h114
Abstract: No abstract text available
Text: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue Lot mark Cathode band φ 0.8 (0.03) H 29MIN. (1.14) Type 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch)
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62MIN.
H114B
H114D
H114E
H114F
29MIN.
PDE-H114-0
h114
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H114F
Abstract: H114B H114 H114D H114E
Text: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue Lot mark Cathode band φ 0.8 (0.03) H 29MIN. (1.14) Type 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch)
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H114B
H114D
H114E
H114F
29MIN.
62MIN.
H114F
H114B
H114
H114D
H114E
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H114B
Abstract: H114 HITACHI H114 H114D H114E H114F Hitachi DSA0047
Text: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue Lot mark Cathode band φ 0.8 (0.03) H 29MIN. (1.14) Type 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch)
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H114B
H114D
H114E
H114F
29MIN.
62MIN.
H114B
H114 HITACHI
H114
H114D
H114E
H114F
Hitachi DSA0047
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Untitled
Abstract: No abstract text available
Text: SCRH124B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH124B-3R9 SCRH124B-4R7 SCRH124B-6R8 SCRH124B-8R2 SCRH124B-100 SCRH124B-120
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SCRH124B
SCRH124B-3R9
SCRH124B-4R7
SCRH124B-6R8
SCRH124B-8R2
SCRH124B-100
SCRH124B-120
SCRH124B-150
SCRH124B-180
SCRH124B-220
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Untitled
Abstract: No abstract text available
Text: SCRH124B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH124B-3R9 SCRH124B-4R7 SCRH124B-6R8 SCRH124B-8R2 SCRH124B-100 SCRH124B-120
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SCRH124B
SCRH124B-3R9
SCRH124B-4R7
SCRH124B-6R8
SCRH124B-8R2
SCRH124B-100
SCRH124B-120
SCRH124B-150
SCRH124B-180
SCRH124B-220
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Untitled
Abstract: No abstract text available
Text: SC63LCB SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. LOW Profile 3.0mm max. height x 6.3mm square 3. Low DC resistance makes this product very suitable for large current applications CHARACTERISTICS SC63LCB-1R0 1.0
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SC63LCB
SC63LCB-1R5
SC63LCB-2R2
100KHZ
SC63LCB-3R6
SC63LCB-4R7
SC63LCB-6R2
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Untitled
Abstract: No abstract text available
Text: SCC5D23 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCC5D23-2R7 SCC5D23-3R3 SCC5D23-3R9 SCC5D23-4R7 SCC5D23-5R6
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SCC5D23
SCC5D23-2R7
SCC5D23-3R3
SCC5D23-3R9
SCC5D23-4R7
SCC5D23-5R6
SCC5D23-6R8
SCC5D23-8R2
SCC5D23-100
SCC5D23-120
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Untitled
Abstract: No abstract text available
Text: SC63LCB SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. LOW Profile 3.0mm max. height x 6.3mm square 3. Low DC resistance makes this product very suitable for large current applications CHARACTERISTICS SC63LCB-1R0 1.0 100KHZ
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SC63LCB
SC63LCB-1R5
SC63LCB-2R2
100KHZ
SC63LCB-3R6
SC63LCB-4R7
SC63LCB-6R2
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Untitled
Abstract: No abstract text available
Text: SCC5D23 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCC5D23-2R7 SCC5D23-3R3 SCC5D23-3R9 SCC5D23-4R7 SCC5D23-5R6
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SCC5D23
SCC5D23-2R7
SCC5D23-3R3
SCC5D23-3R9
SCC5D23-4R7
SCC5D23-5R6
SCC5D23-6R8
SCC5D23-8R2
SCC5D23-100
SCC5D23-120
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Untitled
Abstract: No abstract text available
Text: Specification Sheet Outdoor Extreme Eyeleds Outdoor Extreme is a range of exterior recessed LED pathway lighting, designed to last in harsh environmental conditions and heavy traffic areas. Outdoor Extreme is intended for decoration, orientation, marking for guiding, and safety, in
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150cm
200cm
500cm
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H114F
Abstract: H114B H114 H114E H114D
Text: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue H 29MIN. (1.14) Type Lot mark 62MIN. (2.44) • 高速スイッチング用 •拡散接合形ガラスモールド構造 φ 0.8
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H114B
H114D
H114E
H114F
29MIN.
