E72873
Abstract: No abstract text available
Text: VUO 120-xxNO2T Three Phase Rectiier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin coniguration see outlines. Features:
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120-xxNO2T
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
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E72873
Abstract: 120-16NO2T VUO120-16NO2T ntc application vuo120-16no2
Text: VUO 120-xxNO2T Three Phase Rectifier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin configuration see outlines. Features:
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120-xxNO2T
1200/1600V
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
VUO120-16NO2T
ntc application
vuo120-16no2
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SMD MARKING CODE
Abstract: SMD MARKING CODE 39 ALL SMD CODe smd marking IL Resonators SMD marking marking code 39 SMD MARKING CODE saw smd marking 31 ROC434D52-OG SMD rob
Text: SAW Resonators RO Series ¡iSMD 5x5¡j System Center Freq. MHz IL(Typ.) (dB) Tolerance (KHz) Part Number Package Marking Code Remote 303.825 1.50 ¡Ó75 ROC303D82-O1 SMD 5x5 RO1 Remote 303.875 1.50 ¡Ó75 ROC303D87-O2 SMD 5x5 RO2 Remote 315.00 1.50 ¡Ó75
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ROC303D82-O1
ROC303D87-O2
ROC315D00-O6
ROC390D00-O7
ROC418D00-OA
ROC426D55-OB
ROC433D42-OE
ROC433D92-OF
3D42-PE
ROT433D92-PF
SMD MARKING CODE
SMD MARKING CODE 39
ALL SMD CODe
smd marking IL
Resonators SMD marking
marking code 39
SMD MARKING CODE saw
smd marking 31
ROC434D52-OG
SMD rob
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N5222
Abstract: DAC ic 0808 pin diagram NTMFS4833NT1G Rcs22 ERJ3EKF1001V kcs2 datasheet NTMFS4821N QFN28 4x4 CS11 CS12
Text: NCP5222 High Performance Dual-Channel / Two-Phase Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM The NCP5222, a fast−transient−response and high−efficiency dual−channel / two−phase buck controller with built−in gate drivers,
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NCP5222
NCP5222,
NCP5222/D
N5222
DAC ic 0808 pin diagram
NTMFS4833NT1G
Rcs22
ERJ3EKF1001V
kcs2 datasheet
NTMFS4821N
QFN28 4x4
CS11
CS12
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N5222
Abstract: QFN28 4x4 PCF0603R NTMFS4833NT1G Rcs22 N522 PCF0603 sot-23 m21 C1608C0G1H103 kcs2 datasheet
Text: NCP5222 High Performance Dual-Channel / Two-Phase Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM The NCP5222, a fast−transient−response and high−efficiency dual−channel / two−phase buck controller with built−in gate drivers,
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NCP5222
NCP5222,
NCP5222/D
N5222
QFN28 4x4
PCF0603R
NTMFS4833NT1G
Rcs22
N522
PCF0603
sot-23 m21
C1608C0G1H103
kcs2 datasheet
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MARKING HYNIX
Abstract: MARKING HYNIX Origin Country
Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration
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HY62LF16206A-LT12C
128Kx16bit
120ns
MARKING HYNIX
MARKING HYNIX Origin Country
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Untitled
Abstract: No abstract text available
Text: CAPACITOR PACKAGING & MARKING Johanson capacitors are available taped per EIA standard 481. Tape options include 7” and 13” diameter reels. Johanson uses high quality, dust free, punched 8mm paper tape and plastic embossed 8mm tape for thicker MLCCs. Quantity
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hynix hy
Abstract: HY62LF16206A HY62LF16206A-LT12C 48-TSOP1 MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1
Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration
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HY62LF16206A-LT12C
128Kx16bit
48-TSOP1
120ns
hynix hy
HY62LF16206A
HY62LF16206A-LT12C
MARKING HYNIX
MARKING HYNIX Origin Country
48TSOP1
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Untitled
Abstract: No abstract text available
Text: BBY66-05 3 Silicon Tuning Diode High capacitance ratio High Q hyperabrupt tuning diode 2 Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 Very low capacitance spread Type BBY66-05 VPS05161 Marking Pin Configuration
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BBY66-05
VPS05161
Jun-03-2002
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MC74AC273
Abstract: MC74AC373
Text: MC74AC374, MC74ACT374 MARKING DIAGRAMS PDIP−20 SO−20 MC74AC374N AWLYYWW AC374 AWLYYWW MC74ACT374N AWLYYWW ACT374 AWLYYWW A WL, L YY, Y WW, W TSSOP−20 EIAJ−20 AC 374 ALYW 74AC374 AWLYWW ACT 374 ALYW 74ACT374 AWLYWW = Assembly Location = Wafer Lot = Year
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MC74AC374,
