MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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MMBT5401
Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L
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MMBT5401
-150V
350mW
OT-23
MMBT5401L
MMBT5401-AE3-R
MMBT5401L-AE3-R
QW-R206-011
MMBT5401
MMBT5401L
MMBT5401L-AE3-R
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2SC3647
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs
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2SC3647
OT-89
2SC3647L
2SC3647G
2SC3647-x-AB3-R
2SC3647L-x-AB3-R
2SC3647G-x-AB3-R
QW-R208-039
2SC3647
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2SC3647
Abstract: 2SC3647-AB3-R 2SC3647L-AB3-R
Text: UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density,
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2SC3647
OT-89
2SC3647L
2SC3647-AB3-R
2SC3647L-AB3-R
QW-R208-039
2SC3647
2SC3647L-AB3-R
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QW-R206-081
Abstract: marking C5 2SA1774 2SC4617 2SC4617L-AE3-R 2SC4617-AE3-R hFE is transistor
Text: UNISONIC TECHNOLOGIES CO., 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES 2 * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 3 MARKING C5 SOT-23 *Pb-free plating product number: 2SC4617L PIN CONFIGURATION PIN NO. PIN NAME
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2SC4617
2SA1774
OT-23
2SC4617L
2SC4617-AE3-R
2SC4617L-AE3-R
QW-R206-081
marking C5
2SA1774
2SC4617
2SC4617L-AE3-R
hFE is transistor
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B340C
Abstract: Diode IR 1254 B340 B340T-02
Text: SCS-1254 SPECIAL CUSTOMER PARTS SPECIFICATION SHEET 1. Part information Part Number: Description: Outline: Marking: Package: B340T-02 Special PD, RθJL, RθJA , Mechanical Dimensions SMC B340+Cathode Band+DII Logo+Date Code Tape/Reel Issue date: Series No.:
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SCS-1254
B340T-02
P746A
371S0020
QP051-4
QP051-4
B340C
Diode IR 1254
B340
B340T-02
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he 8050s
Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
Text: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL
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8550S
700mA
8050S
OT-23
8550SL
8550S-AE3-R
8550SL-AE3-R
OT-23
QW-R206-002
he 8050s
transistor marking B9
MARKING B9 sot-23
8550SL
UTC 8550SL
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PDF
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C8550S
Abstract: 8550S 8550SL transistor marking B9
Text: UNISONIC TECHNOLOGIES CO.,LTD. 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 3 SOT-23 MARKING *Pb-free plating product number: 8550SL
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8550S
700mA
8050S
OT-23
8550SL
8550S-AE3-R
8550SL-AE3-R
OT-23
QW-R206-002
C8550S
8550S
8550SL
transistor marking B9
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smd marking code PH
Abstract: SMD MARKING CODE M 4 Diode smd diode marking code t3
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB158 VHF variable capacitance diode Product specification Supersedes data of May 1996 1999 Jun 10 Philips Semiconductors Product specification VHF variable capacitance diode BB158 FEATURES • Excellent linearity
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M3D049
BB158
MAM130
BB158
OD323
BB148
smd marking code PH
SMD MARKING CODE M 4 Diode
smd diode marking code t3
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smd diode code pj
Abstract: Diode smd code PJ smd diode code pj 50 smd diode code pj 29 smd diode pj 55 smd marking code pJ smd diode code PJ 27 smd diode code pj 21 Diode type SMD marking PJ smd diode code pj 5
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB159 UHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1996 Oct 03 Philips Semiconductors Product specification UHF variable capacitance diode BB159 FEATURES • Excellent linearity
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M3D049
BB159
MAM130
BB159
OD323
BB149
smd diode code pj
Diode smd code PJ
smd diode code pj 50
smd diode code pj 29
smd diode pj 55
smd marking code pJ
smd diode code PJ 27
smd diode code pj 21
Diode type SMD marking PJ
smd diode code pj 5
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DIODE smd marking 821
Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology
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M3D049
BB164
OD323
BB164
DIODE smd marking 821
smd diode marking sm 34
smd diode 6F
MCC SMD DIODE
Diode smd code sm 97
diode SMD CODE sm 17
smd marking BLD
Diode smd marking 44
st smd diode marking code
marking 501 sod323
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smd diode PE
Abstract: "MARKING CODE PE" BB155
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB155 Low-voltage variable capacitance diode Product specification 1996 Sep 20 Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread
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M3D049
BB155
MAM130
