sot143 sot343
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
BF2040R
BF2040W
OT143
OT343
BF2040,
BF2040W
sot143 sot343
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E6327
Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
E6327
DIN 6784
BF2040
BF2040R
BF2040W
BFP181
BGA420
sot143 marking code G2
p 1S marking SOT143
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BF2040
Abstract: BF2040R BF2040W sot143 sot343
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
BF2040
BF2040R
BF2040W
sot143 sot343
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p 1S marking SOT143
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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Original
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PDF
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BF2040.
BF2040
BF2040R
BF2040W
OT143
OT343
BF2040,
BF2040W
p 1S marking SOT143
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BF2040W
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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Original
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PDF
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
BF2040W
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mosfet marking code gg
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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Original
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PDF
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BF2040.
BF2040
BF2040R
BF2040W
OT143
OT143R
OT343
BF2040,
BF2040W
mosfet marking code gg
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BF2040
Abstract: BF2040R BF2040W 1V66
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
Feb-25-2004
BF2040
BF2040R
BF2040W
1V66
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BF1009
Abstract: 1009 Q62702-F1613
Text: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1613
OT-143
Jul-29-1996
BF1009
1009
Q62702-F1613
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Q62702-F1487
Abstract: BF1012
Text: BF 1012 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 12V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1487
OT-143
Jul-29-1996
Q62702-F1487
BF1012
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Q62702-F1498
Abstract: No abstract text available
Text: BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1498
OT-143
Jul-29-1996
Q62702-F1498
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Q62702-F1628
Abstract: No abstract text available
Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1009S
Q62702-F1628
OT-143
Jul-29-1996
Q62702-F1628
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Q62702-F1628
Abstract: marking code g1s
Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1009S
1009S
Q62702-F1628
OT-143
200MHz
Q62702-F1628
marking code g1s
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marking code g2s
Abstract: marking code g1s 1012S Q62702-F1627 sot143 marking code G2
Text: BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1012S
1012S
Q62702-F1627
OT-143
200MHz
marking code g2s
marking code g1s
Q62702-F1627
sot143 marking code G2
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Q62702-F1665
Abstract: No abstract text available
Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low-noise, high gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1005S
Q62702-F1665
OT-143
Jul-29-1996
Q62702-F1665
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1012S
Abstract: Q62702-F1627 BF1012S
Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol
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1012S
Q62702-F1627
OT-143
Jul-29-1996
1012S
Q62702-F1627
BF1012S
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Q62702-F1055
Abstract: Silicon N Channel MOSFET Tetrode
Text: Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners BF 997 Type Marking Ordering Code tape and reel Pin Configuration
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Q62702-F1055
OT-143
Q62702-F1055
Silicon N Channel MOSFET Tetrode
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marking code g1s
Abstract: Q62702-F1665
Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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1005S
1005S
Q62702-F1665
OT-143
200MHz
marking code g1s
Q62702-F1665
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1776
OT-343
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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OCR Scan
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PDF
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62702-F1774
T-343
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marking code g1s
Abstract: marking g1s marking G2s
Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1774
OT-343
marking code g1s
marking g1s
marking G2s
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SOT 343 MARKING BF
Abstract: 2SM10 marking code g1s
Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1776
OT-343
SOT 343 MARKING BF
2SM10
marking code g1s
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Silicon N Channel MOSFET Tetrode
Abstract: No abstract text available
Text: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1613
OT-143
800MHz
Silicon N Channel MOSFET Tetrode
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Untitled
Abstract: No abstract text available
Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code
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PDF
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flS3b32Q
BF994S
Q62702-F963
Q62702-F1020
T-31-25
23b320
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