bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
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OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
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transistor DV3
Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.
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2SD596
2SB624
200TYP.
100mA)
OT-23
BL/SSSTC024
transistor DV3
transistor dv4
2SD596
DV4 sot23
2SD596 dv3
marking DV4
marking DV5
marking code DV3
transistor DV1
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.7 A ICM: Collector-base voltage
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OT-23
2SD596
OT-23
100mA
700mA
700mA,
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transistor dv4
Abstract: 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SD596
OT-23
2SB624
100mA
700mA
700mA,
10MHZ
transistor dv4
2SB624
DV4 sot23
10MHZ
2SD596
marking DV5
marking DV4
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transistor dv4
Abstract: marking DV4 2SD596 2SD596 dv3
Text: 2SD596 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.7 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. 92¡ À0. 05
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2SD596
OT-23-3L
100mA
700mA
transistor dv4
marking DV4
2SD596
2SD596 dv3
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7
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OT-23-3L
2SD596
OT-23-3L
100mA
700mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SD596
OT-23
2SB624
100mA
700mA
700mA,
10MHZ
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transistor dv4
Abstract: transistor DV3 2SD596 DV4 sot23
Text: 2SD596 SOT-23 Transistor NPN SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
2SD596
OT-23
100mA)
2SB624
700mA
700mA,
10MHZ
100mA
transistor dv4
transistor DV3
2SD596
DV4 sot23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SD596
OT-23
100mA)
2SB624
100mA
700mA
700mA,
10MHZ
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transistor dv4
Abstract: 2SD596 10MHZ 2SB624
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SD596
OT-23-3L
100mA)
2SB624
100mA
700mA
700mA,
10MHZ
transistor dv4
2SD596
10MHZ
2SB624
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transistor dv4
Abstract: transistor DV3 2SD596 SOT23-3L
Text: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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2SD596
OT-23-3L
OT-23-3L
100mA)
2SB624
700mA
700mA,
10MHZ
100mA
transistor dv4
transistor DV3
2SD596
SOT23-3L
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TSXCUSB485
Abstract: allen bradley IEC 60947-5-1 xbtz9780 xbtz9980 modicon tsx NANO XBTGT TSX NANO CABLE xbt n200 xbtz925 Communication cables pin diagram XVMB1RAGS
Text: Operator dialog 1 Harmony Optimise the creation of your dialogue solutions! 2 Unequalled and of high quality, it is the largest offer on the market. 3 p Simplicity: the clip together components ensure simple and secure assembly. p Ingenuity: LED technology for all
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TSXETG1000
TSXETG1010
TSXETG3000
TSXETG3010
TSXETG3021
TSXETG3022
TSXCUSB485
allen bradley IEC 60947-5-1
xbtz9780
xbtz9980
modicon tsx NANO
XBTGT
TSX NANO CABLE
xbt n200
xbtz925 Communication cables pin diagram
XVMB1RAGS
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2SD596
Abstract: transistor dv4 2SB624
Text: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA
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2SD596
OT-23
2SB624
100mA)
200mA
2SD596
transistor dv4
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2SD596 dv3
Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
Text: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA
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2SD596
OT-23
2SB624
100mA)
200mA
2SD596 dv3
marking DV4
2SD596
2sd59
transistor dv4
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2SD596A
Abstract: transistor DV3 D1788 2SB624
Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
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2SD596A
2SB624
2SD596A
transistor DV3
D1788
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Untitled
Abstract: No abstract text available
Text: TLV5580 8ĆBIT, 80 MSPS LOWĆPOWER A/D CONVERTER www.ti.com SLAS205B − DECEMBER 1998 − REVISED OCTOBER 2003 D 8-Bit Resolution 80 MSPS Sampling DW OR PW PACKAGE TOP VIEW Analog-to-Digital Converter (ADC) D Low Power Consumption: 165 mW Typ Using External references
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TLV5580
SLAS205B
28-Pin
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Untitled
Abstract: No abstract text available
Text: Identification Identification Products Identification Foam Nameplate Labels 2 www.Hellermann.Tyton.com | 800.537.1512 Identification Foam Nameplate Labels Identification Products Table of Contents TagPrint Pro 3.0 Software. 4
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LITPD252
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Untitled
Abstract: No abstract text available
Text: HellermannTyton HellermannTyton is a leading, global manufacturer of systems and solutions which help worldclass customers better manage and identify wire, cable, and components. HellermannTyton is proud to manufacture products in Milwaukee, Wisconsin, our
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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2SD596
Abstract: D1298 SSA250 transistor dv4
Text: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom mended for hybrid integrated circuit and other applications.
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2SD596
2SD596
D1298
SSA250
transistor dv4
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D 596
Abstract: No abstract text available
Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SD 596 ELECTRON DEVICE / AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD D E S C R IP TIO N PACKAG E D IM E N S IO N S The 2S D 596 is designed fo r use in small type equipm ents especially recom
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2SD596
2SB624
D 596
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transistor DV3
Abstract: 2sd 596 2sd59
Text: S IL IC O N T R A N S IS T O R 2SD596 A U D IO FREQ U ENCY PO W ER A M P L IF IE R N P N S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N PACKAGE DIMENSIONS The 2 S D 5 9 6 is designed for use in small type equipm ents especially recom
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2SD596
2SD596
transistor DV3
2sd 596
2sd59
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