siemens C166 instruction set
Abstract: SAB-C165-L25M C165 SAB-C165-LM SAB-C165-LM3V SAF-C165-L25M SAF-C165-LM SAF-C165-LM3V CPU21
Text: Microcontroller Components Errata Sheet March 30, 2001 / Release 1.0 Device: Stepping Code / Marking: Package: SAB-C165-LM, -LF SAF-C165-LM, -LF SAB-C165-L25M, -L25F SAF-C165-L25M, -L25F SAB-C165-LM3V, -LF3V SAF-C165-LM3V, -LF3V ES-HA, HA P-MQFP-100, P-TQFP-100
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SAB-C165-LM,
SAF-C165-LM,
SAB-C165-L25M,
-L25F
SAF-C165-L25M,
SAB-C165-LM3V,
SAF-C165-LM3V,
P-MQFP-100,
P-TQFP-100
siemens C166 instruction set
SAB-C165-L25M
C165
SAB-C165-LM
SAB-C165-LM3V
SAF-C165-L25M
SAF-C165-LM
SAF-C165-LM3V
CPU21
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74HC4316A
Abstract: MC14016 MC14066 MC74HC4316A 948F HC4316A
Text: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and http://onsemi.com Digital Power Supplies High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low
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MC74HC4316A
MC74HC4316A
HC4316A
MC14016
MC14066,
HC4066A.
r14525
MC74HC4316A/D
74HC4316A
MC14066
948F
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74HC4316A
Abstract: 948F HC4066A HC4316A MC14016 MC14066 MC74HC4316A
Text: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies http://onsemi.com High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low
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MC74HC4316A
MC74HC4316A
HC4316A
MC14016
MC14066,
HC4066A.
r14525
MC74HC4316A/D
74HC4316A
948F
HC4066A
MC14066
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LF-340
Abstract: No abstract text available
Text: Casing Type Metal box LF Series Compliance with CE Marking LF-3000 (LF-3000 Series Series) [RoHS [RoHS Compliant] Compliant] TÜV Rheinland Withstanding Insulation resistance voltage 1 min., 500VDC 1 min., line to ground line to ground AC (V) (M⏲) min.
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LF-3000
LF-3000
500VDC
50V/60Hz,
LF-3200
LF-3300
LF-3400
LF-3500
LF-3600
LF-3400
LF-340
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AP2420
Abstract: 1302h C166 I2C PEC single byte software 1303H AP2424 C161PI C167 SAB-C161PI-LF SAB-C161PI-LM SAF-C161PI-LF
Text: Microcontroller Components Errata Sheet July 6, 2001 / Release 1.4 Device: SAB-C161PI-LM, SAF-C161PI-LM, SAB-C161PI-LM3V SAB-C161PI-LF, SAF-C161PI-LF SAB-C161PI-LF3V Stepping Code / Marking: Package: ES-AA, AA ES-BA-H, BA-H P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The
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SAB-C161PI-LM,
SAF-C161PI-LM,
SAB-C161PI-LM3V
SAB-C161PI-LF,
SAF-C161PI-LF
SAB-C161PI-LF3V
P-MQFP-100-2,
P-TQFP-100-1
C161PI
AP2420
1302h
C166 I2C PEC single byte software
1303H
AP2424
C167
SAB-C161PI-LF
SAB-C161PI-LM
SAF-C161PI-LF
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LF-340
Abstract: LF3400 LF-3300
Text: Casing Type Metal box LF Series Compliance with CE Marking LF-3000 (LF-3000 Series Series) [RoHS [RoHS Compliant] Compliant] Withstanding Insulation resistance voltage 1 min., 500VDC 1 min., line to ground line to ground AC (V) (M⏲) min. Rated voltage Rated current
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LF-3000
LF-3000
500VDC
50V/60Hz,
LF-3200
LF-3300
LF-3400
LF-3500
LF-3600
LF-3400
LF-340
LF3400
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LF-3200
Abstract: No abstract text available
Text: Casing Type Metal box LF Series For Compliance with CE Marking LF-3000 LF-3000 Series Series TÜV Rheinland Withstanding Insulation resistance voltage 1 min., 500VDC 1 min., line to ground line to ground AC V (M⏲) min. 2000 300 2000 300 2000 300 2000 300
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LF-3000
500VDC
LF-3200
LF-3300
LF-3400
LF-3500
LF-3600
50V/60Hz,
LF-3200
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm
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512Mb:
MT42L32M16D1
09005aef8467caf2
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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MT42L16M32
Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
MT42L16M32
MT42L16M32D
MT42L32M16D1
MT42L32M16D
PS 229
LPDDR2 PoP
LPDDR2 DRAM
LPDDR2-1066
Micron LPDDR2
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MT42L16M32D1
Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
7600B
Dynamic Memory Refresh Controller
LPDDR2-1066
121ball
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LPDDR2-1066
Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
Text: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die
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MT42L64M64D2,
MT42L128M64D4,
MT42L96M64D3
240-ball
09005aef84645b7c
LPDDR2-1066
micron lpddr2
lpddr2 DQ calibration
LPDDR2 SDRAM micron
MT42L128M64D4
lpddr2
MT42L64M64D2
micron LPDDR2 X32
LPDDR2 SDRAM
mt42L128M64D
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LF353
Abstract: LF353P LF353/301/TI
Text: LF353 JFET-INPUT DUAL OPERATIONAL AMPLIFIER SLOS012B – MARCH 1987 – REVISED AUGUST 1994 D D D D D D D D D OR P PACKAGE TOP VIEW Low Input Bias Current . . . 50 pA Typ Low Input Noise Current 0.01 pA/√Hz Typ Low Input Noise Voltage . . . 18 nV/√Hz Typ
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LF353
SLOS012B
LF353
LF353P
LF353/301/TI
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Untitled
