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    MARKING 855 SOT 23 6 LEAD Search Results

    MARKING 855 SOT 23 6 LEAD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 855 SOT 23 6 LEAD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications


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    PDF LBAV99WT1G LBAV99RWT1G LBAV99WT1 LBAV99LT1. LBAV99WT1 OT-323 SC-70) LBAV99RWT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS


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    PDF BAV70LT1 236AB)

    BAV99LT1G

    Abstract: BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G
    Text: BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage


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    PDF BAV99LT1 BAV99LT1/D BAV99LT1G BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G

    a7 marking code sot 23

    Abstract: SOT 23 A7 diode BAV99LT3G diode a7 SOT23 DIODE marking CODE AV marking A7 diode Switching diode 0.5 BAV99LT1 BAV99LT1G BAV99LT3
    Text: BAV99LT1 Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage


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    PDF BAV99LT1 BAV99LT1/D a7 marking code sot 23 SOT 23 A7 diode BAV99LT3G diode a7 SOT23 DIODE marking CODE AV marking A7 diode Switching diode 0.5 BAV99LT1 BAV99LT1G BAV99LT3

    SBAW56LT1G

    Abstract: BAW56LT1G
    Text: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G http://onsemi.com Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable  S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318


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    PDF BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G AEC-Q101 OT-23 O-236) BAW56LT1/D SBAW56LT1G BAW56LT1G

    A1.M

    Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G
    Text: BAW56LT1 Preferred Device Monolithic Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc


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    PDF BAW56LT1 BAW56LT1/D A1.M BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G

    SOT 23 marking code a6 diode

    Abstract: BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23
    Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current


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    PDF BAS16LT1 BAS16LT1/D SOT 23 marking code a6 diode BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23

    BAW56LT1

    Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
    Text: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit


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    PDF BAW56LT1 OT-23 O-236) BAW56LT1/D BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G

    BAV70LT1G

    Abstract: SBAV70LT3 SBAV70LT1G
    Text: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements


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    PDF BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G AEC-Q101 OT-23 O-236) BAV70LT1/D BAV70LT1G SBAV70LT3 SBAV70LT1G

    BAS16LT3G

    Abstract: BAS16LT1G SBAS16LT1G
    Text: BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT3G BAS16LT1G SBAS16LT1G

    BAV70LT1

    Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
    Text: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit


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    PDF BAV70LT1 OT-23 O-236) 25laws BAV70LT1/D BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G

    SBAV99

    Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
    Text: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


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    PDF BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D SBAV99 SBAV99LT1G BAV99LT1G

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector −Emitter Voltage VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 100 mAdc Collector Current — Continuous


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    PDF MMBT2484LT1

    BAL99LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAL99LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1


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    PDF BAL99LT1/D BAL99LT1 BAL99LT1

    BAL99LT1

    Abstract: BAL99LT1G
    Text: BAL99LT1 Switching Diode Features • Pb−Free Package is Available http://onsemi.com ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Maximum ratings are those values beyond which device damage can occur.


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    PDF BAL99LT1 OT-23 BAL99LT1/D BAL99LT1 BAL99LT1G

    BAL99LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300


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    PDF BAL99LT1 236AB) r14525 BAL99LT1/D BAL99LT1

    BAV70LT1

    Abstract: sot-23 body marking A4
    Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 w This device is available in Pb−free package s . Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or


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    PDF BAV70LT1 BAV70LT1/D BAV70LT1 sot-23 body marking A4

    NUP1301ML3T1G

    Abstract: SZNUP1301ML3T1G
    Text: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .


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    PDF NUP1301ML3T1G, SZNUP1301ML3T1G NUP1301ML3T1G JESD22 OT-23 IEC61000-4-2 NUP1301ML3T1/D

    Untitled

    Abstract: No abstract text available
    Text: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line http://onsemi.com NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .


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    PDF NUP1301ML3T1G, SZNUP1301ML3T1G NUP1301ML3T1G JESD22 IEC61000â NUP1301ML3T1/D

    BAW56LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current


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    PDF BAW56LT1 r14525 BAW56LT1/D BAW56LT1

    BAS16LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Diode BAS16LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS


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    PDF BAS16LT1 r14525 BAS16LT1/D BAS16LT1

    Untitled

    Abstract: No abstract text available
    Text: BAL99LT1G Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum


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    PDF BAL99LT1G OT-23 BAL99LT1/D

    BAV70LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3


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    PDF BAV70LT1 r14525 BAV70LT1/D BAV70LT1

    Untitled

    Abstract: No abstract text available
    Text: NUP2301MW6T1G, SZNUP2301MW6T1G Low Capacitance Diode Array for ESD Protection in Two Data Lines http://onsemi.com NUP2301MW6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .


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    PDF NUP2301MW6T1G, SZNUP2301MW6T1G NUP2301MW6T1G JESD22 IEC61000â NUP2301MW6T1/D