HALL Sensor TO92UA
Abstract: 525k hall sensor 525k
Text: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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6251-465-3DS
HAL525,
HAL535
HAL525
HALL Sensor TO92UA
525k
hall sensor 525k
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erds2t0
Abstract: ERD25 W1001
Text: Carbon Film Resistors Carbon Film Resistors Type: ERDS1 0.5 W ERDS2 (0.25 W) ERD25 (0.25 W) • Features ● ● ● ● ● Discontinued Reliability . Automatic insertion . Marking . Flame Retardant . Reference Standard .
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ERD25
ER131
erds2t0
ERD25
W1001
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M74VHC1GT125DF1G
Abstract: M74VHC1GT125DF2G M74VHC1GT125DT M74VHC1GT125
Text: MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 1 M The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed
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MC74VHC1GT125
MC74VHC1GT125/D
M74VHC1GT125DF1G
M74VHC1GT125DF2G
M74VHC1GT125DT
M74VHC1GT125
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SCRH124-101
Abstract: 3r9d H124 100KHZ
Text: SCRH124 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH124-3R9 SCRH124-4R7 SCRH124-6R8 SCRH124-8R2 SCRH124-100 SCRH124-120 SCRH124-150
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SCRH124
SCRH124-3R9
SCRH124-4R7
SCRH124-6R8
SCRH124-8R2
SCRH124-100
SCRH124-120
SCRH124-150
SCRH124-180
SCRH124-220
SCRH124-101
3r9d
H124
100KHZ
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elna re3
Abstract: RJ4 Elna 35222M re3 elna 35V222
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RE3 Standard Capacitors Series RE3 • Guaranteed 2000 hours at 85˚C. RJ4 High temperature RE3 Marking color : White print on a blue sleeve or White print on an indigo blue sleeve Specifications Item Performance
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120Hz)
16x25
16x31
16x35
18x31
elna re3
RJ4 Elna
35222M
re3 elna
35V222
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transistor SMD t04
Abstract: ipc-SM-782 smd T04 smd t04 68 transistor SMD t04 95 SMD RESISTOR 100 OHMS smd code t04 smd transistor marking t02 SMD Transistors t04 EIA MARKING CODE RULES
Text: Features • ■ ■ ■ Standard E.I.A. package compatible with automatic placement equipment Compliant leads to reduce solder joint fatiguing Tape and reel packaging standard see page 304 for dimensions ■ ■ Marking on contrasting background for permanent identification
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4400P
MIL-STD-202.
transistor SMD t04
ipc-SM-782
smd T04
smd t04 68
transistor SMD t04 95
SMD RESISTOR 100 OHMS
smd code t04
smd transistor marking t02
SMD Transistors t04
EIA MARKING CODE RULES
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4111AS
Abstract: vishay radial capacitors 7500 VDC KP1830 kp 1830 HQN-384-01
Text: KP 1830 Vishay Roederstein AC and Pulse Film Foil Capacitors KP Radial Potted Type FEATURES L max. W max. Marking H max. 0.5 5 mm lead pitch, supplied loose in box taped in ammopack or reel RoHS compliant ENCAPSULATION Plastic case, epoxy resin sealed, flame retardant
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
4111AS
vishay radial capacitors 7500 VDC
KP1830
kp 1830
HQN-384-01
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RF2045
Abstract: NE AND micro-X
Text: RF2045 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic GND 4 Features MARKING - C5 SI GN S DC to 6000MHz Operation Internally matched Input and Output 14dB Small Signal Gain +32dBm Output IP3
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RF2045
RF2045
RF204X
DS070403
NE AND micro-X
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NLVVHC1G
Abstract: No abstract text available
Text: MC74VHC1GT126 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A M The MC74VHC1GT126 is a single gate noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed
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MC74VHC1GT126
MC74VHC1GT126/D
NLVVHC1G
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c 337 25
Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Text: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338
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Q62702-C313
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
c 337 25
337 marking code
bc337
c 33740
337-40
338 marking code
bc 337 equivalent
bc 170 c
npn bc 337
NPN 337
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Untitled
