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    MARKING CODE 1I Search Results

    MARKING CODE 1I Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 1I Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    BF1009

    Abstract: 1009 Q62702-F1613
    Text: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1613 OT-143 Jul-29-1996 BF1009 1009 Q62702-F1613

    Q62702-F1487

    Abstract: BF1012
    Text: BF 1012 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 12V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1487 OT-143 Jul-29-1996 Q62702-F1487 BF1012

    Q62702-F1628

    Abstract: No abstract text available
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1009S Q62702-F1628 OT-143 Jul-29-1996 Q62702-F1628

    Q62702-F1498

    Abstract: No abstract text available
    Text: BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1498 OT-143 Jul-29-1996 Q62702-F1498

    Q62702-F1628

    Abstract: marking code g1s
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1009S 1009S Q62702-F1628 OT-143 200MHz Q62702-F1628 marking code g1s

    marking code g2s

    Abstract: marking code g1s 1012S Q62702-F1627 sot143 marking code G2
    Text: BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1012S 1012S Q62702-F1627 OT-143 200MHz marking code g2s marking code g1s Q62702-F1627 sot143 marking code G2

    Q62702-F1665

    Abstract: No abstract text available
    Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low-noise, high gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1005S Q62702-F1665 OT-143 Jul-29-1996 Q62702-F1665

    1012S

    Abstract: Q62702-F1627 BF1012S
    Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol


    Original     		PDF 1012S Q62702-F1627 OT-143 Jul-29-1996 1012S Q62702-F1627 BF1012S

    marking code g1s

    Abstract: Q62702-F1665
    Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1005S 1005S Q62702-F1665 OT-143 200MHz marking code g1s Q62702-F1665

    marking code g1s

    Abstract: Q62702-F1498
    Text: BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF Q62702-F1498 OT-143 200MHz marking code g1s

    marking code ER sot 143

    Abstract: No abstract text available
    Text: Silicon N Channel MOSFET-Tetrode BF 994 S 0 For VHF applications, especially for input and mixer stages with wide tuning range, e.g. in CATV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 994 S MG


    OCR Scan     		PDF Q62702-F963 Q62702-F1020 marking code ER sot 143

    BF996

    Abstract: 393bf BF996S
    Text: Silicon N Channel MOSFET Tetrode • • • BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 996 S MH Q62702-F964 Q62702-F1021


    OCR Scan     		PDF Q62702-F964 Q62702-F1021 BF996 393bf BF996S

    Untitled

    Abstract: No abstract text available
    Text: f w > ' $ - O c! Silicon Switching Diode Array _ 32E D • B A S 28 Ô23b320 GQlbSDb G « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching • Electrically Isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape


    OCR Scan     		PDF 23b320 Q62702-A163 Q62702-A77 T-03-09 23b320

    Hall effect 215 DB

    Abstract: HAL401
    Text: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology PRELIMINARY DATASHEET Marking Code Type Release Notes: Revision bars indicate significant changes to the previous edition. Temperature Range III!!!!!! iiiiiiiiii c HAL400SO 400A 400E 400C HAL401SO


    OCR Scan     		PDF HAL400, HAL401 HAL400SO HAL401SO HAL400 HAL401 Hall effect 215 DB

    marking aj

    Abstract: No abstract text available
    Text: Aj_r\ c. /// /// IOND/ PRINT RM SEP.03,1998 m :///////// ISSUED MARKING P/N /(REVERSE SIDE) 1i -3.4 CONTACT DETAIL DATE CODE CD NOTE LO 1. CONTACT PLATING GOLD(0.2 miti MIN.)ON MATING AREA, TIN/LEAD ON TERMINATION AREA, ALL OVER NICKEL UNDERPLATED. 2. MATING CONNECTOR


    OCR Scan     		PDF PCS-96FD1 S-34FD PCS--34FD1 marking aj

    Untitled

    Abstract: No abstract text available
    Text: ERC91 - 2 3 . A : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER ! Features • 1IfcVF • S Low V f tf : Marking il 5 - 3 - K & Color code Silver Super high speed switching. • « » f lM W * $ Abridged type name High reliability by planer design.


    OCR Scan     		PDF ERC91 Cl95t/R89

    Bi 3101 A

    Abstract: transistor ITT 108 MMBT3904
    Text: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g


    OCR Scan     		PDF MMBT3906 MMBT3904 OT-23 Bi 3101 A transistor ITT 108

    Silicon N Channel MOSFET Tetrode

    Abstract: No abstract text available
    Text: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1613 OT-143 800MHz Silicon N Channel MOSFET Tetrode

    DB1-822

    Abstract: BF1012
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627


    OCR Scan     		PDF BF1012S 1012S Q62702-F1627 OT-143 800MHz 1012S DB1-822 BF1012

    14 MARKING

    Abstract: br 1807
    Text: SIEMENS NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 • High DC current gain • High collector current • Collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 13 SMBTA 14 s1M s1N


    OCR Scan     		PDF Q68000-A6475 Q68000-A6476 OT-23 14 MARKING br 1807

    SOT23 KJA

    Abstract: No abstract text available
    Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type


    OCR Scan     		PDF 47kft) Q62702-C2257 OT-23 Resistan200 SOT23 KJA

    marking E7B

    Abstract: No abstract text available
    Text: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol


    OCR Scan     		PDF BAW56 Q62702-A688 OT-23 02BSb05 23StOS 01S048M 235b05 marking E7B

    c33725

    Abstract: c33740 Bc337
    Text: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1


    OCR Scan     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 BC337 A235b05 c33725 c33740 Bc337