x050
Abstract: MIL-PRF-123
Text: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M - HB Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Class Packaging N B X Y COG/NP0 X7R BX Y5V Ultra Stable Stable MIL General Purpose
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Tin/10
11-08-PC
x050
MIL-PRF-123
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x050
Abstract: MIL-PRF-123 COG 5,4 PF b 1.02 k 1 k v capacitor
Text: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M - HB Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Class Packaging N B X Y COG/NP0 X7R BX Y5V Ultra Stable Stable MIL General Purpose
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High-Rel00
11-08-PC
x050
MIL-PRF-123
COG 5,4 PF
b 1.02 k 1 k v capacitor
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mil spec capacitor catalog
Abstract: No abstract text available
Text: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 823 J 101 N X050 H T M Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Packaging Class T= Tape and Reel W = Waffle Pack None = Bulk N B X Y COG/NP0 X7R
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MARKING EU
Abstract: 1200MA 250 uH coil choke
Text: Inductors FERRITE CORE COMMON MODE CHOKE COIL SLF IDENTIFICATION MARKING All these products have Pb-free terminations and meet EU-RoHS and China-RoHS requirements Black, 3 digits and marking dot TYPE DESIGNATION HOW TO ORDER 0905 T TEB 102 Y PRODUCT CODE
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D-25578
MARKING EU
1200MA
250 uH coil choke
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SMD DIODE 517
Abstract: crank sensor HAL621 marking code 4e SMD MARKING CODE TRANSISTOR 501 HAL629 HAL629UA-E SPGS0022-5-A3 Bipolar Static Induction Transistor
Text: MICRONAS Edition Feb. 5, 2001 6251-109-4E 6251-504-2DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts
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6251-109-4E
6251-504-2DS
HAL621,
HAL629
HAL62x
12this
SMD DIODE 517
crank sensor
HAL621
marking code 4e
SMD MARKING CODE TRANSISTOR 501
HAL629
HAL629UA-E
SPGS0022-5-A3
Bipolar Static Induction Transistor
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6251-465-4DS
Abstract: 525k hall SMD marking codes Hall sensors
Text: MICRONAS Edition Aug. 8, 2002 6251-465-4DS HAL525, HAL535 Hall Effect Sensor Family MICRONAS HAL525, HAL535 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts
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HAL525,
HAL535
6251-465-4DS
HAL535
6251-465-4DS
525k hall
SMD marking codes Hall sensors
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unipolar transistor magnetic sensor
Abstract: 542k HAL542UA-K HAL543 HAL548 HAL542 HAL546
Text: DATA SHEET MICRONAS Edition Nov. 27, 2002 6251-605-1DS HAL54x Hall Effect Sensor Family MICRONAS HAL54x DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts
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6251-605-1DS
HAL54x
unipolar transistor magnetic sensor
542k
HAL542UA-K
HAL543
HAL548
HAL542
HAL546
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Untitled
Abstract: No abstract text available
Text: SMD Series Gas Tube Arresters 1. Part Number Code UTC – 3216 – XXX N 1 (2) (3) (4) (1) Band Name . (2) Series Code . (3) DC breakdown voltage (e.g.200V,400V) (4) Tolerance of DC breakdown voltage: N (±30%) 2. Marking 3. Outline Drawing Unit:mm 1.60.2
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10Times
300Times
15typ.
