Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications
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LBAV99WT1G
LBAV99RWT1G
LBAV99WT1
LBAV99LT1.
LBAV99WT1
OT-323
SC-70)
LBAV99RWT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS
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BAV70LT1
236AB)
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BAV99LT1G
Abstract: BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G
Text: BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage
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BAV99LT1
BAV99LT1/D
BAV99LT1G
BAV99LT1
Code sot-23 on semiconductor pdf marking a7
onsemi 035 diode
SOT-23 Package onsemi
BAV99LT3
BAV99LT3G
SOT23 DIODE marking CODE AV
On semiconductor date Code BAV99LT1G
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a7 marking code sot 23
Abstract: SOT 23 A7 diode BAV99LT3G diode a7 SOT23 DIODE marking CODE AV marking A7 diode Switching diode 0.5 BAV99LT1 BAV99LT1G BAV99LT3
Text: BAV99LT1 Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage
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BAV99LT1
BAV99LT1/D
a7 marking code sot 23
SOT 23 A7 diode
BAV99LT3G
diode a7
SOT23 DIODE marking CODE AV
marking A7 diode
Switching diode 0.5
BAV99LT1
BAV99LT1G
BAV99LT3
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SBAW56LT1G
Abstract: BAW56LT1G
Text: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G http://onsemi.com Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318
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BAW56LT1G,
SBAW56LT1G,
BAW56LT3G,
SBAW56LT3G,
SSV1BAW56LT1G
AEC-Q101
OT-23
O-236)
BAW56LT1/D
SBAW56LT1G
BAW56LT1G
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A1.M
Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G
Text: BAW56LT1 Preferred Device Monolithic Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc
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BAW56LT1
BAW56LT1/D
A1.M
BAW56LT1
BAW56LT1G
BAW56LT3
BAW56LT3G
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SOT 23 marking code a6 diode
Abstract: BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23
Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current
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BAS16LT1
BAS16LT1/D
SOT 23 marking code a6 diode
BAS16LT1
BAS16LT1G
BAS16LT3
BAS16LT3G
SOT 23 A6 on
diode marking code A6
A6 SOT-23
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BAW56LT1
Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
Text: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit
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BAW56LT1
OT-23
O-236)
BAW56LT1/D
BAW56LT1
BAW56LT1G
BAW56LT3
BAW56LT3G
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BAV70LT1G
Abstract: SBAV70LT3 SBAV70LT1G
Text: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
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BAV70LT1G,
SBAV70LT1G,
BAV70LT3G,
SBAV70LT3G
AEC-Q101
OT-23
O-236)
BAV70LT1/D
BAV70LT1G
SBAV70LT3
SBAV70LT1G
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BAS16LT3G
Abstract: BAS16LT1G SBAS16LT1G
Text: BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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BAS16LT1G,
BAS16LT3G,
SBAS16LT1G,
SBAS16LT3G
AEC-Q101
BAS16LT1/D
BAS16LT3G
BAS16LT1G
SBAS16LT1G
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BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
Text: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit
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BAV70LT1
OT-23
O-236)
25laws
BAV70LT1/D
BAV70LT1
BAV70LT1G
BAV70LT3
BAV70LT3G
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SBAV99
Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
Text: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318
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BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
AEC-Q101
BAV99LT1/D
SBAV99
SBAV99LT1G
BAV99LT1G
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector −Emitter Voltage VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 100 mAdc Collector Current — Continuous
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MMBT2484LT1
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BAL99LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAL99LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1
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BAL99LT1/D
BAL99LT1
BAL99LT1
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BAL99LT1
Abstract: BAL99LT1G
Text: BAL99LT1 Switching Diode Features • Pb−Free Package is Available http://onsemi.com ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Maximum ratings are those values beyond which device damage can occur.
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BAL99LT1
OT-23
BAL99LT1/D
BAL99LT1
BAL99LT1G
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BAL99LT1
Abstract: No abstract text available
Text: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300
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BAL99LT1
236AB)
r14525
BAL99LT1/D
BAL99LT1
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BAV70LT1
Abstract: sot-23 body marking A4
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 w This device is available in Pb−free package s . Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or
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BAV70LT1
BAV70LT1/D
BAV70LT1
sot-23 body marking A4
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NUP1301ML3T1G
Abstract: SZNUP1301ML3T1G
Text: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .
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NUP1301ML3T1G,
SZNUP1301ML3T1G
NUP1301ML3T1G
JESD22
OT-23
IEC61000-4-2
NUP1301ML3T1/D
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Untitled
Abstract: No abstract text available
Text: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line http://onsemi.com NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .
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NUP1301ML3T1G,
SZNUP1301ML3T1G
NUP1301ML3T1G
JESD22
IEC61000â
NUP1301ML3T1/D
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BAW56LT1
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56LT1
r14525
BAW56LT1/D
BAW56LT1
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BAS16LT1
Abstract: No abstract text available
Text: ON Semiconductort Switching Diode BAS16LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS
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BAS16LT1
r14525
BAS16LT1/D
BAS16LT1
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Untitled
Abstract: No abstract text available
Text: BAL99LT1G Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum
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BAL99LT1G
OT-23
BAL99LT1/D
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BAV70LT1
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3
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BAV70LT1
r14525
BAV70LT1/D
BAV70LT1
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Untitled
Abstract: No abstract text available
Text: NUP2301MW6T1G, SZNUP2301MW6T1G Low Capacitance Diode Array for ESD Protection in Two Data Lines http://onsemi.com NUP2301MW6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .
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NUP2301MW6T1G,
SZNUP2301MW6T1G
NUP2301MW6T1G
JESD22
IEC61000â
NUP2301MW6T1/D
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