A235L
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. 5 D • Beam lead technology • Low dimension • High performance • Low barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 D 52 D
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VCE05181
Q62702-A803
Q62702-A798
Q62702-A807
Q62702-A811
EHA07010
Sto115
DDbbb35
A235L
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cfy 19 siemens
Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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VXM05208
Q62703-F106
Q62703-F107
Q62703-F108
0Qfcj75Cn
cfy 19 siemens
cfy 14 siemens
CFY 18
siemens gaas fet
CFY 19
cfy siemens
cfy 25-20 cfy 25-17
CFY 10
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BFX60
Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
Text: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2
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BFX60
BFX60
Q60206-X60
023SbOS
fl23SbD5
H7B marking
H7B transistor
H7B* marking
microphone
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)
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Q68000-A4417
OT-23
EHP00770
EHP00772
S35bOÂ
01EES4S
A235b05
012254b
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II
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Q62702-C2280
OT-323
A235b05
aa3Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28 Silicon Switching Diode Array • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * o Package1) SOT-143 NJ - È H- «1 3 2 0- N - 0
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Q62702-A77
OT-143
CHA07008
D1SD577
a235bD
fi235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4
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Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
A235b05
E35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol
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Q62702-G38
OT-143
OU00007
fl235bD5
fi235bD5
0235bD5
Q122235
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c33725
Abstract: c33740 Bc337
Text: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1
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Q62702-C313
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
BC337
A235b05
c33725
c33740
Bc337
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation
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Q68000-A6481
Q68000-A6473
OT-23
2222/A
fi235bD5
0155S2S
a235b05
012552b
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906
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Q62702-Z2030
OT-223
EHN00057
A235bG5
122M7C
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol
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Q6800-A6477
OT-23
fi235b05
012250e
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10k£l, R2=10kfl Marking Ordering Code Pin Configuration BCR 133 WCs 1 =B Q62702-C2256 Package N> II m Type 3=C
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10kfl)
Q62702-C2256
OT-23
ambien35b05
a235b05
35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 NPN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration
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Q62702-Z2028
Q62702-Z2025
OT-223
0235bD5
D1254bfl
fl235bQ5
535bG5
G1E247G
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings
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OD-323
a235fc
DlHD17fl
Q15Q1Ã
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors • • • • • BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 NPN Type Marking BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 CF
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Q62702-C1714
Q62702-C1867
Q62702-C1868
Q62702-C1869
OT-89
fi235b05
012101b
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Untitled
Abstract: No abstract text available
Text: S IE M E N S PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 420, BF 422 NPN Type Marking Ordering Code BF 421 BF 423
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Q62702-F532
Q62702-F496
a235bOS
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BCX70
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking
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Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
BCX70
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BFR15A
Abstract: No abstract text available
Text: SIEM EN S NPN Silicon RF Transistor BFR 15A • For broadband amplifiers up to 1 G H z at collector currents up to 20 mA. E S D : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR15A B F R 15A Q62702-F460
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BFR15A
BFR15A
Q62702-F460
fl235b05
GDb72b3
EHT08040
flE35b05
0Db72b4
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings
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Q68000-A8396
OT-89
5235bQ5
G122b23
fl53Sb05
E35Li05
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F938
OT-23
IS21el2
IS21/S12I
0S35b05
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Tuning Varactors BBY 34 C BBY 34 D • Hyperabrupt junction tuning diode • Frequency linear tuning range 4 . 12 V • High figure of merit Type Marking Ordering Code BBY 34 C - Q62702-B257 BBY 34 D Pin Configuration Package1’ D ° Q62702-B194
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Q62702-B257
Q62702-B194
a235bD5
B235bOS
Qbb72
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smd transistor marking code XC
Abstract: XC SMD MARKING
Text: B S S 169 I nf ine on technologies Preliminary Data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type ^DS BSS 169 100 V 0.12 A ñDS on Package Marking Ordering Code 12Q SOT-23 SFs Q67000-S322 Maximum Ratings
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OT-23
Q67000-S322
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd transistor marking code XC
XC SMD MARKING
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