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    MARKING J6 TRANSISTORS Search Results

    MARKING J6 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING J6 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-23 S9014LT1 S9015LT1 30MHz

    S9014

    Abstract: transistor SOT23 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz S9014 transistor SOT23 J6

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz

    transistor SOT23 J6

    Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6

    transistor S9014

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz transistor S9014

    Untitled

    Abstract: No abstract text available
    Text: DMA56604 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J6  Basic Part Number


    Original     		PDF DMA56604 UL-94 DRA2114Y DMA566040R

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03


    Original     		PDF WBFBP-03B WBFBP-03B TP9014NND03 TP9015NND03

    j6 transistor

    Abstract: transistor j6 marking J6 transistors marking J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03


    Original     		PDF WBFBP-03B WBFBP-03B TP9014NND03 TP9015NND03 TP9014NND03 j6 transistor transistor j6 marking J6 transistors marking J6

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M


    Original     		PDF WBFBP-03B WBFBP-03B S9014M S9015M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M


    Original     		PDF WBFBP-03B WBFBP-03B S9014M S9015M

    S9015

    Abstract: S9015M S9014M
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M


    Original     		PDF WBFBP-03B WBFBP-03B S9014M S9015M S9015 S9015M S9014M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-323 S9014W S9015W 100mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-323 S9014W S9015W 100mA, 30MHz

    marking J6 transistors

    Abstract: smd marking j6 30MHZ kst9014
    Text: Transistors SMD Type NPN Transistors KST9014 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector Current :IC=0.1A 1 0.55 Excellent hFE linearity +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF KST9014 OT-23 100mA, 30MHZ marking J6 transistors smd marking j6 30MHZ kst9014

    Untitled

    Abstract: No abstract text available
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KST9014 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector Current :IC=0.1A 1 0.55 Excellent hFE linearity +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF KST9014 OT-23 100mA, 30MHZ

    transistor SOT23 J6

    Abstract: transistor SOT-23 marking code J6 mms9014 marking J6 transistors sot-23 MARKING CODE 21 MMS9014 SOT-23 Transistor marking code K j6 sot23 marking code j6
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V


    Original     		PDF MMS9014 OT-23 -55OC OT-23 100uAdc, 10mAdc, 30MHz) transistor SOT23 J6 transistor SOT-23 marking code J6 mms9014 marking J6 transistors sot-23 MARKING CODE 21 MMS9014 SOT-23 Transistor marking code K j6 sot23 marking code j6

    transistor SOT23 J6

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A


    Original     		PDF MMS9014 OT-23 -55OC OT-23 100uAdc, 50Vdc, 35Vdc, transistor SOT23 J6

    MARKING E1 SOT23 TRANSISTOR

    Abstract: S9014LT1 J6 S9014LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9014LT1 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.1 A


    Original     		PDF OT-23 OT--23 S9014LT1 S9014LT1 037TPY 950TPY 550REF 022REF MARKING E1 SOT23 TRANSISTOR S9014LT1 J6

    transistor SOT23 J6

    Abstract: marking J6
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • • NPN Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors


    Original     		PDF MMS9014 OT-23 -55OC OT-23 100uAdc, transistor SOT23 J6 marking J6

    transistor SOT23 J6

    Abstract: MMS9014 micro transistor j6 sot23
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF MMS9014 OT-23 -55OC OT-23 transistor SOT23 J6 MMS9014 micro transistor j6 sot23

    transistor SOT23 J6

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF MMS9014 OT-23 -55OC OT-23 100uAdc, transistor SOT23 J6

    transistor SOT23 J6

    Abstract: micro transistor
    Text: MCC TM Micro Commercial Components MMS9014-L MMS9014-H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF MMS9014-L MMS9014-H OT-23 -55OC OT-23 transistor SOT23 J6 micro transistor

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    V3102

    Abstract: No abstract text available
    Text: R.F. TRANSISTORS AND DIODES TABLE 2: E-LINE H YPERA BRU PT V A R IA B LE C A P A C IT A N C E TUNER D IO D ES Hyperabrupt tuning diodes m ay be used in any electronic tuning syste m to replace conventional tuning diodes. Rem ote tuning control, autom atic frequency control and octave tuning in mobile, air­


    OCR Scan     		PDF ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A OT-23 BBY31 BBY40 V3102