Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3117 NPN SILICON TRANSISTOR TO-18CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage UNITS SYMBOL ^CBO ^ Collector-Emitter Voltage VCEO
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2N3117
O-18CASE
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marking code SS SOT23
Abstract: marking code SS SOT23 transistor
Text: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits
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3STR1630
OT-23
OT-23
marking code SS SOT23
marking code SS SOT23 transistor
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J148
Abstract: MJD148T4 NPN Silicon Power Transistor DPAK
Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
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MJD148
J148
MJD148T4
NPN Silicon Power Transistor DPAK
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Z84C00
Abstract: Z84C20 Z84C30 Z84C90 Z80 KIO SY86 SY97
Text: Z84C90 KIO Serial/Parallel Counter Timer Product Specification 36 =L/2* :RUOGZLGH +HDGTXDUWHUV +DPLOWRQ $YHQXH &DPSEHOO &$ 7HOHSKRQH D[ KWWS ZZZ=L/2*FRP This publication is subject to replacement by a later edition. To determine whether a later edition exists, or
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Z84C90
Z84C00
Z84C20
Z84C30
Z84C90
Z80 KIO
SY86
SY97
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Untitled
Abstract: No abstract text available
Text: HCF4013 Dual D-type flip-flop Datasheet - production data Applications • Automotive • Industrial PDIP14 • Computer SO14 • Consumer Description Features • Set-reset capability • Static flip-flop operation - retains state indefinitely with clock level either “high” or “low”
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HCF4013
PDIP14
HCF4013
DocID2023
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HCF4013BE
Abstract: No abstract text available
Text: HCF4013 Dual D-type flip-flop Datasheet - production data Applications • Automotive • Industrial PDIP-14 • Computer SO-14 • Consumer Description Features • Set-reset capability • Static flip-flop operation - retains state indefinitely with clock level either “high” or “low”
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HCF4013
PDIP-14
SO-14
HCF4013
DocID2023
HCF4013BE
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HCF4013BE equivalent
Abstract: HCF4013BE HCF4013Y HCF4013BEY HCF4013 DUAL FLIPFLOP STMicroelectronics marking code date so-14 HCF4013
Text: HCF4013 Dual D-type flip-flop Datasheet − production data Features • Set-reset capability ■ Static flip-flop operation - retains state indefinitely with clock level either “high” or “low” ■ Medium speed operation 16 MHz typ. , clock toggle rate at 10 V
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HCF4013
PDIP-14
SO-14
HCF4013
SO-14
HCF4013BE equivalent
HCF4013BE
HCF4013Y
HCF4013BEY
HCF4013 DUAL FLIPFLOP
STMicroelectronics marking code date so-14
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MJD148
Abstract: No abstract text available
Text: MJD148 Preferred Device NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • http://onsemi.com
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MJD148
r14525
MJD148/D
MJD148
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HCF4051
Abstract: No abstract text available
Text: HCF4051 Single 8-channel analog multiplexer/demultiplexer Datasheet - production data • Input leakage current II = 100 nA max. at VDD = 18 V, TA = 25 °C • 100 % tested for quiescent current 3',3 Applications 62 • Automotive Features • Industrial
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HCF4051
DocID2053
HCF4051
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j148g
Abstract: No abstract text available
Text: MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A Low Saturation Voltage − 0.5 V @ IC = 2.0 A
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MJD148,
NJVMJD148T4G
AEC-Q101
MJD148/D
j148g
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J148
Abstract: j148g NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G
Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
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MJD148
MJD148/D
J148
j148g
NPN Silicon Power Transistor DPAK
MJD148
MJD148T4
MJD148T4G
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j148g
Abstract: No abstract text available
Text: MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • • • • • • High Gain Low Saturation Voltage High Current Gain − Bandwidth Product
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MJD148,
NJVMJD148T4G
AEC-Q101
MJD148/D
j148g
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Untitled
Abstract: No abstract text available
Text: MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A Low Saturation Voltage − 0.5 V @ IC = 2.0 A
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MJD148,
NJVMJD148T4G
MJD148/D
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bc639
Abstract: BC63x BC639-16ZL1 BC637
Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637
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BC635,
BC637,
BC639,
BC639-16
BC635
BC637
BC639
BC63x
BC639-16ZL1
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J148
Abstract: MJD148 MJD148T4
Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
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MJD148
MJD148/D
J148
MJD148
MJD148T4
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J148G
Abstract: j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor
Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A
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MJD148
MJD148/D
J148G
j148
NPN Silicon Power Transistor DPAK
MJD148
MJD148T4
MJD148T4G
MS10
marking code QV transistor
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2N5192G
Abstract: No abstract text available
Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS
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2N5190G,
2N5191G,
2N5192G
2N5194,
2N5195.
2N5190G
2N5191G
2N5192G
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Untitled
Abstract: No abstract text available
Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features 4.0 AMPERES NPN SILICON POWER TRANSISTORS
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2N5190,
2N5191,
2N5192
2N5194,
2N5195.
2N5190
2N5191
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2N5192G
Abstract: 2N5190 2N5190G 2N5190..92 pin details of 2N5190 2N5191 2N5191G 2N5192 2N5194 2N5195
Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V
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2N5190,
2N5191,
2N5192
2N5194,
2N5195.
2N5190
2N5191
2N5192G
2N5190
2N5190G
2N5190..92
pin details of 2N5190
2N5191
2N5191G
2N5192
2N5194
2N5195
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Untitled
Abstract: No abstract text available
Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V
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2N5190,
2N5191,
2N5192
2N5194,
2N5195.
2N5190
2N5191
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Untitled
Abstract: No abstract text available
Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS
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2N5190G,
2N5191G,
2N5192G
2N5194,
2N5195.
2N5190G
2N5191G
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PDF
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HCF4069UBE
Abstract: HCF4069YUM013TR hcf4049 HCF4069Y
Text: HCF4069U Hex inverter Datasheet - production data Applications • Automotive • Industrial • Computer PDIP-14 SO-14 • Consumer Description Features • Medium-speed operation tPD = 30 ns typ. at 10 V • Standardized symmetrical output characteristics
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HCF4069U
PDIP-14
SO-14
SO-14
HCF4069U
HCF4069Y
HCF4069UBE
HCF4069UBE
HCF4069YUM013TR
hcf4049
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marking code vl
Abstract: MARKING CODE G10 MARKING a10 MARKING 113Z transistor marking ra
Text: UMA10N / FMA10A / IMB7A UMG10N Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I UMA10N / FMA10A / IMB17A •Features •A b s o lu te maximum ratings (Ta=25t;} 1 ) Two DTA113Z transistors are housed in a UM T or SM T package.
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UMA10N
FMA10A
UMG10N
IMB17A
DTA113Z
FMA10A,
IMB17A
marking code vl
MARKING CODE G10
MARKING a10
MARKING 113Z
transistor marking ra
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Untitled
Abstract: No abstract text available
Text: Central" CMXT3946 Semiconductor Corp. SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3946 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur
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CMXT3946
OT-26
192/C
06-January
OT-26
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