 8103
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DIN 6784
Abstract: BAS140W 47S MARKING
Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W ! , BAS40-06 BAS40-06W !
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BAS40.
/BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
DIN 6784
47S MARKING
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45s MARKING CODE
Abstract: bas16 sot143
Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W ! , BAS40-06 BAS40-06W !
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BAS40.
/BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
45s MARKING CODE
bas16 sot143
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BAS140W
Abstract: BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W
Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS140W BAS40-02L
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BAS40.
/BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS140W
BAS40
BAS40-02L
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
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sot323 transistor marking 44s
Abstract: transistor marking 47s BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07 BAS140W BAS40
Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3
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BAS40.
/BAS140W
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
sot323 transistor marking 44s
transistor marking 47s
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS40-07
BAS140W
BAS40
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resistors sqp
Abstract: 1 watt SMD resistors derating IEC62
Text: High Voltage Thick Film Resistors Welwyn Components VRW Series • VRW37 meets the requirements of BS / EN / IEC 60065 • High working voltage to 3.5kV in compact size • High ohmic range to 30M • High pulse load capability • Robust flameproof coating material
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VRW37
VRW25
VRW25
IEC62
5000/box
resistors sqp
1 watt SMD resistors derating
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Untitled
Abstract: No abstract text available
Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L
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BAS40.
/BAS140W
Q1011)
BAS140W
BAS40-02L
BAS40
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel
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OCR Scan
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0-04W
0-05W
0-06W
2702-A
OT-323
EHD07168
EHD07169
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Untitled
Abstract: No abstract text available
Text: R&E 4555B 4556B INTERNATIONAL, INC. CMOS DUAL 2-T0-4 LINE DECODERS FEATURES ♦ Buffered Outputs ♦ Selected Output Active High 4555B or Active Low (45S6B) Expandable ♦ CONNECTION D IA G R A M (all packages) Vd d I 16 DESCRIPTION The 4555 B and 4556B are constructed
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4555B
4556B
4555B)
45S6B)
4556B
4555B
1-of-16)
455low
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CF300
Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
Text: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
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50B4DIN41867
569-GS
CF300
CF-300
telefunken mosfet
marking code g1s
transistor bf 222
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Transistor 4515
Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Text: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
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029426A
50B4DIN41867
569-GS
000s154
hal66
Transistor 4515
CF300
transistor D 4515
lm 4580
Telefunken u 237
sot-23 MARKING CODE ZA
SY 180/4
TRANSISTOR BC 414
W-25
CF-300
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an 17820 equivalent
Abstract: lot date code panasonic marking g3n ELB1A002
Text: S Ë fîS S fS -t T 1LC -05003 Issu e NO. S fi B Date Of Issue : % fî K 2005^2^240 F e b r u a r y 2 4 ,2 0 0 5 3?Si % New Classification: □ Change Q To Digj-Kev «j A f± PRODUCT SPECIFICATION FOR INFORMATION m nD n « w Product D escription m s op m Product P art N um ber
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T1LC-05003
ELB1A002
151-LC1A002
an 17820 equivalent
lot date code panasonic
marking g3n
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ELB2A001
Abstract: ELB2A5 lot code panasonic
Text: « fir B 2 0 0 5 ^ 2 ^ 2 4 0 Date O f Is su e : F eb ru ary 24,2005 m ft e % mm. C la s s ific a tio n : New n sen mm I—I Change L-l To Digi-Kev « a ft m m PRODUCT SPECIFICATION FOR INFORMATION m o°p £ ^ Product D escrip tion ; High Frequency Filter
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OCR Scan
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TILC-0501I
ELB2A501
T571-8umn)
151-LC2A005
ELB2A001
ELB2A5
lot code panasonic
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marking g3N
Abstract: No abstract text available
Text: m m l # f Is s u e NO. * fr T 1LC- 0 5 0 0 2 : □ 2005^2^240 Date o f Issu e : F e b ru a ry 2 4 ,2 0 0 5 % ft K % m mm n C lassificatio n : T o Mew r-. I Change LJ D ig h K e v m À t t i PRODUCT SPECIFICATION FOR INFORMATION s s s ft Product D escrip tion
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OCR Scan
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PDF
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TILC-05002
151-LC1A002
marking g3N
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