G226
Abstract: marking A2 3216L G476 E686 G156 G336 0G106M g686 G335
Text: Tantalum Chip Capacitors SY Standard Ratings Rated voltage v 2.5V Rated Voltage : 2.5V Capacitance Marking EIA (µF)(120Hz) (P, A2, A) size Code Size symbol Series code Tangent of the loss angle (less)(120Hz,20℃) Leakage current (µA, or less) -55℃
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120Hz)
120Hz
100kHz)
3216L
-0E475M-RA2
-0E685M-RA2
-0E106M-RA2
-0G227M-RD0
G226
marking A2
3216L
G476
E686
G156
G336
0G106M
g686
G335
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v474
Abstract: v684 SYL-1A476M-RB sy 164 MARKing A106 marking v474 V105 MARKING CODE 1C106 a106 capacitor diode v684
Text: Tantalum Chip Capacitors SY Standard Ratings Rated voltage v 35 Rated Voltage : 35V Capacitance Marking EIA (µF)(120Hz) (P, A2, A) size Code Size symbol Series code Tangent of the loss angle (less)(120Hz,20℃) Leakage current (µA, or less) ESR (Ω) (less)
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120Hz)
120Hz
100kHz)
-1V104M-RA
-1V154M-RA
-1V224M-RA
2005/2006E
v474
v684
SYL-1A476M-RB
sy 164
MARKing A106
marking v474
V105 MARKING CODE
1C106
a106 capacitor
diode v684
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B41303-A3109-M
Abstract: B43303-D227-M b933 h337 B5159
Text: Snap-In Capacitors 85 °C B 41 303 B 43 303 GP grade For universal application Construction ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface
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F/400
B41303-A3109-M
B43303-D227-M
b933
h337
B5159
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d687
Abstract: h337 a7338 C2227 transistor D227 EPCOS 1400 09 O B568 L2227M B41303-A7338-M equivalent j8338
Text: Snap-In Capacitors B 41 303 85 °C B 43 303 B 41 303, B 43 303 GP grade For universal application Construction • Charge-discharge proof, polar ■ Aluminum case, fully insulated ■ Snap-in solder pins to hold component in place on PC-board ■ Minus pole marking on case surface
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G3361K
Abstract: No abstract text available
Text: SAW COMPONENTS Series/Type: G3361K The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product Date of Withdrawal B39389G3361K100 G3956M + G9353M 2008-01-18 Deadline Last Orders 2008-06-30 Last Shipments 2008-09-30
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G3361K
B39389G3361K100
G3956M
G9353M
DIP10K
D-81617
G3361K
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KIC73B24
Abstract: KIC73E27T2
Text: SEMICONDUCTOR KIC73A/B/C/D/E16~50T/T2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC73A/B/C/D/E*T/T2 Series This IC is a system reset IC built in delay time circuit. KIC73 series is not required with an external capacitor, and then can use a
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KIC73A/B/C/D/E16
50T/T2
KIC73A/B/C/D/E*
KIC73
240/50/100/200/400ms
VTH-100mV)
KIC73B24
KIC73E27T2
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G1966M SAW FILTER
Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Text: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation
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GH16D
Abstract: GH16C gh16b
Text: A Product Line of Diodes Incorporated AZ1117C LOW DROPOUT LINEAR REGULATOR Description Features The AZ1117C is a low dropout three-terminal regulator. • Current Limit: 1.35A Typ • Output Noise from 10Hz to 10KHz: 0.003% of VOUT • PSRR at IOUT = 300mA and f = 120Hz: 70dB
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AZ1117C
AZ1117C
10KHz:
300mA
120Hz:
DS36676
GH16D
GH16C
gh16b
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP2127 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR Description Features The AP2127 Series are positive voltage regulator ICs fabricated by • Wide Operating Voltage: 2.5V to 6V CMOS process. • High Output Voltage Accuracy: ±2%
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AP2127
300mA
AP2127
10kHz
170mV
140mV
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP2127 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR Description Features The AP2127 Series are positive voltage regulator ICs fabricated by • Wide Operating Voltage: 2.5V to 6V CMOS process. • High Output Voltage Accuracy: ±2%
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AP2127
300mA
AP2127
10kHz
170mV
140mV
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marking G33
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance Low Input Capacitance 95mΩ @ VGS = -4.5V 3.0A Fast Switching Speed 130mΩ @ VGS = -2.5V 2.5A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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DMG3413L
AEC-Q101
DS35051
marking G33
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Untitled
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A NEW PRODUCT -20V Low On-Resistance Low Input Capacitance
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DMG3413L
AEC-Q101
DS35051
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SY7-1A476M-RB
Abstract: SY6-1C106M-RA SY1-1V104M-RA SY1-1C105M-RA SY5-1A106M-RA Elna ce 105 SY4-1C106M-RB SY4-1E225M-RA elna RA2 SY5-1C476M-RC
Text: Specifications, Dimension Table TANTALUM CHIP CAPACITORS CHIPCON Specifications Item Performance Category temperature range (˚C) −55 to +125 (Above 85˚C use category voltage) Leakage current (µA) See standard ratings table Tolerance at rated capacitance (%)
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120Hz)
