Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD PA3312 CMOS IC DUAL 2.6W AUDIO POWER AMPLIFIER WITH FOUR SELECTABLE GAIN SETTINGS AND INPUT-MUX CONTROL DESCRIPTION The UTC PA3312 is a monolithic integrated circuit that stereo bridged audio power amplifiers capable of producing 2.6W into 3Ω
|
Original
|
PDF
|
PA3312
PA3312
PA3312,
QW-R107-055
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD PA3332 Preliminary CMOS IC 2.6W STEREO AUDIO AMPLIFIER DESCRIPTION The UTC PA3332 is a stereo audio power amplifier. When the device is idle, it enters SHDN mode for some low current consumption applications. The current dissipation is thus
|
Original
|
PDF
|
PA3332
PA3332
QW-R502-488
|
Untitled
Abstract: No abstract text available
Text: OPA333A-EP, OPA2333A-EP www.ti.com . SGLS383B – APRIL 2007 – REVISED JUNE 2008 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS
|
Original
|
PDF
|
OPA333A-EP,
OPA2333A-EP
SGLS383B
01-Hz
10-Hz
|
Untitled
Abstract: No abstract text available
Text: OPA333A-EP, OPA2333A-EP www.ti.com . SGLS383B – APRIL 2007 – REVISED JUNE 2008 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS
|
Original
|
PDF
|
OPA333A-EP,
OPA2333A-EP
SGLS383B
01-Hz
10-Hz
|
Untitled
Abstract: No abstract text available
Text: OPA333-Q1 www.ti.com SBOS522 – JUNE 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA333-Q1 FEATURES 1 • • • • • • • • Qualified for Automotive Applications Low Offset Voltage: 10 mV Max 0.01-Hz to 10-Hz Noise: 1.1 mVPP
|
Original
|
PDF
|
OPA333-Q1
SBOS522
01-Hz
10-Hz
OPA333
|
pb3300
Abstract: PB680 PA10000 PA2200 PA22000 pa150 PA100 PA1000 PA330 PA3300
Text: SOCIETE DES COMPOSANTS RECORD Axial MKP axiaux Condensateurs de faible encombrement, autocicatrisants et non inductifs avec une géométrie axiale minimisant le facteur de pertes et augmentant sensiblement leurs performances. Ils sont particulièrement adaptés à l’audio
|
Original
|
PDF
|
F-36130
pb3300
PB680
PA10000
PA2200
PA22000
pa150
PA100
PA1000
PA330
PA3300
|
Untitled
Abstract: No abstract text available
Text: OPA333A-EP, OPA2333A-EP www.ti.com . SGLS383B – APRIL 2007 – REVISED JUNE 2008 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS
|
Original
|
PDF
|
OPA333A-EP,
OPA2333A-EP
SGLS383B
01-Hz
10-Hz
C/125
|
MKP 357
Abstract: PB100 PA100 PA1000 PA150 PA330 PA560 PB3300
Text: E401FT4-3 SOCIETE DES COMPOSANTS RECORD Axial MKP axiaux Condensateurs de faible encombrement, autocicatrisants et non inductifs avec une géométrie axiale minimisant le facteur de pertes et augmentant sensiblement leurs performances. Ils sont particulièrement adaptés à l’audio
|
Original
|
PDF
|
E401FT4-3
F-36130
MKP 357
PB100
PA100
PA1000
PA150
PA330
PA560
PB3300
|
2SC3355
Abstract: transistor 2sc3355 and application PA33 marking PA33
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS
|
Original
|
PDF
|
2SC3355
2SC3355
transistor 2sc3355 and application
PA33
marking PA33
|
marking PA33
Abstract: 2SC3582 PA33
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters inches low-noise and small signal amplifiers from VHF band to UHF band. Low-
|
Original
|
PDF
|
2SC3582
2SC3582
marking PA33
PA33
|
marking PA33
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range
|
Original
|
PDF
|
2SC3582
2SC3582
2SC3582-T
PU10210EJ01V0DS
marking PA33
|
transistor 2sc3355 and application
Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
|
Original
|
PDF
|
2SC3355
2SC3355
2SC3355-T
