KTA1298
Abstract: MARKING IY SOT sot-23 IY marking IY
Text: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KTA1298
OT-23
KTA1298
MARKING IY SOT
sot-23 IY
marking IY
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Q62702-F979
Abstract: BF599
Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter
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Q62702-F979
OT-23
Iy21e
Q62702-F979
BF599
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Untitled
Abstract: No abstract text available
Text: PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-220AB Package Outline Dimensions are shown in millimeters inches TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9@Ã &'( 6TT@H7G@9ÃPIÃXXÃ (Ã (& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å
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RFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
O-220AB
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SMAJ58C
Abstract: No abstract text available
Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 400 Watt Peak Power ■ Dimension Dim SMA DO-214AC ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 3.99 4.50 0.157 0.177 B 2.54 2.79 0.100
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DO-214AC)
SMAJ350A
SMAJ350CA
SMAJ400
SMAJ200
SMAJ200C
SMAJ210C
SMAJ220C
SMAJ250C
SMAJ300C
SMAJ58C
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PAR/AEC-Q100
Abstract: No abstract text available
Text: NCV70501 Micro-Stepping Motor Driver Introduction http://onsemi.com MARKING DIAGRAM SOIC−16 CASE 751B A WL Y WW G Features • • • • • • • • • • • • • • • • Dual H−Bridge for 2−Phase Stepper Motors Programmable Peak−Current Up to 300 mA
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NCV70501
NCV70501/D
PAR/AEC-Q100
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Fuji Electric SM
Abstract: No abstract text available
Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG811S06R
Fuji Electric SM
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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HAL628
Abstract: 004-G intermetall 638UA
Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
638UA,
HAL638S
4083ion
HAL628
004-G
intermetall
638UA
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Silicon N Channel MOSFET Tetrode
Abstract: No abstract text available
Text: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1613
OT-143
800MHz
Silicon N Channel MOSFET Tetrode
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170
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023b3BQ
001bS43
BAV170
Q62702-A920
T-01-09
23b32Ã
001b54b
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JWS100-24
Abstract: JWS300-12 JWS100-48 300w dc to ac inverter inverter circuit dc to ac 2V to 24V JWS150-5 JWS600-15 JWS75-24 EN55022-B IEC1000-4
Text: Higt; iifiality industriai power supplies Universal AC Input Lambda’s new JWS series meets the demands of today’s world wide industrial market with universal Radiated and Conducted EMI input, international agency approvals, and CE Marking. Reducing the risk of system failures the
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EN61000-4
JWS100-24
JWS300-12
JWS100-48
300w dc to ac inverter
inverter circuit dc to ac 2V to 24V
JWS150-5
JWS600-15
JWS75-24
EN55022-B
IEC1000-4
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diode code ae 89A
Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.
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6251-345-4PD
HAL300
diode code ae 89A
diode AE 89A
377 hall sensor
ITT INTERMETALL
ITT semiconductors
ITT 30 15 an 220
diode ITT specification
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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1640125
Abstract: No abstract text available
Text: LSAG72 ORANGE LOA672 YELLOW LYA672 GREEN LGA672 PURE GREEN LPA672 SIEMENS SUPER-RED High Current Super SIDELED lamp Dimensions in Inches mm .094 Cathode Marking \ T~ .149 (3.8) .134(3.4) .114 (2.9) FEATURES • SIDELED: surface mount LEO lamp • White package, colorless dear window
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LSAG72
LOA672
LYA672
LGA672
LPA672
GEX6860
100tlC
A672-LP
A672-N
A672-P
1640125
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marking code 8fn
Abstract: No abstract text available
Text: PNP Silicon High-Voltage Transistors BFN 37; BFN 39 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Complementary types: BFN 36/38 NPN Type Marking O rdering code (12-m m tape)
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Q62702-
F1304
F1305
OT-223
OT-223
marking code 8fn
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TME57
Abstract: marking code 1AW 27-D27 E221SD1CGE PT4E ic635
Text: Sealed* Snap-Acting Momentary Pushbutton Switches E020 Series •process sealed-withstands soldering and cleaning processes. SWITCHES WITH STANDARD OPTIONS C8K MARKING ON THIS SIDE EPOXY SEAL .030 TYP. 76 3 NC 2 NO “ 1 .1 8 5 TYP. T 4 , ?0) COMM. -^ .2 6 0 k (6,6 0)
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E121SD1CGE
E221SD1CGE
E221SD
V21-V61-V71-V81
TME57
marking code 1AW
27-D27
E221SD1CGE
PT4E
ic635
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marking code 1AW
Abstract: tme57 E221SD1CGE h032
Text: Sealed* Snap-Acting Momentary Pushbutton Switches E020 Series •process sealed-withstands soldering and cleaning processes. SWITCHES WITH STANDARD OPTIONS C8K MARKING ON THIS SIDE EPOXY SEAL .030 TYP. 76 3 NC 2 NO “ 1 .1 8 5 TYP. T 4 , ?0) COMM. -^ .2 6 0 k (6,6 0)
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E121SD1CGE
E221SD1CGE
marking code 1AW
tme57
E221SD1CGE
h032
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SAW MARKING CODE SOT-23
Abstract: No abstract text available
Text: NPN Silicon RF Transistor • • BF 799 Suitable for broadband RF amplifiers up to 500 MHz in the high tuning range Particularly suitable for SAW filter driver application in TV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape
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Q62702-F788
Q62702-F935
SAW MARKING CODE SOT-23
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Untitled
Abstract: No abstract text available
Text: ZDU 4 ZDU 2.5 Tension Clamp 35mm DIN-Rail Terminals Isolated Ground* I ZDU 6 ZDU 2.5/3AN I P Single Level Single Level Single Level S P Branch Terminal Block Selection Data Version Part No. Part No. Part No. Part No. Yellow Wemid with Green ground marking
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vishay siliconix code marking
Abstract: No abstract text available
Text: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code
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S-01830--
21-Aug-00
S-01830--Rev.
vishay siliconix code marking
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BF450
Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
Text: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings
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Q62702-F312
Q62702-F313
0235bG5
235b05
00bb7fc
10MHz
BF450
BF451
BF 450
IY21
SIEMENS marking
IC marking jw
SiEMENS PM 350 92
bf 451
tag 451
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Untitled
Abstract: No abstract text available
Text: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-
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ERB35(
I95t/R89)
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MIL-C-13924
Abstract: AMPHENOL TMM
Text: P P . MOT. S C A H T H IS PB A W tM Q .059 REVISIONS SYM A DESCRIPTION DATE OFFICIAL ENG. RELcASE TO MFG. tihxji i E.C.O. NO. APPR. DIES ALIKE IF NOT OTHERWISE STATED. MARKING ALIGNED WITH CAVITIES STAMPED LETTERS A.B & C. TEXT HCIGHT 1/16. .059 .082 DIA .070 DIA
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C52-60
MIL-C-13924.
82-5589CC
227-I
I-2-88
MIL-C-13924
AMPHENOL TMM
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