OD323)
BB155
OD32at
smd diode PE
"MARKING CODE PE"
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PDF
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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TA4008F
Abstract: s22p
Text: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current l x =9mA (Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND E VCC = 2.7~3.3V MARKING
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OCR Scan
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TA4008F
1000pF
TA4008F
s22p
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PDF
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JR MARKING
Abstract: No abstract text available
Text: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value
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OCR Scan
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IMBD4448
OT-23,
OT-23
JR MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=10k£2, R2=47K£i Marking Ordering Code Pin Configuration BCR 135W WJs Q62702-C2287 1 =B Package LU II OJ Type
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OCR Scan
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Q62702-C2287
OT-323
E3Sb05
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PDF
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Untitled
Abstract: No abstract text available
Text: TA4101F TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A 1 fl 1 F • M m ■ ■ ■ ■ UHF VHF MIX APPLICATION FEATURES • Double Balance circuit PIN ASSIGNMENT TOP VIEW MARKING 8 7 6 5 n n n n 8 7 6 5 n n n n / . / 4101F u
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OCR Scan
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TA4101F
4101F
860MHz
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PDF
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USB cable AWM 2725 vw-1
Abstract: awm 2725 vw-1 USB cable AWM 2725 awm style 2725 VW-1 AWM VW-1 30V awm 2725 VW 2725 AWM VW- 30V awm 2725 30v awm style 2725 80 maxxtro usb cable
Text: IT 7 L O P1 3 w m . £ P2 D D PIN OUT NOTES: MATERIALS 1.1 CABLE: [ 7/0.12 BC * 1PAIR + (7/0.2 BC) * 2C], AL-FOIL AND BRAID (48/0.12 ALM) SHIELDED, GREY PVC JACKET. CABLE MARKING: Maxxtro AWM STYLE 2725 80*0 30V VW-1 USB2.0 CABLE 1.2 CONNECTOR: P1: USB A TYPE MALE: GOLD FLASH
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OCR Scan
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NING60
P10031102-E
USB cable AWM 2725 vw-1
awm 2725 vw-1
USB cable AWM 2725
awm style 2725 VW-1
AWM VW-1 30V
awm 2725 VW
2725 AWM VW- 30V
awm 2725 30v
awm style 2725 80
maxxtro usb cable
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 0.5A/30V EP05Q03L FEATURES OJEDEC SOD-123 Package OVery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ ^ M onth of Mfg. A = Jan . B = F e b .-L = D e c . Y e a r of Mfg. 7=1997
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OCR Scan
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A/30V
EP05Q03L
OD-123
EP05Q03L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA4101F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T 4 A 1 1 SILICON MONOLITHIC F UHF VHF M IX APPLICATION FEATURES • Double Balance circuit PIN ASSIGNMENT TOP VIEW MARKING 8 7 6 5 n n n n 8 7 6 5 n n n n TYPE N A M E I/ " LOT No. 4101F / / •
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OCR Scan
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TA4101F
4101F
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PDF
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S3V 05
Abstract: No abstract text available
Text: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3
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3SK240
S3V 05
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PDF
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MDL2416
Abstract: No abstract text available
Text: MDL2416C MDL2416TXVB SIEMENS .15" Red, 4-Digit, 16 Segment Plus Decimal HI-REL Alphanumeric Intelligent Display With Memory/Decoder/Driver P a c k a g e D im e n sio n s in In ch e s m m a « r . - - r 1 Marking 2? 1 150 (3 81) * 19(4 03) 1 295 ± 003
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MDL2416C
MDL2416TXVB
MDL2416
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PDF
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tz 1034 210
Abstract: 02CZ27 02CZ12 zener diode 1282 tz 1034
Text: TOSHIBA 02CZ2.0-02CZ47 TOSHIBA ZENZER DIODE SILICON EPITAXIAL PLANAR TYPE Q2CZ2.Q~Q2CZ47 CONSTANT VOLTAGE REGULATION APPLICATIONS. U nit in mm Weight : 0.012g MARKING in 0071 # # # T O S H IB A is co n tin u ally w o rk in g to im prove the q u a lity and th e re lia b ility o f its products. N evertheless, se m icon d u ctor devices in ge n e ral can
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02CZ2
0-02CZ47
Q2CZ47
100X80X1
40x50x0
tz 1034 210
02CZ27
02CZ12
zener diode 1282
tz 1034
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PDF
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