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    MARKING 720 TRANSISTOR Search Results

    MARKING 720 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING 720 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 720

    Abstract: P008B BF720 BF721
    Text: BF720 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF720 720 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS BF721


    Original     		PDF BF720 OT-223 BF721 OT-223 MARKING 720 P008B BF720 BF721

    BF marking code

    Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
    Text: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP


    Original     		PDF Q62702-F1238 Q62702-F1306 OT-223 BF marking code MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110

    FMMT720TA

    Abstract: FMMT720 MARKING 720 SOT23
    Text: A Product Line of Diodes Incorporated FMMT720 40V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -40V IC = -1.5A Continuous Collector Current ICM = -4A Peak Pulse Current


    Original     		PDF FMMT720 -220mV 625mW FMMT619 AEC-Q101 DS33238 FMMT720TA FMMT720 MARKING 720 SOT23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2274 NPN SILICON TRANSISTOR SWITCHING REGULATOR APPLICATIONS  FEATURES * High breakdown voltage VCBO≥1400V . * Ultra high-speed switching. * Wide SOA.  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		PDF UT2274 UT2274L-T92-B UT2274G-T92-B UT2274L-T92-K UT2274G-T92-K UT2274L-TM3-T UT2274G-TM3-T O-251 UT2274L-T60-K UT2274G-T60-K

    Untitled

    Abstract: No abstract text available
    Text: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPB180N10S4-02 PG-TO263-7-3 4N1002

    Untitled

    Abstract: No abstract text available
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2)

    4N06H1

    Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
    Text: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode

    Untitled

    Abstract: No abstract text available
    Text: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1 • Qualified according to JEDEC for target applications


    Original     		PDF IPB014N06N IEC61249-2-21 O263-7 014N06N

    Untitled

    Abstract: No abstract text available
    Text: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 1.4 mW • Superior thermal resistance ID 180 A • N-channel, normal level • Qualified according to JEDEC for target applications


    Original     		PDF IPB014N06N IEC61249-2-21 O263-7 014N06N

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		PDF 2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610

    4N04H0

    Abstract: IPB180N04S4-H0 DIODE D180 PG-TO263-7-3 DD12V ipb180n04
    Text: IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.1 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPB180N04S4-H0 PG-TO263-7-3 4N04H0 4N04H0 IPB180N04S4-H0 DIODE D180 PG-TO263-7-3 DD12V ipb180n04

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4

    K2610

    Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
    Text: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)


    Original     		PDF 2SK2610 K2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261

    mosfet for 900V, 6A

    Abstract: F109 FQA9N90
    Text: QFET FQA9N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90 mosfet for 900V, 6A F109

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 min (IC = 0.15 A)


    Original     		PDF 2SC5356 O-252 C5356

    FQA9N90

    Abstract: No abstract text available
    Text: QFET FQA9N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90 FQA9N90

    2SC5356

    Abstract: smd marking TF
    Text: Transistors SMD Type Silicon NPN Triple Diffused Type 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 min (IC = 0.15 A)


    Original     		PDF 2SC5356 O-252 C5356 2SC5356 smd marking TF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF BCW89 OT-23

    transistor 720 smd

    Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
    Text: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01


    Original     		PDF FMMT720 OT-23 625mW -50mA -100mA -75mA -10mA, -50mA 100MHz -20mA transistor 720 smd FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot

    ic 810

    Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF BCW89 OT-23 ic 810 IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89

    ABE 721

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF Q62702-F1238 Q62702-F1306 OT-223 A23SbGS ABE 721

    B 722 P

    Abstract: BB 722 DC DC BB 722
    Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF BF722 Q62702-F1238 Q62702-F1306 OT-223 B 722 P BB 722 DC DC BB 722

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		PDF G01b7b2 12-mm Q62702 F1238 OT-223 F1306 BF720 flS3b32Q Q01b7bS

    Untitled

    Abstract: No abstract text available
    Text: Central CZTA77 Semiconductor Corp. SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor man­ ufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    OCR Scan     		PDF CZTA77 OT-223 CP707 14-November OT-223