MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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9930gm
Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Text: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter
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AP9930GM
9930GM
9930gm
AP9930GM
DEVICE MARKING p1g
marking code P1D
9930G
P2d MARKING CODE
n-channel so8 60v
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930AGM-HF-3
AP9930AGM-HF-3
AP9930A
9930AGM
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930GM-HF-3
AP9930GM-HF-3
AP9930
9930GM
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OFL-12
Abstract: SFZ-3A jds optics switch 1 Seiko fc electronic passive components catalog sii Product Catalog
Text: Fiber Optics Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module The optical communications technology of the next generation will be of increasing importance and extremely
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1-9807-020-MS/AC
OFL-12
SFZ-3A
jds optics switch 1
Seiko fc
electronic passive components catalog
sii Product Catalog
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C3025LS
Abstract: No abstract text available
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
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Untitled
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
AEC-Q101
OT323
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marking p1S
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
AEC-Q101
OT323
marking p1S
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Untitled
Abstract: No abstract text available
Text: DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device RDS ON max ID max TA = +25°C • 2 x N + 2 x P channels in a SOIC package • Low On-Resistance 45mΩ @ VGS = 10V 4.5A • Low Input Capacitance 4A • Fast Switching Speed
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DMHC4035LSD
AEC-Q101
DS36287
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E 94733
Abstract: marking p1S E 94733 3
Text: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Complementary type: BFT92W PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
BFT92W
OT323
E 94733
marking p1S
E 94733 3
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marking p1S
Abstract: BCR108W BFR92W BFT92W
Text: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Complementary type: BFT92W PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
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BFR92W
BFT92W
OT323
marking p1S
BCR108W
BFR92W
BFT92W
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P2M SCR
Abstract: P0202EN P0201EN P0201MN P0201NN P0201SN P0202MN P0202NN P0202SN p2m 3x
Text: P0201xN P0202xN SENSITIVE GATE SCR FEATURES IT RMS = 0.8A VDRM = 500V to 800V Low IGT ≤ 20 µA max to < 200 µA A K A G DESCRIPTION The P0201xN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high
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P0201xN
P0202xN
P0201xN
OT223
P2M SCR
P0202EN
P0201EN
P0201MN
P0201NN
P0201SN
P0202MN
P0202NN
P0202SN
p2m 3x
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BCR108W
Abstract: BFR92W E6327 VSO05561
Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR92W
VSO05561
OT323
BCR108W
BFR92W
E6327
VSO05561
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Untitled
Abstract: No abstract text available
Text: bq76PL102 www.ti.com . SLUS887A – DECEMBER 2008 – REVISED OCTOBER 2009 PowerLAN Dual-Cell Li-Ion Battery Monitor With PowerPump™ Cell Balancing
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bq76PL102
SLUS887A
bq78PL114
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Transistor BFT 42
Abstract: VSO05561
Text: BFR 92W 3 NPN Silicon RF Transistor For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2 Complementary type BFT 92 PNP 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VSO05561
OT-323
900MHz
Nov-30-2000
Transistor BFT 42
VSO05561
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Untitled
Abstract: No abstract text available
Text: BFR92W Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Pb-free RoHS compliant and halogen-free package with visible leads • Qualification report according to AEC-Q101 available
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BFR92W
AEC-Q101
OT323
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Untitled
Abstract: No abstract text available
Text: SHARP GP1S50/GP1S51V/GP1S52V/GP1S54 General Purpose Photointerrupter G P 1S 50/G P1S 5 1 V G P 1S 52V/G P1S 54 • Features ■ Applications 1. High sensing accuracy Sliit width: 0.5mm 1. O A equipm ent, such as FD D s, printers, 2. Both-sides mounting type: GP1S50 (Case height: 10mm)
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GP1S50/GP1S51V/GP1S52V/GP1S54
GP1S50
GP1S51V
6P1S52V
GP1S54
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Untitled
Abstract: No abstract text available
Text: <p Preliminary Datasheet FUJITSU S e p te m b e r 1996 V ersion 0.8 MB86681 ATM Switch Element SRE-L FM L/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such
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MB86681
L/NPD/SRE-L/DS/1223
MB86681
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P2M SCR
Abstract: P0202MN SOT223 MARKING SG P0202EN marking dt1 P0201EN P0201SN P0202NN P0201MN
Text: / Z T SG S-TH O M SO N raisœi[LICTl lB®S P0201x N P0202xN SENSITIVE GATE SCR FEATURES • It rms = 0.8A > VDRM= 500V to 800V ■ Low Ig t £ 20 nA max to < 200 |iA DESCRIPTION The P0201xN series of SCRs uses a high performance planar PNPN technology. These
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OCR Scan
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P0201x
P0202xN
P0201xN
1995SGS-THOMSON
7T2T237
DD70D7G
P2M SCR
P0202MN
SOT223 MARKING SG
P0202EN
marking dt1
P0201EN
P0201SN
P0202NN
P0201MN
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p0201
Abstract: P0201MN P0202MN P2M SCR P0202EN P0202NN 0019J P0201EN P0201SN P0202SN
Text: G ì. SG S-TH O M SO N P0201XN P0202xN ¡u SENSITIVE GATE SCR FEATURES • It rm s = 0 .8 A ■ V drm = 500V to 800V ■ Low Ig t ^ 20 joA max to < 200 jiA DESCRIPTION The P0201xN series of S C R s uses a high performance planar PNPN technology. These parts are intended for general purpose high
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P0201xN
P0202xN
P0201xN
1995SGS-THOMSON
7T2T237
p0201
P0201MN
P0202MN
P2M SCR
P0202EN
P0202NN
0019J
P0201EN
P0201SN
P0202SN
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1E70
Abstract: No abstract text available
Text: THIS COPY IS P R OV I DE D PANDUIT PART NUMBER ON A R E S T R I C T E D WIRE SIZE AWG Imm* P1B-P47 * 22-18 ,5-1,5) P14-P47* 16-14 12,0-2,5) P10-P55 12-10 (4,0-6,01 BASIS AND IS DIMENSIONS ± .0 2 0 ± „015 ± -0 10( ± ,3) A [±>51 B DIA. .75 .07 (19,1) (1,8)
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P1B-P47
P14-P47*
P10-P55
CT-260,
CT-1E70,
CT-100,
CT-160,
CT-200,
E52164
P1S-P47
1E70
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E 94733
Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-F1488
OT-323
900MHz
E 94733
p1S SOT-89
BFr pnp transistor
SPICE 2G6
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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PDF
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Q62702-F1488
OT-323
053SbOS
900MHz
15nlA
23Sb05
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