A1s sot23
Abstract: BAW56S E6327 MARKING CODE A1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
A1s sot23
BAW56S E6327
MARKING CODE A1s
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3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
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Infineo866-95
B152-H8926-G2-X-7600
NB08-1069
3bs02
2bs01
08P06P
TDA 16888
ICE2pcs02
tda16846
ICE3B1565J
mosfet 18p06p
TDA4605
ICE3B0365J
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13006 TRANSISTOR
Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
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PMBFJ620
OT363
MSC895
13006 TRANSISTOR
transistor 13006
E 13006
13006
MCD217
PMBFJ620
FET MARKING
13006 D
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly
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lead519
B152-H9345-G2-X-7600
PX3544
PX7510
PX3560
ICE2AS01 equivalent
PX3540
Primarion PX3540
ice3br0665j
PRIMARION px3560
ice3br4765
ICE3BR1765J
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SGL0363Z
Abstract: trace code marking RFMD SGL-0363Z S218 device marking sgl IrL 1540 N DS091103 rfmd model marking code trace code marking RFMD SGL0363Z
Text: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for
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SGL-0363Z
2000MHz
OT-363
SGL-0363Z
200MHz
900MHz.
170-230MHz
SGL0363Z
trace code marking RFMD
S218
device marking sgl
IrL 1540 N
DS091103
rfmd model marking code
trace code marking RFMD SGL0363Z
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PMBFJ620,115
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken
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PMBFJ620
OT363
PMBFJ620,115
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k72 sot-23
Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS
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2N7002DW
OT-363
2N7002T
2SK3019
OT-523
2N7002KW
2N7002W
2SK3018
O-251
k72 sot-23
sot-23 Marking KN
72k SOT23
k72 r4
UM6K1
SI2302
SI2303
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Untitled
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling
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PMBFJ620
OT363
JESD625-A
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PMBFJ620
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken
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PMBFJ620
OT363
771-PMBFJ620-T/R
PMBFJ620
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74LVC2G06DW-7
Abstract: No abstract text available
Text: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V
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74LVC2G06
74LVC2G06
OT363
OT26/363
DS35161
74LVC2G06DW-7
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BC846AS
Abstract: BC856AS 220JL BC846AS-7
Text: BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • A Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Complementary PNP Type Available BC856AS
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BC846AS
BC856AS)
OT-363
DS30833
BC846AS
BC856AS
220JL
BC846AS-7
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Untitled
Abstract: No abstract text available
Text: BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. NEW PROD UCT T Features • • • • • Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Complementary PNP Type Available BC856AS
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BC846AS
BC856AS)
OT-363
DS30833
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Untitled
Abstract: No abstract text available
Text: BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR N EW PRODU CT Features • • • • • A Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Complementary PNP Type Available BC856AS Lead Free/RoHS Compliant (Note 1)
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BC846AS
BC856AS)
OT-363
DS30833
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IC 7410
Abstract: IC 7410 datasheet marking code cj cp741 CP341 NPN PNP sot-563 sot 123f Schottky diodes tvs SMC MARKING marking code 45W CPD76V
Text: Tiny Leadless Module Guide Central Semiconductor Corp. TLM Tiny Leadless Modules TLM Schottky Rectifiers Selection Guide TYPE NO. VRRM IF VF @ IF V MAX (A) MAX (V) MAX (A) 40 1.0 0.55 1.0 CTLSH1-40 trr †TYP. (ns) MAX CD †TYP. (pF) MAX CHIP PROCESS
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CTLSH1-40
CPD76V*
CTLSH2-40
CPD79*
CTLSH3-30
CPD77*
CTLSH5-40
CPD86*
CTLSH1-40M322
IC 7410
IC 7410 datasheet
marking code cj
cp741
CP341
NPN PNP sot-563
sot 123f Schottky diodes
tvs SMC MARKING
marking code 45W
CPD76V
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BAW56S
Abstract: A1s sot23 MARKING CODE SOT23 A1S BAW56 Marking a1s BAW56U BAW56W BCW66 BCW66H SC74
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAW56 BAW56W
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BAW56.
BAW56S
BAW56
BAW56W
BAW56S
BAW56U
A1s sot23
MARKING CODE SOT23 A1S
BAW56
Marking a1s
BAW56U
BAW56W
BCW66
BCW66H
SC74
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Untitled
Abstract: No abstract text available
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70
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BAV70.
BAV70S
BAV70
BAV70W
BAV70S
BAV70U
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marking code a4s
Abstract: SOt323 marking code 6X sot363 marking DATE code BAV70S BAV70U A4S - BAV70 BAV70 INFINEON diode a4s BAV70 BAV70W
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70
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BAV70.
BAV70S
BAV70
BAV70W
BAV70S
BAV70U
marking code a4s
SOt323 marking code 6X
sot363 marking DATE code
BAV70U
A4S - BAV70
BAV70 INFINEON
diode a4s
BAV70
BAV70W
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SOT23 BAW56
Abstract: BAW56
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAW56 BAW56W
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BAW56.
BAW56S
BAW56
BAW56W
BAW56S
BAW56U
SOT23 BAW56
BAW56
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MMS8050-L
Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.
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MJD31C
MJD32C
MJD42C
MMJD2955
MMJD3055
MMS8050-L
2SB1073R
Bd882
2SD667C
2SD667AC
2SD669AC
sot23-3 marking 63
zt5551
2SD468C
marking 2sd1664
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E6327
Abstract: marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3
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BAV70.
BAV70
BAV70F
BAV70L3
BAV70T
BAV70W
BAV70S
BAV70U
BAV70F*
E6327
marking code a4s
DIN 6784
SOt323 marking code 6X
BAV70F
BAV70L3
BAV70 E6327
BAV70T
BAV70U
SC74
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SOt323 marking code 6X
Abstract: BCR198 BCR198W
Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package
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BCR198.
BCR198S:
BCR198
BCR198W
BCR198S
EHA07183
EHA07173
BCR198S
SOt323 marking code 6X
BCR198W
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Untitled
Abstract: No abstract text available
Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package
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BCR198.
BCR198S:
BCR198
BCR198W
BCR198S
EHA07183
EHA07173
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INFINEON PART MARKING
Abstract: A4S 29
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70
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BAV70.
BAV70S
BAV70
BAV70W
BAV70U
BAV70U
INFINEON PART MARKING
A4S 29
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sot363a
Abstract: 3064 6pin BFM505 semiconductors bi 370 MAM210 NPN power transistor spice marking aded bi 370 transistor
Text: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Sm all size PIN SYMBOL • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low
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BFM505
OT363
OT363A
7110fl2b
OT363.
711Gfl2b
sot363a
3064 6pin
BFM505
semiconductors bi 370
MAM210
NPN power transistor spice
marking aded
bi 370 transistor
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