marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
|
Original
|
HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
|
PDF
|
STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
|
Original
|
OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
|
PDF
|
1pw diode
Abstract: Hitachi DSA002753
Text: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C Z 4th.Edition. June 1999 Features • • • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Small package (CMPAK)
|
Original
|
2SK3289
ADE-208-743C
2SK3289
1pw diode
Hitachi DSA002753
|
PDF
|
Hitachi 2SJ
Abstract: Hitachi DSA002752
Text: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • • • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (CMPAK)
|
Original
|
2SJ576
ADE-208-741B
2SJ576
Hitachi 2SJ
Hitachi DSA002752
|
PDF
|
2SK3288
Abstract: 2SK3378 DSA003644
Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =2.7 typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK)
|
Original
|
2SK3378
ADE-208-805
2SK3288
2SK3378
DSA003644
|
PDF
|
2SJ575
Abstract: 2SJ576 marking code diode CMPAK Hitachi 2SJ DSA003643
Text: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)
|
Original
|
2SJ576
ADE-208-741B
2SJ575
2SJ576
marking code diode CMPAK
Hitachi 2SJ
DSA003643
|
PDF
|
2SK3288
Abstract: 2SK3378 Hitachi DSA00384 DSA0038471
Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =2.7 Ω typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK)
|
Original
|
2SK3378
ADE-208-805
2SK3288
2SK3378
Hitachi DSA00384
DSA0038471
|
PDF
|
2SJ575
Abstract: 2SJ576 Hitachi 2SJ Hitachi DSA00397
Text: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)
|
Original
|
2SJ576
ADE-208-741B
2SJ575
2SJ576
Hitachi 2SJ
Hitachi DSA00397
|
PDF
|
2SK3287
Abstract: 2SK3289 DSA003721 DA300
Text: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C Z 4th.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (CMPAK)
|
Original
|
2SK3289
ADE-208-743C
2SK3287
2SK3289
DSA003721
DA300
|
PDF
|
Hitachi DSA002753
Abstract: No abstract text available
Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS =2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) 4 V gate drive device. Small package (CMPAK)
|
Original
|
2SK3378
ADE-208-805
2SK3378
Hitachi DSA002753
|
PDF
|
cmpak6
Abstract: SMD MARKING RFC 1SV70 TBB1010 TBB1010KMTL-E
Text: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0500 Rev.5.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2 Suitable for World Standard Tuner RF amplifier.
|
Original
|
TBB1010
REJ03G0844-0500
PTSP0006JA-A
TBB1010
cmpak6
SMD MARKING RFC
1SV70
TBB1010KMTL-E
|
PDF
|
ADE-208-1607B
Abstract: 1607B 1SV70 TBB1010 TBB1010KMTL-E
Text: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0400 Previous ADE-208-1607B Rev.4.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2
|
Original
|
TBB1010
REJ03G0844-0400
ADE-208-1607B)
PTSP0006JA-A
TBB1010
ADE-208-1607B
1607B
1SV70
TBB1010KMTL-E
|
PDF
|
Hitachi DSA002753
Abstract: No abstract text available
Text: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) 2.5 V gate drive device. Small package (CMPAK)
|
Original
|
2SK3348
ADE-208-772
2SK3348
Hitachi DSA002753
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
|
Original
|
TBB1010
R07DS0316EJ0600
REJ03G0844-0500)
PTSP0006JA-A
TBB1010
|
PDF
|
|
|
MOS TECHNOLOGY INC
Abstract: 1SV70 TBB1004 TBB1004DMTL-E
Text: TBB1004 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0842-1100 Rev.11.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
|
Original
|
TBB1004
REJ03G0842-1100
200pF,
PTSP0006JA-A
TBB1004
MOS TECHNOLOGY INC
1SV70
TBB1004DMTL-E
|
PDF
|
1SV70
Abstract: TBB1005 TBB1005EMTL-E
Text: TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
|
Original
|
TBB1005
REJ03G0843-0900
PTSP0006JA-A
TBB1005
1SV70
TBB1005EMTL-E
|
PDF
|
smd code marking BM
Abstract: RG 56 smd diode marking BM 1SV70 TBB1002 TBB1002BMTL-E
Text: TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
|
Original
|
TBB1002
REJ03G0841-0900
PTSP0006JA-A
TBB1002
smd code marking BM
RG 56
smd diode marking BM
1SV70
TBB1002BMTL-E
|
PDF
|
2SJ586
Abstract: Hitachi 2SJ Hitachi DSA00396
Text: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)
|
Original
|
2SJ586
ADE-208-771A
2SJ586
Hitachi 2SJ
Hitachi DSA00396
|
PDF
|
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
|
Original
|
HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
|
PDF
|
Hitachi 2SJ
Abstract: Hitachi DSA002752
Text: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 4.1 Ω typ. (VGS = -4 V , ID = -50 mA) RDS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) 2.5 V gate drive device. Small package (CMPAK)
|
Original
|
2SJ586
ADE-208-771A
2SJ586
Hitachi 2SJ
Hitachi DSA002752
|
PDF
|
1SV70
Abstract: MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076 TBB1001
Text: TBB1001 Twin Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-986E Z 6th. Edition Dec. 2000 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
|
Original
|
TBB1001
ADE-208-986E
200pF,
TBB1001
1SV70
MARKING CODE SMD IC g1
cmpak6
SMD MARKING CODE hitachi
HITACHI RF EDITION
cmpak6 marking
Hitachi DSA0076
|
PDF
|
2SJ586
Abstract: Hitachi 2SJ DSA003643
Text: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)
|
Original
|
2SJ586
ADE-208-771A
2SJ586
Hitachi 2SJ
DSA003643
|
PDF
|
2SK3348
Abstract: DSA003643
Text: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 1.6 typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 typ. (VGS = 2.5 V , I D = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)
|
Original
|
2SK3348
ADE-208-772
2SK3348
DSA003643
|
PDF
|
PF0131
Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Text: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231
|
OCR Scan
|
PF0031
PF0032
PF0120
PF0121
PF0130
PF0131
PF0210
PF0040
PF0042
PF0026
PF0141
PF0144
PF0145
PF0148
PFS 3000
PF0310A
PF0049A
PF0147
|
PDF
|
