et6000
Abstract: n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221
Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction
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MD9000
ET6000
4816P-003-221/221
4100T
4816P-003
5M/N6010
n6010
4816P-003-221/221
Tseng Labs
84321
resistance 220 ohm
4816P00
bourns res
LED DIODE
marking 221
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IC 7253
Abstract: 4800P 4814P-850-001 LTC1345
Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 14 PIN Used in conjunction with linear technology LTC1345 IC Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction Space and cost savings
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LTC1345
4814P-850-001
4100T
4800P
100ppm/
150ppm/
4814P-850
5M/N6010
IC 7253
4800P
4814P-850-001
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4422 mosfet
Abstract: 4422 datasheet DC/DC motor forward reverse control ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC
Text: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V : RDS(on)=0.025W; ID=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
12m3-7100
4422 mosfet
4422 datasheet
DC/DC motor forward reverse control
ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
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65N02
Abstract: ZXMD65N02N8
Text: ZXMD65N02N8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=20V; RDS(ON)=0.025V D=6.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD65N02N8
ZXMD65N02N8TA
65N02
ZXMD65N02N8
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6n03
Abstract: ZXM66N03N8 ZXM66N03N8TA
Text: ZXM66N03N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=30V; RDS(ON)=0.015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXM66N03N8
ZXM66N03N8TA
6n03
ZXM66N03N8
ZXM66N03N8TA
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6N02
Abstract: 41ar D9A marking
Text: ZXM66N02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=20V; RDS(ON)=0.015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXM66N02N8
ZXM66N02N8TA
6N02
41ar
D9A marking
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65P03
Abstract: ZXMD65P03N8 ZXMD65P03N8TA ZXMD65P03N8TC
Text: ZXMD65P03N8 DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-30V; RDS(ON)=0.055⍀ D=-4.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD65P03N8
ZXMD65P03N8TA
65P03
ZXMD65P03N8
ZXMD65P03N8TA
ZXMD65P03N8TC
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ZXM66P03N8
Abstract: ZXM66P03N8TA ZXM66P03N8TC
Text: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM66P03N8
ZXM66P03N8TA
ZXM66P03N8TC
ZXM66P03N8
ZXM66P03N8TA
ZXM66P03N8TC
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6P02
Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Text: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM66P02N8
ZXM66P02N8TA
ZXM66P02N8TC
INFORMATI64-7630
6P02
ZXM66P02N8
ZXM66P02N8TA
ZXM66P02N8TC
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Untitled
Abstract: No abstract text available
Text: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM66P03N8
ZXM66P03N8TC
DEVIC100
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ZXMD65P02N8TA
Abstract: ZXMD65P02N8 ZXMD65P02N8TC
Text: ZXMD65P02N8 DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.050⍀ D=-5.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD65P02N8
ZXMD65P02N8TA
ZXMD65P02N8TA
ZXMD65P02N8
ZXMD65P02N8TC
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6P02
Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Text: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM66P02N8
ZXM66P02N8TA
ZXM66P02N8TC
6P02
ZXM66P02N8
ZXM66P02N8TA
ZXM66P02N8TC
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d67a
Abstract: No abstract text available
Text: ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.025⍀ D=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN3A02X8
ZXMN3A02X8TA
ZXMN3A02X8TC
d67a
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ZXMN10A11GTA
Abstract: ZXMN10A11G ZXMN10A11GTC
Text: ZXMN10A11G DUAL 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.6⍀ D=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them
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ZXMN10A11G
OT223
ZXMN10A11GTA
ZXMN10A11GTA
ZXMN10A11G
ZXMN10A11GTC
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6n03
Abstract: ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC
Text: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-30V; RDS(ON)=0.025 D=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM66P03N8
ZXM66P03N8TA
ZXM66P03N8TC
6n03
ZXM66P03N8
ZXM66P03N8TA
ZXM66P03N8TC
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ZXMN3A06DN8
Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d
Text: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.035⍀ ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3A06DN8
ZXMN3A06DN8TA
ZXMN3A06DN8TC
12m22
ZXMN3A06DN8
ZXMN3A06DN8TA
ZXMN3A06DN8TC
51A SOIC
3a06d
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ZXM64N03X
Abstract: ZXM64N03XTA ZXM64N03XTC
Text: ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXM64N03X
ZXM64N03X
ZXM64N03XTA
ZXM64N03XTC
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diode 2a02
Abstract: No abstract text available
Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN2A02N8
ZXMN2A02N8TA
ZXMN2A02N8TC
diode 2a02
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Untitled
Abstract: No abstract text available
Text: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A25DN8
ZXMN6A25DN8TA
ZXMN6A25DN8TC
6A25D
PROVI01-04
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ZXMN3A02N8
Abstract: ZXMN3A02N8TA ZXMN3A02N8TC
Text: ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3A02N8
ZXMN3A02N8TA
ZXMN3A02N8TC
ZXMN3A02N8
ZXMN3A02N8TA
ZXMN3A02N8TC
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6A09
Abstract: ZXMN6A09G ZXMN6A09GTA ZXMN6A09GTC
Text: ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.045 ID= 5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A09G
OT223
ZXMN6A09GTA
ZXMN6A09GTC
6A09
ZXMN6A09G
ZXMN6A09GTA
ZXMN6A09GTC
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ZXMN3B04N8
Abstract: ZXMN3B04N8TA ZXMN3B04N8TC 3b04
Text: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
ZXMN3B04N8
ZXMN3B04N8TA
3b04
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TSENG LABS
Abstract: N6010
Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN • Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets ■ Com pliant leads for thermal expansion P O U R N S ■ Miniaturized circuitry and packaging fo r space reduction
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OCR Scan
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MD9000
ET6000
4816P-003-221/221
100ppm/
150ppm/
5M/N6010
TSENG LABS
N6010
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PDF
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Mn6010
Abstract: No abstract text available
Text: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 14 PIN POURNS • ■ ■ ■ Used in conjunction with linear technology LTC1345 IC Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction
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OCR Scan
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LTC1345
4814P-850-001
100ppm/
150ppm/
50VDC/or
48I4P-850
Mn6010
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