C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
|
Original
|
PDF
|
1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
|
KRA313E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA313E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PO No. 2000. 12. 27 Item Marking Description Device Mark PO KRA313E hFE Grade - - Revision No : 0 1/1
|
Original
|
PDF
|
KRA313E
KRA313E
|
KRA313
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA313 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PO 1 2 Item Marking Description Device Mark PO KRA313 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KRA313
KRA313
|
BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
|
Original
|
PDF
|
1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
|
KRA113S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA113S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PO 1 2 Item Marking Description Device Mark PO KRA113S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KRA113S
OT-23
KRA113S
|
B35R
Abstract: Z6W27V DO-218 do218 Z6W27
Text: SEMICONDUCTOR Z6W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B35R 0D24 No. Item 1 Description Bar N(-) Type B35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
|
Original
|
PDF
|
Z6W27V
DO-218
B35R
Z6W27V
do218
Z6W27
|
b30r
Abstract: Z5W27V b30r 0d24 marking b30r do-218 do218 1b30r
Text: SEMICONDUCTOR Z5W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B30R 0D24 No. Item 1 Description Bar N(-) Type B30R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
|
Original
|
PDF
|
Z5W27V
DO-218
b30r
Z5W27V
b30r 0d24
marking b30r
do218
1b30r
|
E30A23VS
Abstract: A30S
Text: SEMICONDUCTOR E30A23VS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30S E30A23VS A : Voltage classification 0D24
|
Original
|
PDF
|
E30A23VS
E30A23VS
A30S
|
1A30R
Abstract: MARKING CMR A30R E30A23VR
Text: SEMICONDUCTOR E30A23VR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30R E30A23VR A : Voltage classification 0D24
|
Original
|
PDF
|
E30A23VR
1A30R
MARKING CMR
A30R
E30A23VR
|
e35r
Abstract: Z5W37V do-218 do218
Text: SEMICONDUCTOR Z5W37V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 E35R 0D24 No. Item 1 Description Bar N(-) Type E35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
|
Original
|
PDF
|
Z5W37V
DO-218
e35r
Z5W37V
do218
|
Z4W27V
Abstract: DO-218 B25R do218 month marking
Text: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24
|
Original
|
PDF
|
Z4W27V
DO-218
Z4W27V
B25R
do218
month marking
|
KDS2236M
Abstract: a016 2236a 2236 A
Text: SEMICONDUCTOR KDS2236M MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking 2236 A 016 No. Item Marking Description 1 Device Name 2236 KDS2236M 2 Polarity A Anode 3 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009 16
|
Original
|
PDF
|
KDS2236M
O-92M
KDS2236M
a016
2236a
2236 A
|
3400-0034
Abstract: No abstract text available
Text: Universal Marking System Possibilities Component Marking Terminal Block Marking Cable Marking Wire Marking Signs Name Plates Legend Plates Logo Plates 2 Altech Corp. • 35 Royal Road • Flemington, NJ 08822-6000 • Phone 908 806-9400 • FAX (908)806-9490 • www.altechcorp.com
|
Original
|
PDF
|
VS210
VS210
produce0021
VS200/210
VP100
VP500
VE500
280-012010-3M
3400-0034
|
do-218
Abstract: H35R Z5W48V do218 diode 218 transistor day
Text: SEMICONDUCTOR Z5W48V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 H35R 0D24 No. Item 1 Description Bar N(-) Type H35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
|
Original
|
PDF
|
Z5W48V
DO-218
H35R
Z5W48V
do218
diode 218
transistor day
|
|
|
E35A2CR
Abstract: e35a Diode MarkING N
Text: SEMICONDUCTOR E35A2CR MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35R 0D24 E35A2CR Year 0~9 : 2000~2009 D Month
|
Original
|
PDF
|
E35A2CR
E35A2CR
e35a
Diode MarkING N
|
transistor day
Abstract: diode 30s Diode MarkING N MARKING CMR E30A2CS
Text: SEMICONDUCTOR E30A2CS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30S 0D24 E30A2CS Year 0~9 : 2000~2009 D Month
|
Original
|
PDF
|
E30A2CS
transistor day
diode 30s
Diode MarkING N
MARKING CMR
E30A2CS
|
KRA563U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA563U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PO 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PO KRA563U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
|
Original
|
PDF
|
KRA563U
KRA563U
|
KRA763E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA763E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking PO 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PO KRA763E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRA763E
KRA763E
|
SAE-AS81531
Abstract: R6600 SAE-AS-81531 zH marking
Text: THT Labels: PermaSleeve Wire Marking Sleeves www.BradyID.com Benchtop Thermal Transfer Labels B-7641 PermaSleeve® ZH Low Halogen Polyolefin Wire Marking Sleeves B-7641 PermaSleeve® ZH Low Halogen Polyolefin Wire Marking Sleeves are 2:1 heat shrinkable, low halogen wire marking sleeves. The wire marking
|
Original
|
PDF
|
B-7641
SAE-AS-81531
MIL-STD-202
2ZH-187-2-WT-S-4
R4300,
R6400,
R6600,
SAE-AS81531
R6600
SAE-AS-81531
zH marking
|
diode u1G
Abstract: diode 29 SMA Package
Text: SEMICONDUCTOR SMAU1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking U1G 1 2 3 No. Item Marking Polarity Device Name Lot No. 2007. 7. 26 Revision No : 0 Description Bar Cathode U1G SMAU1G 7 Year 0~9 : 2000~2009 29 Week 29 : 29th Week
|
Original
|
PDF
|
|
diode b34
Abstract: b34 diode marking b34 smcb34 diode marking b34 b34 MARKING B34 on SMC Package b34 datasheet laser
Text: SEMICONDUCTOR SMCB34 MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B34 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B34 Lot No. 623 Revision No : 0 Description Cathode SMCB34 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
|
Original
|
PDF
|
SMCB34
diode b34
b34 diode
marking b34
smcb34
diode marking b34
b34 MARKING
B34 on
SMC Package
b34 datasheet
laser
|
MB6S
Abstract: marking MB6S mb6s diode
Text: SEMICONDUCTOR MB6S MARKING SPECIFICATION MBS PACKAGE 1. Marking method Laser Marking 2. Marking 1 2 C 5 22 4 3 No. Item Marking Description Polarity -, +, ~, ~ - Device Name C MB6S 0~9 Year 01~53 Week 0~9 : 2000~2009 Lot No. 2005. 7. 28 Revision No : 0 1/1
|
Original
|
PDF
|
|
MARKING B24
Abstract: diode b24 SMBB24
Text: SEMICONDUCTOR SMBB24 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B24 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B24 Lot No. 623 Revision No : 0 Description Cathode SMBB24 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
|
Original
|
PDF
|
SMBB24
MARKING B24
diode b24
SMBB24
|
transistor t05
Abstract: SMC Package marking 2 t05 transistor laser T05 Package transistor marking t05 T053 t05 marking
Text: SEMICONDUCTOR PG05NSSMC MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 T05 3 No. Item Polarity 2007. 1. 4 Marking Bar Type Name T05 Lot No. 623 Revision No : 0 Description Cathode PG05NSSMC 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
|
Original
|
PDF
|
PG05NSSMC
transistor t05
SMC Package
marking 2
t05 transistor
laser
T05 Package
transistor marking t05
T053
t05 marking
|
