fultec
Abstract: C650-180-WH C650-100-WH month marking TBU C650 P40-G240-WH P850-G120-WH P850-U260-WH P850-G200-WH
Text: TRANSIENT BLOCKING UNITS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March, 2009 Change in Marking and Packaging Effective immediately, the Bourns TBU™ product families cited below are offered in tape-and-reel
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FU0932
fultec
C650-180-WH
C650-100-WH
month marking
TBU C650
P40-G240-WH
P850-G120-WH
P850-U260-WH
P850-G200-WH
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fultec
Abstract: C650-180-WH P40-G240-WH P850-G120-WH
Text: TRANSIENT BLOCKING UNITS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March, 2009 Change in Marking and Packaging Effective immediately, the Bourns TBU™ product families cited below are offered in tape-and-reel
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200-WH
P850-G120-WH
P850-G200-WH
P40-G240-WH
FU0932
fultec
C650-180-WH
P40-G240-WH
P850-G120-WH
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BTD2195M3
Abstract: No abstract text available
Text: CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2006.08.28 Page No. : 1/5 NPN Epitaxial Planar Transistor BTD2195M3 Description The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application.
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C654M3
BTD2195M3
BTD2195M3
OT-89
R2120
UL94V-0
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A1210
Abstract: No abstract text available
Text: Spec. No. : C656F3 Issued Date : 2007.02.02 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.
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C656F3
BTA1210F3
BTA1210F3
O-263
UL94V-0
A1210
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BTB1580M3
Abstract: sot89 bn sot-89 MARKING CODE BN
Text: CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2006.08.28 Page No. : 1/5 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
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C655M3
BTB1580M3
BTB1580M3
OT-89
UL94V-0
sot89 bn
sot-89 MARKING CODE BN
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sot-223 code marking
Abstract: transistor npn 2A sot 23 BTD2195
Text: Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted.
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C654L3
BTD2195L3
BTD2195L3
OT-223
UL94V-0
sot-223 code marking
transistor npn 2A sot 23
BTD2195
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C5103
Abstract: transistor C5103 semiconductor C5103 e semiconductor C5103 k c5103 C5103 e C5103 Transistor BTA1952I3 BTC5103 BTC5103I3
Text: CYStech Electronics Corp. High Speed Switching Transistor BVCEO IC RCESAT BTC5103I3 Features Spec. No. : C651I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 60V 5A 110mΩ • Low VCE sat , VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A
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BTC5103I3
C651I3
BTA1952I3
O-251
UL94V-0
C5103
transistor C5103
semiconductor C5103 e
semiconductor C5103
k c5103
C5103 e
C5103 Transistor
BTA1952I3
BTC5103
BTC5103I3
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CYStech Electronics
Abstract: sot-223 code marking BTP953L3
Text: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage
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C657L3
BTP953L3
OT-223
UL94V-0
CYStech Electronics
sot-223 code marking
BTP953L3
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D2195
Abstract: D219
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2195J3 Description Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
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BTD2195J3
C654J3
BTD2195J3
O-252
UL94V-0
D2195
D219
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transistor c1510
Abstract: c1510 transistor c1510 C-1510 BTC1510I3 C652I3
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510I3 Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date :2009.02.04 Page No. : 1/6 150V 10A 220mΩ Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
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BTC1510I3
C652I3
BTC1510I3
O-251
R2120
UL94V-0
transistor c1510
c1510 transistor
c1510
C-1510
C652I3
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A1640
Abstract: A1640 pnp transistor a1640 BTA1640I3
Text: Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640I3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A
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C657I3
BTA1640I3
O-251
UL94V-0
A1640
A1640 pnp
transistor a1640
BTA1640I3
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to252 footprint wave soldering
Abstract: B1580
Text: Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTB1580J3 BVCEO IC RCESAT -120V -4A 600mΩ Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
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C655J3
BTB1580J3
-120V
BTB1580J3
O-252
UL94V-0
to252 footprint wave soldering
B1580
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D1980
Abstract: BTD1980J3 Width380S
Text: CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2209.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1980J3 BVCEO IC RCESAT 120V 4A 600mΩ Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
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C654J3
BTD1980J3
BTD1980J3
O-252
UL94V-0
D1980
Width380S
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transistor c1510
Abstract: C1510 c1510 transistor C-1510 BTC1510J3
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510J3 Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 150V 10A 220mΩ Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
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BTC1510J3
C652J3
BTC1510J3
O-252
O-252
R2120
C652J3
UL94V-0
transistor c1510
C1510
c1510 transistor
C-1510
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MIL-STD-202f Method 103b
Abstract: NBK290502-E10480 NBK260202-E10480 SU05001-2015 F 10A H 250V fuse Thermal Fuse 125V 5A C6575 101D NBK010702-E10480 T 10A H 250V fuse
Text: Axial Lead and Cartridge Fuses Designed to METI Standard 5 x 20 mm Medium-Acting Fuse 232 Series • Designed to Japanese Standard JIS C6575. • Available in Cartridge, Axial and Radial Lead Format. • Available in ratings of 1A to 10A. • Improved I2 t
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C6575.
