BCX70L
Abstract: BCX70
Text: UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 1 CG 2 3 SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70L ABSOLUTE MAXIMUM RATINGS Ta = 25℃ unless otherwise noted PARAMETER Collector-Base Voltage
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BCX70
OT-23
BCX70L
QW-R206-080
BCX70L
BCX70
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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TF2123
TF2123
TF2123L-xx-AE3-R
TF2123G-xx-AE3-R
TF2123L-xx-AN3-R
TF2123G-xx-AN3-R
TF2123L-xx-AQ3-R
TF2123G-xx-AQ3-R
OT-23
OT-523
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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TF202
TF202
TF202L-x-AE3-R
TF202G-x-AE3-R
TF202L-x-AN3-R
TF202G-x-AN3-R
TF202L-x-AC3-R
TF202G-x-AC3-R
TF202L-x-A3C-R
TF202G-x-A3C-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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Original
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TF202
TF202
TF202L-x-AE3-R
TF202G-x-AE3-R
TF202L-x-AN3-R
TF202G-x-AN3-R
TF202L-x-AC3-R
TF202G-x-AC3-R
TF202L-x-A3C-R
TF202G-x-A3C-R
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CAPACITOR MICROPHONE
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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Original
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TF2123
TF2123
TF2123G-xx-AE3-R
TF2123G-xx-AN3-R
TF2123G-xx-AQ3-R
TF2123L-xx-AE3-R
OT-23
OT-523
OT-723
QW-R206-106
CAPACITOR MICROPHONE
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SOT-113S
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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TF202
TF202
TF202G-x-AE3-R
TF202G-x-AN3-R
TF202G-x-AC3-R
TF202L-x-A3C-R
TF202G-x-A3C-R
TF202G-x-AQ3-R
QW-R210-001
SOT-113S
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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AEC-Q101
LBAS70LT1G
S-LBAS70LT1G
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LBAS70LT1G
S-LBAS70LT1G
AEC-Q101
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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AEC-Q101
LBAS70LT1G
S-LBAS70LT1G
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION
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LBAS70LT1G
BAS70
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04ltage
LBAS70LT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70XLT1G Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
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LBAS70XLT1G
BAS70
LBAS70LT1G
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04LT3G
OT-23
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BAS70
Abstract: BAS70-04 LBAS70-06LT1G
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION
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LBAS70LT1G
BAS70
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04everse
LBAS70LT1G
OT-23
BAS70-04
LBAS70-06LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LBAS70LT1G
S-LBAS70LT1G
AEC-Q101
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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marking JC
Abstract: 2SC2735 600 marking
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2735 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25
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2SC2735
OT-23
marking JC
2SC2735
600 marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
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LBAS70XLT1G
LBAS70LT1G
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04LT3G
LBAS70-05LT1G
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C32F
Abstract: marking C32R C32K marking code C32f MARKING CODE CGK CG5 marking C325 marking CGK sn74lvc1g32dry2 SCES219R
Text: SN74LVC1G32 www.ti.com SCES219R – APRIL 1999 – REVISED JUNE 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation
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SN74LVC1G32
SCES219R
24-mA
000-V
A114-A)
A115-A)
C32F
marking C32R
C32K
marking code C32f
MARKING CODE CGK
CG5 marking
C325
marking CGK
sn74lvc1g32dry2
SCES219R
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Untitled
Abstract: No abstract text available
Text: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.
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AIC1896
AIC1896
200mA
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C32F
Abstract: No abstract text available
Text: SN74LVC1G32 www.ti.com SCES219Q – APRIL 1999 – REVISED JANUARY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation
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SN74LVC1G32
SCES219Q
24-mA
000-V
A114-A)
A115-A)
C32F
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PDF
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30255
Abstract: qSOT-23
Text: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching
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OCR Scan
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b3b72SS
BCW66F
BCW66G
BCW66H
b3b725S
30255
qSOT-23
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA
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OCR Scan
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bbS3T31
DD3Sfi62
PMBT5551
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PDF
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MMBTA05
Abstract: MMBTA06 MMBTA55 MMBTA56 marking K2H
Text: MMBTA55 / MMBTA56 TRANSYS ELECTRONICS PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fcl TOP VIEW
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OCR Scan
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MMBTA55
MMBTA56
MMBTA05
MMBTA06)
OT-23,
MIL-STD-202,
MMBTA56
OT-23
MMBTA06
marking K2H
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"Marking k2" mmic
Abstract: TLX-9-0150-CH
Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain
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OCR Scan
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950MHz
85GHz
Q68000-A8887
200MHz
"Marking k2" mmic
TLX-9-0150-CH
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Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B
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OCR Scan
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
Diodes Marking K7
Diodes Marking K6
sot23 marking m8
transistors marking 1p
BSS69
marking 1p sot23
Marking b4 SOT23
MARKING l7
MARKING K4
marking H6 sot 23
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Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OCR Scan
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OT-23
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BSS63
BSS64
Diodes Marking K6
BCX17
Diodes Marking K7
MARKING U1
marking A06
MARKING C4
Marking H2
S4 2A
S5 MARKING
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