MC74ACT374
PDIP-20
MC74AC374N
SO-20
AC374
TSSOP-20
EIAJ-20
74AC374
MC74ACT374N
MC74AC273
MC74AC373
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HY62CT081
Abstract: hy62ct081e HY62CT08081E
Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load
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HY62CT08081E
32Kx8bit
HY62CT081E
HY62CT08081E
HY62CT081
hy62ct081e
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HY62CT08081E
Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load
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HY62CT08081E
32Kx8bit
HY62CT08081E
HY62CT08081E-C
HY62CT08081E-DGC
HY62CT08081E-DGE
HY62CT08081E-DGI
HY62CT08081E-DPC
HY62CT08081E-DPE
HY62CT08081E-DPI
HY62CT08081E-E
HY62CT08081E-I
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Untitled
Abstract: No abstract text available
Text: HY62LF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information
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HY62LF16201A
128Kx16bit
HY62QF16201A
HY62LF16201A
o6201A
HYLF621Ac
100ns
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hysf643
Abstract: No abstract text available
Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed
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HY62SF16403A
256Kx16bit
HYSF643A
100ns
120ns
hysf643
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HY628100B-LLG55
Abstract: No abstract text available
Text: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert
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HY628100B
128Kx8bit
HY628100B
HY628100B-LLG55
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Untitled
Abstract: No abstract text available
Text: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia
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K9S2808V0A-SSB0
SMFV016A
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hy62kt081e
Abstract: HY62VT08081E-DPC
Text: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type
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HY62K
T08081E
32Kx8bit
T08081
HY62vT081E
HY62KT081E
HY62UT081E
hy62kt081e
HY62VT08081E-DPC
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0
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Q62702-A919
OT-23
023Sb05
235b05
015030b
535b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB 439 Preliminary Data • For VHF tuned circuit applications • High figure of merit Type Marking Ordering Code tape and reel Pin Configuration Package1) BB 439 white 2 Q62702-B577 2 o1- |1 ö -o
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Q62702-B577
CHA0700I
OD-323
EHD07036
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon RF Switching Diode • BA 582 For low-loss VH F band switching in T V/VTR tuners Type Marking Ordering Code Pin Configuration Package1 BA 582 blue S Q62702-A829 S O D -123 o o1- - 2 1^ DM 7001 Maximum Ratings
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Q62702-A829
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BAV99
Abstract: No abstract text available
Text: 32E 1 • fla3fc»32ü DOlbSB6! H « S I P Silicon Switching Diode Array BAV 99 _ SIEMENS/ SPCLi SEMICONDS • • T-*>3-o1 _ For high-speed switching Connected in series C2.AT Type S B A V 99 Marking Ordering code or versions In bulk
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Q68000-A1185
Q68000-A549
fl23b32G
BAV99
T-03-09
23b320
0QlbS42
BAV99
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099
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PDF
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Q62702-A3461
OT-143
EHD07095
01BQ33E
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Untitled
Abstract: No abstract text available
Text: MODELS ST-22 and ST-23 Chip Trimmers Surface Mount, .157" [4.0mm] Square Single Turn, Open Frame FEATURES • Designed for efficient, accurate miniaturization. • Can be wave or dip soldered without rotor problems. • Coded marking for easy identification of resistance value.
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ST-22
ST-23
250PPM/
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RER65F
Abstract: No abstract text available
Text: A COMPANY MODEL SM M 0204 Cylindrical Thin Film Chip Resistors OF p i|F Industrial, Precision FEATURES • Cylindrical, leadless body style MELF • Solderable end cap construction 1Color band marking • 8mm tape width reel or bulk packaging 1Maximum operating voltage is 200 V
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SMM0204
43-330k
22-330k
10-475k
1-10M
E24-E192
RER65F
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