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    MARKING 603 NPN TRANSISTOR Search Results

    MARKING 603 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 603 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC114EM3T5G Series Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


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    DTC114EM3T5G OT-723 PDF

    MHDR1X2

    Abstract: CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer
    Text: SiP11206DB Vishay Siliconix 200 W 1/16th Brick IBC Demo Board using SiP11206 DESCRIPTION SiP11206 is a half-bridge controller for intermediate bus converters. While SiP11206 allows for overall better efficiency through out the input voltage range, since its duty


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    SiP11206DB 1/16th SiP11206 BAS16 MMUN2213LT1G S09-0324-Rev. MHDR1X2 CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


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    NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516 PDF

    Untitled

    Abstract: No abstract text available
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A PDF

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA PDF

    transistor smd marking KA

    Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL PDF

    transistor smd marking KA

    Abstract: No abstract text available
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA PDF

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA MARKING CODE SMD IC FR MARKING SMD TRANSISTOR marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE A1 2SC5700 2SC5849
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA MARKING CODE SMD IC FR MARKING SMD TRANSISTOR marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE A1 2SC5700 2SC5849 PDF

    Untitled

    Abstract: No abstract text available
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


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    HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A PDF

    702 TRANSISTOR smd

    Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


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    HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 TRANSISTOR smd transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC PDF

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 smd transistor FR MARKING SMD TRANSISTOR TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 transistor smd marking KA smd marking 702 2SC5700 2SC5757
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 702 smd transistor FR MARKING SMD TRANSISTOR TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 transistor smd marking KA smd marking 702 2SC5700 2SC5757 PDF

    702 Z TRANSISTOR smd

    Abstract: 702 Z smd TRANSISTOR 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA 2sc5872 FR MARKING SMD TRANSISTOR 702 H transistor smd MARKING SMD IC CODE TRANSISTOR SMD MARKING CODE A1
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


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    HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA 2sc5872 FR MARKING SMD TRANSISTOR 702 H transistor smd MARKING SMD IC CODE TRANSISTOR SMD MARKING CODE A1 PDF

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607 PDF

    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


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    NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582 PDF

    603 transistor npn

    Abstract: marking 603 npn transistor DTD114TK
    Text: DTD114TK Digital transistor, NPN, with 1 resistor Features • available in an SMT3 SMT, SC-59 package • package marking: DTD114TK; F04 • a built-in bias resistor allows inverter circuit configuration without external input resistors • bias resistor consists of a thin-film


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    DTD114TK SC-59) DTD114TK; DTD114TK 603 transistor npn marking 603 npn transistor PDF

    CXT3904

    Abstract: CXT3906 marking code 809 e05 marking
    Text: Central CXT3904 NPN CXT3906 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CXT3904, CXT3906 types are complementary silicon tran­ sistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­


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    CXT3904 CXT3906 CXT3904, OT-89 OT-89 14-November marking code 809 e05 marking PDF

    marking 1A

    Abstract: TMPT918 pt2222a
    Text: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0


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    BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A BCW65B BCW66F marking 1A TMPT918 pt2222a PDF

    5089

    Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
    Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier


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    2N5088/5089 MMBT5088/5089 MMBT5088 MMBT5089 O-92/SOT-23, MIL-STD-202, OT-23 MMBT5089 5089 N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 PDF

    BCW71 AG

    Abstract: No abstract text available
    Text: AL L E GRO MI C ROS Y S T E MS 8514019 I NC SPRAGU E. TB » • 0SD433A G0D3bG5 SEM ICONDS / IC S 2 ■ ALGR 93D 03605J ' SMALL-OUTLINE BIPOLAR TRANSISTORS_ NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain


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    0SD433A 03605J) BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A BCW71 AG PDF

    marking code 604 SOT23

    Abstract: marking 603 npn transistor
    Text: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kii JZ L nr Pin Configuration h Package O 1 =B CO Q62702-C2255 h WKs m Marking Ordering Code BCR 119 ro Type nr


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    Q62702-C2255 OT-23 40fnm 300ns; marking code 604 SOT23 marking 603 npn transistor PDF

    BCW71 AG

    Abstract: No abstract text available
    Text: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A


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    flS13 G003L BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A BCW71 AG PDF

    BFT93

    Abstract: BFT93A BFR93 marking 31A sot BFR93A sot-23 Transistor MARKING CODE ZG ZG SOT-23 sot37 5v marking code 604 SOT23
    Text: N AMER PHILIPS/DISCRETE ESE D m L bb53^31 G01fil73 0 • ' BFT93 T-3I-/7 P-N-P 1 GHz WIDEBAND TRANSISTOR P*N-P transistor in a plastic SOT-23 envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,


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    BFT93 OT-23 BFR93 BFR93A. BFT93 BFT93A marking 31A sot BFR93A sot-23 Transistor MARKING CODE ZG ZG SOT-23 sot37 5v marking code 604 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING


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    2SC5088 PDF

    2SC5088

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING


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    2SC5088 CH451 /-J250 2SC5088 PDF