100kHz)
SY2-1V106M-RD0
SK2-1V106M-RD0
SY3-1V156M-RD0
SK3-1V156M-RD0
SY4-1V226M-RD0
SK4-1V226M-RD0
2004/2005E
SY7-1A476M-RB
SY6-1C106M-RA
SY1-1V104M-RA
SY1-1C105M-RA
SY5-1A106M-RA
Elna ce 105
SY4-1C106M-RB
SY4-1E225M-RA
elna RA2
SY5-1C476M-RC
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marking G28
Abstract: E213 E103 E105 E107 RS-186E spdt 3p Momentary rocker Switch
Text: C&K E Series Sealed Miniature Rocker and Lever Handle Switches Features/Benefits • Sealed against solder and cleaning Typical Applications • Telecommunications process contaminants • Instrumentation • ESD Resistance—all actuator options • Computers & peripherals
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432XXXXXX)
marking G28
E213
E103
E105
E107
RS-186E
spdt 3p Momentary rocker Switch
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Untitled
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3413L
DS35051
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marking g33
Abstract: DMG3413L g33 sot23
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3413L
AEC-Q101
DS35051
marking g33
DMG3413L
g33 sot23
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electrolytic capacitor a225
Abstract: SY5-1A106M-RA v684 SYF-1A106M-RP SY7-1A476M-RB V105 MARKING CODE SYL-1A476M-RB MARK A106 SY2-1A685M-RB capacitor J336
Text: Tantalum Chip Capacitors Type List for Tantalum Chip Capacitors Processed style Series designation Former Resin molded chip type SY1 SY2 SY3 SY4 SY5 SY6 SY7 SY8 SY9 SYF SYL Photograph A Features Standard Standard Standard B Standard C Miniaturized D0
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C5101-1,
2005/2006E
electrolytic capacitor a225
SY5-1A106M-RA
v684
SYF-1A106M-RP
SY7-1A476M-RB
V105 MARKING CODE
SYL-1A476M-RB
MARK A106
SY2-1A685M-RB
capacitor J336
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smd diode J476
Abstract: 10 35L W1 RJ3 Elna smd 3528 led strip elna cerafine 10 micro farad 25 v electrolytic capacitor Elna ce 85 smd C475 ST T4 3570 431 SY4
Text: Certifications of Quality Management System as of Jun. 2006 Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JP05/60268QA Aluminum electrolytic capacitors
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JP05/60268QA
MY04/0675T2
SG02/20012
100mA
5V100F)
2006/2007E
smd diode J476
10 35L W1
RJ3 Elna
smd 3528 led strip
elna cerafine
10 micro farad 25 v electrolytic capacitor
Elna ce 85
smd C475
ST T4 3570
431 SY4
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MG-350
Abstract: takamisawa RELAYS QMFZ2, Takamisawa JV takamisawa jv 24 takamisawa relay MW75C polyplastics 3316 SK665FR MW75
Text: File E56140 Vol. 13 Sec. 1 and Report Page 1 Issued: Revised: 06-17-97 11-05-99 D E S C R I P T I O N PRODUCT COVERED: Component - Magnetic Motor Controllers, Type JV, followed by one or two digits 3 through 48, may be followed by S, may be followed by G, followed by
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E56140
96SC13249
MG-350
takamisawa RELAYS
QMFZ2,
Takamisawa JV
takamisawa jv 24
takamisawa relay
MW75C
polyplastics 3316
SK665FR
MW75
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LT1817 transistor
Abstract: LT1815 LT1815CS5 LT1815IS5 marking G28 G28 SOT-23 g28 SOT23 marking g31 sot23 1817I LTNQ
Text: LT1815 LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 220MHz Gain-Bandwidth Product 1500V/µs Slew Rate 6.5mA Supply Current per Amplifier
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LT1815
LT1816/LT1817
220MHz,
220MHz
OT-23,
800nA
LT1395/LT1396/LT1397
400MHz
LT1806/LT1807
325MHz,
LT1817 transistor
LT1815
LT1815CS5
LT1815IS5
marking G28
G28 SOT-23
g28 SOT23
marking g31 sot23
1817I
LTNQ
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smd diode J476
Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
Text: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)
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1F/DZN-2R5D105T
ISO/TS9001
MY04/0675T2
003ristics
100mA
5V100F)
2007/2008E
smd diode J476
LP5 ELNA
diode sy 170/2
smd J476
RJ3 Elna
SYF-1A335M-RJ
ELNA RE2
DCK-3R3E224U-E
10 micro farad 25 v electrolytic capacitor
22 35L CAPacitor
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8070-1153-06ZNU6-6PY
Abstract: No abstract text available
Text: Series 804 Series 804 Push/Pull Mighty Mouse USB Cordset Hub 808-086 808-086 USB Cordset Hub The Mighty Mouse USB Cordset Hub regulates 5V USB power from a 16V source while providing power management. Features a dedicated battery port, 3 downstream USB receptacle ports, 1 downstream USB plug port and 1 host/
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MILSTD-130.
8070-1153-06ZNU6-6PY
807-216-01ZNU
807-216-01ZNU6-6SY
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Untitled
Abstract: No abstract text available
Text: B 41 303 B 43 303 Snap-in Capacitors GP Grade For universal applications Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface
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OCR Scan
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PDF
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kalo274-a
KAL0153-G
KAL0141-S
00/iiF
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S3V 05
Abstract: No abstract text available
Text: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3
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3SK240
S3V 05
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