Abstract: No abstract text available
Text: BCR198T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR198T WRs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR198T
VPS05996
EHA07183
Dec-13-2001
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D5001
Abstract: No abstract text available
Text: Pomona Model 5001 Adapter, Binding Posts To Miniature Bantam Plug FEATURES: • Adapts Bantam style equipment to binding posts and double banana plugs. MATERIALS: Upper Connecor: Binding Posts Brass per QQ-B-626, Alloy 360, ½ Hard. Finish: Nickel plated per QQ-N-290, Class 2, (.0002/.0003)
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QQ-B-626,
QQ-N-290,
Goldberg\FlukeDataSheet\d5001
D5001
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Untitled
Abstract: No abstract text available
Text: Crystal Oscillator PXO TCO-311 Series 6Pin J-Lead PXO * Features Application High frequency Transmission equipment Measurement system Specifications Type TCO-3111 Standard frequency TCO-3112 TCO-3113 TCO-3114 77.76 , 155.52 , 156.250 , 166.6286 , 622.08 , 666.5143 MHz
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TCO-311
TCO-3111
TCO-3112
TCO-3113
TCO-3114
230MHz
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OPA 2270
Abstract: HAll EFFECT SENSOR CODING hall device 810 DIN 3967 810a marking code transistor HAL810UT-K HAL810
Text: ADVANCE INFORMATION MICRONAS Edition March 28, 2001 6251-536-1AI HAL810 Programmable Linear Hall Effect Sensor MICRONAS HAL810 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications
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6251-536-1AI
HAL810
OPA 2270
HAll EFFECT SENSOR CODING
hall device 810
DIN 3967
810a marking code transistor
HAL810UT-K
HAL810
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tvs 6ae
Abstract: SMA6F20A marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me
Text: V ishay I n tertech n o l o g y, I n c . Diodes – Industry’s Lowest Profile SlimSMA Package I INNOVAT AND TEC O L OGY SMA6F5.0A thru SMA6F20A N HN DIODES O 19 62-2012 Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm
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SMA6F20A
23-Nov-11
VMN-PT0322-1206
tvs 6ae
marking 6ap
6bg 92 M
600-AG
6BG TVS
GENERAL SEMICONDUCTOR diodes marking code me
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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2SCR514p
Abstract: No abstract text available
Text: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)
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2SAR514P
SC-62)
OT-89>
2SCR514P
-300mA/
-15mA)
R1102A
2SCR514p
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Untitled
Abstract: No abstract text available
Text: 2SCR553P Datasheet NPN 2.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 2.0A MPT3 Base Collector Emitter 2SCR553P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR553P 3) Low VCE(sat) VCE(sat)=0.35V(Max.)
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2SCR553P
SC-62)
OT-89>
2SAR553P
700mA/35mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825
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2SA2701
2SA2702
2SA2071
SC-62)
OT-89>
2SC5824
2SC5825
-500mV
2SA2072
SC-63)
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Untitled
Abstract: No abstract text available
Text: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D
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2SAR544P
2SAR544D
2SAR544P
SC-62)
OT-89>
2SCR544P
2SCR544D
-50mA)
SC-63)
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T679-F2G2-1
Abstract: Q62703-Q5100 T679-E1F1-1
Text: LC TOPLED Low Current LED LS T679, LY T679, LG T679 Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-2 Gehäuse • Besonderheit des Bauteils: extrem breite Abstrahlcharakteristik; ideal für Hinterleuchtungen und Einkopplungen in Lichtleiter • Wellenlänge: 628 nm super-rot ,
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2000/Rolle,
8000/Rolle,
T679-F2G2-1
Q62703-Q5100
T679-E1F1-1
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"MARKING TE" US6
Abstract: 2301 mini transistor
Text: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment
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TE12L.
TE12H.
"MARKING TE" US6
2301 mini transistor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)
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2SK2162
2SJ338
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