MARKING 603AL TRANSISTOR Search Results

MARKING 603AL TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MARKING 603AL TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
603AL Abstract: marking 603AL transistor Text: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This	OCR Scan	FDD603AL 603AL, 603AL marking 603AL transistor	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

603AL

Abstract: marking 603AL transistor
Text: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This

OCR Scan

FDD603AL 603AL, 603AL marking 603AL transistor

PDF