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    MARKING CODE SE TRANSISTORS Search Results

    MARKING CODE SE TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE SE TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219G • Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2002/95/EC) 2SD1820G 2SB1219G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB1219A 2SD1820A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB1219 2SD1820

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1218G • Package • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD1819G 2SB1218G

    Untitled

    Abstract: No abstract text available
    Text: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2011/65/EU directives


    Original     		PDF BC846AW BC850CW 100mA 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC846AW BC847AW BC848AW

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD0602 • Features ■ Package • Large collector current IC


    Original     		PDF 2002/95/EC) 2SB0710 2SD0602

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820 Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SD1820 2SB1219

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Package • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1218G 2SD1819G

    IC DATE CODE

    Abstract: IC marking TY
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SD1820A 2SB1219A IC DATE CODE IC marking TY

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G • Package • Large collector current IC • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.


    Original     		PDF 2002/95/EC) 2SB1219G 2SD1820G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AAG Silicon PNP epitaxial planar type For digital circuits • Package  Optimum for high-density mounting and downsizing of the equipment  Contribute to low power consumption


    Original     		PDF 2002/95/EC) UNR91AAG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A • Package  Low collector-emitter saturation voltage VCE(sat)  Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SD0602A 2SB0710A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD2216 2SB1462

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602A • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB0710A 2SD0602A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB0956G 2SD1280G

    transistor 6aw

    Abstract: No abstract text available
    Text: BC846AW-AU ~ BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949


    Original     		PDF BC846AW-AU BC850CW-AU 100mA TS16949 AECQ101 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC846AW-AU transistor 6aw

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y


    Original     		PDF 2002/95/EC) 2SD2216G 2SB1462G

    7aw transistor

    Abstract: No abstract text available
    Text: BC846AW-AU ~ BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqire quality system certificate : TS16949


    Original     		PDF BC846AW-AU BC850CW-AU 100mA TS16949 AEC-Q101 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC846AW-AU 7aw transistor

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SA1531G • Package • Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SC3929G 2SA1531G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC3932G

    f747

    Abstract: No abstract text available
    Text: NPN Silicon High-Voltage Transistors • • • • BFN24 BFN26 Suitable fo r video o u tp u t stages in TV sets and sw itch in g pow er supplies High breakdow n voltage Low co lle c to r-e m itte r saturation voltage C om plem entary typ e s: BFN 25, BFN 27 PNP


    OCR Scan     		PDF BFN24 BFN26 62702-F747 62702-F750 Q62702-F1065 Q62702-F976 f747

    transistor Bc 542

    Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
    Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


    OCR Scan     		PDF 33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A

    2GM H transistor

    Abstract: 2GM TRANSISTOR transistor marking SA p sot-23
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 Ì3.1Ì .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the NPN


    OCR Scan     		PDF MMBTA56 OT-23 MMBTA06 MPSA56. OT-23 2GM H transistor 2GM TRANSISTOR transistor marking SA p sot-23