4435a
Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V
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2SB772P
Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600
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SC-62
2SB772P
SOT-23 marking 717
cht9435zpt
CH3906XPT
9435Z
CHT2907XPT
CH772PT
CH3906
CH772P
2SB772PT-E
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AN1001
Abstract: 94358 IRFS38N20D IRF1010 IRF530S IRFB38N20D IRFSL38N20D 94358a
Text: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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4358A
IRFB38N20D
IRFS38N20D
IRFSL38N20D
AN1001)
O-220AB
O-262
AN1001
94358
IRFS38N20D
IRF1010
IRF530S
IRFB38N20D
IRFSL38N20D
94358a
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IRFB52N15D
Abstract: AN1001 IRF1010 IRF530S IRFS52N15D IRFSL52N15D
Text: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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4357A
IRFB52N15D
IRFS52N15D
IRFSL52N15D
AN1001)
O-220AB
O-262
IRFB52N15D
AN1001
IRF1010
IRF530S
IRFS52N15D
IRFSL52N15D
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AN1001
Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D ir 119 e
Text: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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4357A
IRFB52N15D
IRFS52N15D
IRFSL52N15D
AN1001)
O-220AB
O-262
AN1001
IRF1010
IRF530S
IRFB52N15D
IRFS52N15D
IRFSL52N15D
ir 119 e
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Untitled
Abstract: No abstract text available
Text: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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4358A
IRFB38N20D
IRFS38N20D
IRFSL38N20D
AN1001)
O-220AB
O-262
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AN1001
Abstract: IRF1010 IRF530S IRFB38N20D IRFS38N20D IRFSL38N20D
Text: PD - 94358 IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFB38N20D
IRFS38N20D
IRFSL38N20D
AN1001)
O-220AB
O-262
O-220AB
AN1001
IRF1010
IRF530S
IRFB38N20D
IRFS38N20D
IRFSL38N20D
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94358a
Abstract: 94358 IRFS38N20D AN1001 IRF1010 IRF530S IRFB38N20D IRFSL38N20D
Text: PD - 94358A IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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4358A
IRFB38N20D
IRFS38N20D
IRFSL38N20D
AN1001)
O-220AB
O-262
94358a
94358
IRFS38N20D
AN1001
IRF1010
IRF530S
IRFB38N20D
IRFSL38N20D
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AN1001
Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D
Text: PD - 94357 IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRFB52N15D
IRFS52N15D
IRFSL52N15D
AN1001)
O-220AB
O-262
O-220AB
AN1001
IRF1010
IRF530S
IRFB52N15D
IRFS52N15D
IRFSL52N15D
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IRF (10A) 55V
Abstract: AN-994 IRFR120 IRFU120 IRLR024N IRLU024N
Text: PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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IRLR/U014N
IRLR024N)
IRLU024N)
O-252AA
EIA-481
EIA-541.
EIA-481.
IRF (10A) 55V
AN-994
IRFR120
IRFU120
IRLR024N
IRLU024N
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IRF Power MOSFET code marking
Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
Text: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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94356B
IRFR430A
IRFU430A
EIA-481
EIA-541.
EIA-481.
IRF Power MOSFET code marking
EIA-541
IRFR430A
IRFU430A
R120
IRF MOSFET 10A P
94356
IRF 250V 100A
IRF 50A
IRF GATE LOGIC
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IRF (10A) 55V
Abstract: irfu 210a AN-994 IRFR120 IRFU120 IRLR024N IRLU024N pcb layout for TO 252AA b965
Text: PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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IRLR/U014N
IRLR024N)
IRLU024N)
O-252AA
EIA-481
EIA-541.
EIA-481.
IRF (10A) 55V
irfu 210a
AN-994
IRFR120
IRFU120
IRLR024N
IRLU024N
pcb layout for TO 252AA
b965
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IRLR014N
Abstract: IRLR024N IRLU024N AN-994 IRFR120 IRFU120
Text: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-15 IRLR014N HEXFET D-Pak PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRLR024N
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IRLR014N
IRLR/U014N
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
IRLR024N
IRLU024N
AN-994
IRFR120
IRFU120
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94356
Abstract: IRFR120 IRFR430A IRFU120 IRFU430A
Text: PD - 94356 IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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IRFR430A
IRFU430A
94356
IRFR120
IRFR430A
IRFU120
IRFU430A
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94356
Abstract: No abstract text available
Text: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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4356A
IRFR430A
IRFU430A
94356
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Untitled
Abstract: No abstract text available
Text: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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4356A
IRFR430A
IRFU430A
08-Mar-07
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9435
Abstract: No abstract text available
Text: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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IRFR420A
IRFU420A
08-Mar-07
9435
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IRFR120
Abstract: IRFR430A IRFU120 IRFU430A 753x
Text: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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4356A
IRFR430A
IRFU430A
12-Mar-07
IRFR120
IRFR430A
IRFU120
IRFU430A
753x
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IRFR420A
Abstract: IRFR120 IRFU120 IRFU420A pn junction diode
Text: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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IRFR420A
IRFU420A
12-Mar-07
IRFR420A
IRFR120
IRFU120
IRFU420A
pn junction diode
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IRF igbt gate driver
Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Text: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns
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IRFP17N50LS
170ns
SMD-247
O-247AC.
SMD-247
P450S
IRFP450S
IRF igbt gate driver
MOSFET IRF 630
st smd diode marking code ET
MOSFET IRF 630 Datasheet
MOSFET IRF 570
MOSFET IRF 603
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IRF6217
Abstract: AN1001
Text: PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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IRF6217
AN1001)
-150V
IA-48
IRF6217
AN1001
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Untitled
Abstract: No abstract text available
Text: PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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IRF6217
AN1001)
-150V
IA-48
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cDAQ-9172
Abstract: 779137-01 779351-01 NI-9205 9435 NI 9933 779018-01 PCI-7833R 779140-01 NI 9933 37-pin connector kit
Text: C Series Digital Input and Counter/Timer Modules NI 9401, NI 9411, NI 942x, NI 9435 NEW! • High- and low-speed 24 V logic IEC 1131-2 , 5 V/TTL, differential/ single-ended inputs, or universal AC/DC inputs up to 250 VAC/VDC • Isolation up to 2,300 Vrms (withstand),
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342608C-01*
342608C-01
2007-9394-161-101-D
cDAQ-9172
779137-01
779351-01
NI-9205
9435
NI 9933
779018-01
PCI-7833R
779140-01
NI 9933 37-pin connector kit
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s/ksmh12/2.27/30/KI9435DY
Abstract: 9435 ic mosfet 9435
Text: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET KI9435DY • Features ● 5.3 A, -30 V. RDS ON = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)
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KI9435DY
s/ksmh12/2.27/30/KI9435DY
9435 ic
mosfet 9435
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