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2r2 6r8 COIL
Abstract: No abstract text available
Text: INDUCTORS TECHNOLOGY OF TOMORROW FERRITE CORE POWER CHOKE COIL LPS W NE IDENTIFICATION TYPE COATING COLOR MARKING LPS None None TYPE DESIGNATION HOW TO ORDER LPS 5728 PRODUCT CODE SIZE C TE 100 M TERMINATION SURFACE MATERIAL TAPING* NOMINAL INDUCTANCE INDUCTANCE
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marking code p60 SMD
Abstract: TSD023-729WS TSD054W TSD0341 TSD023-54WU TSD033-103WS SMD MARKING CODE S7 A70 SMD Marking "s3" Schottky barrier SMD MARKING CODE s4
Text: Schottky Barrier Diodes Two Terminals Part No. TSD013-730F3 Marking Code Max. Average Rectified Current lo(AV) (mA) Q Peak Repetitive Reverse Voltage SMD Schottky Max. Forward Voltage @ IF Max. Reverse Current @ VR R TSD013-730WU TSD013L-720WU TSD023-54WU
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TSD013-730F3
BAS85
LL5711
LL6263
LL103C
LL103B
LL103A
LL101C
LL101B
LL101A
marking code p60 SMD
TSD023-729WS
TSD054W
TSD0341
TSD023-54WU
TSD033-103WS
SMD MARKING CODE S7
A70 SMD
Marking "s3" Schottky barrier
SMD MARKING CODE s4
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mkp a 001 44 05
Abstract: No abstract text available
Text: MKP 335 5 X2 Vishay BCcomponents Interference suppression Film Capacitors MKP Radial Potted Type 168x12 halfpage l MARKING w C-value; tolerance; rated voltage; sub-class; manufacturer’s type designation; code for dielectric material; manufacturer e3 location; manufacturer’s emblem; year and week
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168x12
CSA-C22
UL1414
08-Apr-05
mkp a 001 44 05
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2222 335
Abstract: enec MKP 10
Text: MKP 335 5 X2 Vishay BCcomponents Interference suppression Film Capacitors MKP Radial Potted Type 168x12 halfpage l MARKING w C-value; tolerance; rated voltage; sub-class; manufacturer’s type designation; code for dielectric material; manufacturer e3 location; manufacturer’s emblem; year and week
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168x12
CSA-C22
UL1414
E112471
LR94054-16)
55/100/56/B
CQC02001001482
CQC03001004371
2222 335
enec MKP 10
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Untitled
Abstract: No abstract text available
Text: MKP 335 5 X2 Vishay BCcomponents Interference suppression Film Capacitors MKP Radial Potted Type 168x12 halfpage l MARKING w C-value; tolerance; rated voltage; sub-class; manufacturer’s type designation; code for dielectric material; manufacturer e3 location; manufacturer’s emblem; year and week
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168x12
CSA-C22
UL1414
E112471
LR94054-16)
55/100/56/B
CQC02001001482
CQC03001004371
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ut 406 hall
Abstract: HAL800 can calibration protocol
Text: ADVANCE INFORMATION HAL800 Programmable Linear Hall Effect Sensor MICRONAS Edition Aug. 24, 1998 6251-441-1AI HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Major Applications Features Marking Code
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HAL800
6251-441-1AI
ut 406 hall
can calibration protocol
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Untitled
Abstract: No abstract text available
Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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HAL114,
HAL115
6251-456-2DS
HAL11x
HAL114
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Hall effect 215 DB
Abstract: HAL401
Text: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology PRELIMINARY DATASHEET Marking Code Type Release Notes: Revision bars indicate significant changes to the previous edition. Temperature Range III!!!!!! iiiiiiiiii c HAL400SO 400A 400E 400C HAL401SO
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HAL400,
HAL401
HAL400SO
HAL401SO
HAL400
HAL401
Hall effect 215 DB
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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OCR Scan
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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HAL628
Abstract: 004-G intermetall 638UA
Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
638UA,
HAL638S
4083ion
HAL628
004-G
intermetall
638UA
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Variable.Capacitance Diode B B 112 • For AM tuning applications • Specified tuning range 1 . .,8 .0 V Type Marking Ordering Code BB 112 — Q62702-B240 Pin Configuration i ^ i - 03 Package1 TO-92 1 O- ^
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OCR Scan
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Q62702-B240
EHA07002
fiE35bD5
235b05
S35b05
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Untitled
Abstract: No abstract text available
Text: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. PRELIMINARY DATASHEET Marking Code Temperature Range Type A E C HAL400SO 400A 400E 400C HAL401 SO 401A 401 E
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OCR Scan
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PDF
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HAL400,
HAL401
HAL400SO
HAL401
HAL400
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION HAL 800 Programmable Linear Hall Effect Sensor r MICRO NAS Edition Aug. 24, 1998 6251-441-1 Al INTERMETALL HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code
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diode code ae 89A
Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.
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6251-345-4PD
HAL300
diode code ae 89A
diode AE 89A
377 hall sensor
ITT INTERMETALL
ITT semiconductors
ITT 30 15 an 220
diode ITT specification
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marking code 7G sot-143
Abstract: No abstract text available
Text: SIEMENS BF 997 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type Marking Ordering Code tape and reel BF 997
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Q62702-F1055
OT-143
fl23Sb05
00bbT12
ENM0702I
fl23SbOS
marking code 7G sot-143
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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OCR Scan
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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