PU10208EJ01V0DS
transistor 2sc3355 and application
transistor 2sc3355 and application NOTICE
2SC3355, npn
2SC3355-T
PA33
|
2SC2570A
Abstract: marking PA33 2SC2570A-T PA33
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz
|
Original
|
PDF
|
2SC2570A
2SC2570A
2SC2570A-T
PU10207EJ01V0DS
marking PA33
2SC2570A-T
PA33
|
MTBF fit IGBT 1200
Abstract: SMD ZENER DIODE 73a 100w car amplifier ovc 3880 Non - Isolated Buck, triac dimmable E113 FET smd transistor l42 diode smd ED 68A transformer e133
Text: AC/DC CONVERTERS DC/DC CONVERTERS SWITCHING REGULATORS LED-DRIVERS CATALOGUE 2015 WE POWER YOUR PRODUCTS www.recom-electronic.com ECONOLINE - Unregulated Series Contents RM RM/E ROL R0.25S R0.25D R0.25DA R0.25S/E RBL/E R0.5S_D Power Watts Isolation (kVDC)
|
Original
|
PDF
|
25S/E
N30th
A8411,
MTBF fit IGBT 1200
SMD ZENER DIODE 73a
100w car amplifier
ovc 3880
Non - Isolated Buck, triac dimmable
E113 FET
smd transistor l42
diode smd ED 68A
transformer e133
|
|
2SC3582
Abstract: 2SC3582-T PA33 marking PA33
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10210EJ01V0DS
2SC3582
2SC3582
2SC3582-T
PA33
marking PA33
|
RE1201
Abstract: okaya catalog RA-362MS LE334-M XYE104
Text: NOISE SUPPRESSING COMPONENTS Customer’s Trust. NOISE SUPPRESSION CAPACITORS 3~26 NOISE SUPPRESSION CAPACITOR TECHNICAL DATA - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 4 ~11 LE SERIES - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 2
|
Original
|
PDF
|
H0207E1407-2E
RE1201
okaya catalog
RA-362MS
LE334-M
XYE104
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10207EJ01V0DS
2SC2570A
|
2SC2570A
Abstract: marking PA33
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10207EJ01V0DS
2SC2570A
2SC2570A
marking PA33
|
marking PA50
Abstract: D2PB02 7809 MARKING
Text: NJU6854 132COMMON x 132RGB LCD DRIVER FOR 65,536-COLOR STN DISPLAY ! GENERAL DESCRIPTION The NJU6854 is a 132COMMON x 132RGB LCD driver for 65,536-color STN display. It contains common drivers, RGB drivers, a serial and a parallel MPU interface circuit, an internal LCD power supply,
|
Original
|
PDF
|
NJU6854
132COMMON
132RGB
536-COLOR
NJU6854
784-bit
64x32x32)
marking PA50
D2PB02
7809 MARKING
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. PACKAFE DIMENSIONS
|
OCR Scan
|
PDF
|
2SC3582
2SC3582
S22e-FREQUENCY
|
Untitled
Abstract: No abstract text available
Text: NOISE SUPPRESION FILM CAPACITORS PA H OKAVA SERIES INTRODUCTION: The PA Series Metallized Polyester Film Capacitors are specially designed for interference suppression applications and across the line connection. The case and potting material are flame retardant, meet UL-94
|
OCR Scan
|
PDF
|
UL-94
PA155
PA185
PA225
|
Untitled
Abstract: No abstract text available
Text: PA SERIES INTRODUCTION: CERAMIC CAPACITORS The PA Series Metallized Polyester Film Capacitors are specially designed for interference suppression applications and across the line connection. The case and potting material are flame retardant, meet UL-94 VO class and have
|
OCR Scan
|
PDF
|
UL-94
PA683
PA823
PA124
PA154
PA224
PA274
PA334
PA394
PA474
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.
|
OCR Scan
|
PDF
|
2SC3582
2SC3582
|
transistor NEC D 822 P
Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.
|
OCR Scan
|
PDF
|
2SC3355
2SC3355
transistor NEC D 822 P
NEC D 822 P
transistor NEC D 587
transistor NEC B 617
nec a 634
transistor marking S00
TRANSISTOR b 772 p
|