125VAC,
A-10A
MIL-STD-202F
SU05001-2001
SU05001-2015
NBK010702-E10480
NBK290502-E10480
MIL-STD-202f Method 103b
NBK260202-E10480
SU05001-2015
F 10A H 250V fuse
Thermal Fuse 125V 5A
C6575
101D
T 10A H 250V fuse
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PT10m
Abstract: A1210 BTA1210J3
Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
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C656J3
BTA1210J3
-120V
BTA1210J3
O-252
UL94V-0
PT10m
A1210
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C650
Abstract: No abstract text available
Text: PL IA NT Features CO M • Formerly The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible
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G5200AS
C650
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C650
Abstract: C650-180-WH C850 GR-1089 GR-974 c650-100
Text: PL IA NT Features CO M • Formerly The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible
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G5200AS
C650
C650-180-WH
C850
GR-1089
GR-974
c650-100
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C650-180-WH
Abstract: G5200AS Cx50-100-WH c650 diode fultec C650 C850 GR-1089 GR-974 TBU C650
Text: PL IA NT Features CO M • Formerly The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible
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G5200AS
C650-180-WH
Cx50-100-WH
c650 diode
fultec
C650
C850
GR-1089
GR-974
TBU C650
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Untitled
Abstract: No abstract text available
Text: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 Overcurrent Protection Device PRODUCT: microSMD075F DOCUMENT: SCD 25267 PCN: C65102, RF0404 REV LETTER: D
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microSMD075F
C65102,
RF0404
PS300,
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RF0404
Abstract: No abstract text available
Text: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 Overcurrent Protection Device PRODUCT: microSMD075F DOCUMENT: SCD 25267 PCN: C65102, RF0404 REV LETTER: C
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microSMD075F
C65102,
RF0404
PS300,
RF0404
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T63-C650X
Abstract: 900VV
Text: Surge Arrester 3-Electrode-Arrester T63-C650X Ordering code: B88069X6990B102 DC spark-over voltage 1 2) 4) 550 … 800 V Impulse spark-over voltage 4) at 100 V/µs - for 99 % of measured values - typical values of distribution < 900 < 800 V V < 1000 < 900
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T63-C650X
B88069X6990B102
57845/VDE0845
T63-C650X
900VV
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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OCR Scan
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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n60c
Abstract: NA60 NA60 resistor Rn65d resistor na65 10 resistor NE55 RN60D N55D Resistors NC55 dale rn60c
Text: MODELS NE, NC, CT, NA Metal Film Resistors Military, MIL-R-10509, Qualified, Type RN, Precision FEATURES • Low noise and low inductance characteristics • Blue epoxy encapsulation over moisture resistant polyimide varnish undercoat • Special marking available
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OCR Scan
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MIL-R-10509,
100PPM/
MIL-STD-1276.
RN50FF
50PPM/-C)
500PP
100PPM
n60c
NA60
NA60 resistor
Rn65d resistor
na65 10 resistor
NE55
RN60D
N55D
Resistors NC55
dale rn60c
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