Abstract: No abstract text available
Text: LF347, LF347B JFET-INPUT QUAD OPERATIONAL AMPLIFIERS SLOS013B – MARCH 1987 – REVISED AUGUST 1994 D D D D D D D D OR N PACKAGE TOP VIEW Low Input Bias Current . . . 50 pA Typ Low Input Noise Current 0.01 pA/√Hz Typ Low Total Harmonic Distortion Low Supply Current . . . 8 mA Typ
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LF347,
LF347B
SLOS013B
LM348
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lf347m
Abstract: No abstract text available
Text: LF147, LF347-N www.ti.com SNOSBH1D – MAY 1999 – REVISED MARCH 2013 LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers Check for Samples: LF147, LF347-N FEATURES DESCRIPTION • • • • • • • • • • The LF147 is a low cost, high speed quad JFET input
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LF147,
LF347-N
LF147/LF347
LF147
lf347m
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Untitled
Abstract: No abstract text available
Text: LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C – MAY 2000 – REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 FEATURES 1 Advantages 23 • • •
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LF155,
LF156,
LF355,
LF356,
LF357
LF155/LF156/LF256/LF257/LF355/LF356/LF357
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Untitled
Abstract: No abstract text available
Text: LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C – MAY 2000 – REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 FEATURES 1 Advantages 23 • • •
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LF155,
LF156,
LF355,
LF356,
LF357
LF155/LF156/LF256/LF257/LF355/LF356/LF357
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LF353N
Abstract: LF353N equivalent LF253 LF253D LF253DT LF253N LF353 LF353D LF353DT LF353-N
Text: LF253 LF353 Wide bandwidth dual JFET operational amplifiers Features • Low power consumption ■ Wide common-mode up to VCC+ and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage
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LF253
LF353
offse70
LF253D
LF253DT
LF253N
LF353N
LF353N
LF353N equivalent
LF253D
LF253DT
LF253N
LF353
LF353D
LF353DT
LF353-N
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LF351
Abstract: LF351N dip8 Thermal resistance DIP8 LF351N LF251N LF151 LF151D LF151DT LF351N equivalent LF251
Text: LF351 Wide bandwidth single JFET operational amplifiers Features • Internally adjustable input offset voltage ■ Low power consumption ■ Wide common-mode up to VCC+ and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection
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LF351
lo365
LF151D
LF151DT
LF151N
LF251N
LF351N
LF351D
LF351
LF351N dip8
Thermal resistance DIP8
LF351N
LF251N
LF151
LF151D
LF151DT
LF351N equivalent
LF251
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Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIO O X Yes Y«s ELECTRICAL SPECIFICATIONS @ 25°C u n less oth erw ise n o ted : MARKING DETAIL ON TOP SURFACE OF SHIELD INDUCTANCE: 350u H m in ., 100kH z, lOOmV, 8mADC, J 1 - J 2 ; J 3 - J 6 , Lp.
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OCR Scan
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100kH
100MHz.
30MHz.
45MHz.
60MHz.
80MHW
1000pF
MIC25U13-5115W-LF3
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75 517
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIOOX Yes Yes f - 7/|=om p"°n| fczJW E-M ID C O M MARKING DETAIL ON TOP SU R F A C E OF SH IELD / I * = " ELECTRICAL SPECIFICATIONS <D 25°C u n less otherw ise n o ted : \ jT lki û K ) LJ \ l SOLDER SUFFIX
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OCR Scan
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100kH
100MHz.
UL60950-1
E205930
MIC24U13-5115W
75 517
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Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb —FREE LF3 SnIO O X Yes Y«s r e c o m p ila ") k O w E - M ID C O M MARKING DETAIL ON TOP SURFACE OF SHIELD ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise noted: T E ST CONDITION S VALUE SOLDER SUFFIX
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OCR Scan
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100kHz,
P9-P11)
P12-P
100MHz
30MHz
45MHz
60MHz
80MHz
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Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIO O X Yes Yes r 7 f — P"°n) fc O w E -M ID C O M MARKING DETAIL ON TOP SU R F A C E OF SH IELD ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise n o ted : INDUCTANCE: 350uH m in., 100kHz, lOOmV, 8mADC,
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OCR Scan
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350uH
100kHz,
1500Vrm
-18dB
-15dB
-12dB
100MHz.
60MHz.
80MHz.
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marking sh
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb —FREE LF3 Sn100% Yes No I /i compliant k O w i> M ID C 0 M MARKING DETAIL ON TOP SU R F A C E OF SHIELD ELECTRICAL SPECIFICATIONS 25°C u n le s s o th e rw ise n o te d : INDUCTANCE: 350uH m in., 100kHz, lOOmV, 8mADC,
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OCR Scan
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Sn100%
350uH
100kHz,
1500Vrms
100MHz.
30MHz.
60MHz.
80MHz.
marking sh
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