62MIN.
H114F
H114B
H114
H114E
H114D
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DMN4060SVT
Abstract: dmn4060 2012 62m
Text: DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = 25°C 46mΩ @ VGS = 10V 4.8A 62mΩ @ VGS = 4.5V 4.1A 45V Low Input Capacitance Low On-Resistance Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
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DMN4060SVT
AEC-Q101
DS35702
DMN4060SVT
dmn4060
2012 62m
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Untitled
Abstract: No abstract text available
Text: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH47N60N
FCH47N60N
115nC)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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LN2306LT1G
236AB)
3000/Tape
LN2306LT3G
10000/Tape
06LT1G
OT-23
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N06 MOSFET
Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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LN2306LT1G
236AB)
3000/Tape
LN2306LT3G
10000/Tape
OT-23
N06 MOSFET
LN2306LT1G
n06g
ln2306
43m marking
N-Channel, 30V, 4.0A, Power MOSFET SOT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology
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LN2306LT1G
S-LN2306LT1G
AEC-Q101
236AB)
LN2306LT3G
S-LN2306LT3G
3000/Tape
10000/Tape
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FCH47N60N
Abstract: Tl141
Text: SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description • RDS on = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH47N60N
115nC)
FCH47N60N
Tl141
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Untitled
Abstract: No abstract text available
Text: FDS3992 Dual N-Channel PowerTrench MOSFET 100V, 4.5A, 62mΩ Features Applications • rDS ON = 54mΩ (Typ.), VGS = 10V, ID = 4.5A • DC/DC converters and Off-Line UPS • Qg(tot) = 11nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDS3992
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Untitled
Abstract: No abstract text available
Text: RQ5A030AP Pch -12V -3A Middle Power MOSFET Datasheet l Outline VDSS -12V RDS on (Max.) 62mΩ ID ±3.0A PD 1.0W TSMT3 l Inner circuit l Features 1) Low on - resistance.
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RQ5A030AP
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STM6920A
Abstract: WT6920AM
Text: WT6920AM DRAIN SOURCE VOLTAGE 6 5 D2 4 G2 5 AMPERES D2 7 3 S2 D1 G1 2 Features: DRAIN CURRENT 8 S1 1 P b Lead Pb -Free D1 Surface Mount N-Channel Enhancement Mode MOSFET 40 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)<35mΩ@VGS = 10V RDS(ON)<62mΩ@VGS = 4.5V
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WT6920AM
02-Aug-05
STM6920A
WT6920AM
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LR29862
Abstract: NBK030205-E10480B NBK101105-E184655
Text: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features t 7FSZGBTUBDUJOH t 4NBMMTJ[F t 8JEFSBOHFPGDVSSFOU rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE
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E10480
LR29862
NBK030205-E10480B
NBK101105-E184655
48hrs)
com/series/451
LR29862
NBK030205-E10480B
NBK101105-E184655
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Untitled
Abstract: No abstract text available
Text: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features t 7FSZGBTUBDUJOH t 4NBMMTJ[F t 8JEFSBOHFPGDVSSFOU rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE
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E10480
LR29862
NBK030205-E10480B
NBK101105-E184655
48hrs)
com/series/451
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FUSE 451
Abstract: NBK030205-E10480B LR29862 NBK101105-E184655 littelfuse 451
Text: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features t 7FSZGBTUBDUJOH t 4NBMMTJ[F t 8JEFSBOHFPGDVSSFOU rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE
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E10480
LR29862
NBK030205-E10480B
NBK101105-E184655
48hrs)
com/series/451
FUSE 451
NBK030205-E10480B
LR29862
NBK101105-E184655
littelfuse 451
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EIA rs 481-2
Abstract: No abstract text available
Text: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features • Very fast acting • Small size • Wide range of current rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE
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E10480
LR29862
RS-481-2
com/series/451
EIA rs 481-2
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