TBF1608-245-R1N
Abstract: cyntec TBF
Text: CYNTEC CO., LTD. 乾坤科技股份有限公 乾坤科技股份有限公司 份有限公司 DOCUMENT : TBF1608245R1N REVISION : A0 PAGE : 1 OF 8 TBF-1608-245-R1N THIN FILM BAND PASS FILTER 1. Feature 1-1 Thin Film Band Pass Filter 1-2 WLAN Band Application.
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TBF1608245R1N
TBF-1608-245-R1N
TBF1608-245-R1N
cyntec TBF
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TBF-1608-245-R1N
Abstract: MARKING R1n cyntec TBF
Text: TBF-1608-245-R1N THIN FILM BAND PASS FILTER 1. Feature 1-1 Thin Film Band Pass Filter 1-2 WLAN Band Application. 1-3 Ultra Low Profile 1-4 Lead Free, RoHS compliance 2. Part Number TBF — 1608 — 1 (2) Where 245 (3) — R1N (4) (1) TBF : Thin Film Band Pass Filter
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TBF-1608-245-R1N
TBF-1608-245-R1N
2450MHz
2500MHz
1910MHz
5000MHz
TBFC245R1N-001
MARKING R1n
cyntec TBF
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION I ALTERATION [け 1 Ih，1 ，1， 11 Ih， r i_l 山 いl DATE Apr . 1 2012 Apr . 1 2 13 ム 1Company name changed ムl 川C om 州山 l E t t t ， ¥ I E 掠 コ = SYMBOL j 0r K _tl~1i;jι 二月中~ 一 ~ ; Jp j ITEM C O D E NUMBER
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10123ROFI
H10153ROFI
H10183R
H10223ROFI
H10273R
H10333ROFI
H10393ROFI
H10473R
H10563ROFI
H10683ROFI
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Untitled
Abstract: No abstract text available
Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain
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MMBTA13
MMBTA14
MMBTA63
MMBTA64)
OT-23
OT-23,
MIL-STD-202,
MMBTA14
100mA,
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Untitled
Abstract: No abstract text available
Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW
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MMBTA13
MMBTA14
MMBTA63
MMBTA64)
OT-23
OT-23,
MIL-STD-202,
MMBTA14
100mA
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Untitled
Abstract: No abstract text available
Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A TOP VIEW ·
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MMBTA13
MMBTA14
MMBTA63
MMBTA64)
OT-23
OT-23,
MIL-STD-202,
MMBTA14
100mA
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2SC2411KR
Abstract: MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124
Text: SC-59 BIPOLAR TRANSISTORS NPN TRANSISTORS The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Type Function 2SC2411KP amplifier 2SC2411KQ amplifier 2SC2411KR amplifier 2SC2412KQ general purpose
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SC-59
2SC2411KP
2SC2411KQ
2SC2411KR
2SC2412KQ
2SC2412KR
2SC2412KS
2SC2413KP
2SC2413KQ
2SC3837K
MMST8598
2SD1781KQ
2SA1036KR
MMST5086
MMST5088
2sa1037aks
ROHM marking AQ
2SD1781KR
MMST4124
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A14 marking SOT
Abstract: to-92 case connections MPSA DARLINGTON MPSA13 a13 marking sot23 sot-23 body marking A 4 MARKING R1n 432 sot23 A14 SOT23-5 MMBTA13
Text: MPSA13/14 / MMBTA13/14 NPN DARLINGTON TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA13 / MMBTA14 High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages A C TOP VIEW B C B E G E D H K Mechanical Data
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MPSA13/14
MMBTA13/14
MMBTA13
MMBTA14
OT-23
MPSA13
MPSA14
O-92/SOT-23,
MIL-STD-202,
OT-23
A14 marking SOT
to-92 case connections
MPSA DARLINGTON
a13 marking sot23
sot-23 body marking A 4
MARKING R1n
432 sot23
A14 SOT23-5
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Diode marking CODE R1j
Abstract: Diode marking CODE R1K Diode marking CODE R1M R1M 29 CD214A-R150 R1100 R1200 R1600
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lead free as standard RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R11600 Glass Passivated Rectifiers General Information
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CD214A-R150
R11600
DO-214AC
2002/95/EC
IPA0501
Diode marking CODE R1j
Diode marking CODE R1K
Diode marking CODE R1M
R1M 29
R1100
R1200
R1600
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Diode marking CODE R1K
Abstract: Diode marking CODE R1j 4 8 Diode marking CODE R1j
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R12000 Glass Passivated Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
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CD214A-R150
R12000
DO-214AC
Diode marking CODE R1K
Diode marking CODE R1j 4 8
Diode marking CODE R1j
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2N4401 EBC
Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K
Text: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.
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BC858BW
MPSA63
MPSA64
2N4401 EBC
marking 1F SMT3
marking r2k
MARKING G1.G
IC marking R2k
MMST8598
marking G3K
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sot83
Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions
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OCR Scan
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OT-23)
SC-59
SC-59/Japanese
-95-o
sot83
MARKING CODE R1C
marking r2k
IC marking R2k
R2C marking
marking r1c
SOT23 R2P
marking code R2C
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NPN CBO 40V CEO 25V EBO 5V
Abstract: MMST8598
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.
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OCR Scan
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OT-23)
200mA
SC-59/Japanese
SST1130
MMST1130
SST5088
MMST5088
100nA
50MHz
NPN CBO 40V CEO 25V EBO 5V
MMST8598
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SST4124
Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5
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OCR Scan
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OT-23)
SC-59
SC-59/Japanese
-95-o
GD1D47S
No100mA
50MHz
SST4124
SST5086
SST5089
R2F SOT-23
marking c33
MMSTA70
SOT-23 R2C
r1a SOT23
SSTA13
R2C marking
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part r1G
Abstract: SSTA14 14K140K SSTA05 MARKING C16 marking C33
Text: Transistors For Medium Power Amplification 60V 80V 80V ' f 0 @VCB Max. lOOnA 60V 4V 4V - hFE @lc & Min. Max. 100nA 80V < n m 60V o SSTA06 j MMSTA06 BV ceo Min. II SSTA05 " BVcbo Min. CO Part No. Package SST3 SMT3 100 10mA 1V 100 100mA 1V 100 10mA
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SSTA05
SSTA06
MMSTA06
100mA
100mA
500mA
500mA
100nA
100MHz
part r1G
SSTA14
14K140K
MARKING C16
marking C33
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transistor BF 506
Abstract: bf506 wl SOT-23
Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance
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OCR Scan
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569-GS
transistor BF 506
bf506
wl SOT-23
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marking r2k
Abstract: marking r1c GAJ SOT23 R1P SOT-223
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.
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OCR Scan
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OT-23)
SSTH30
MMST1130
SC-59/Japanese
BCX70K
BCX71G
BCX71H
BCX71J
BFS17
marking r2k
marking r1c
GAJ SOT23
R1P SOT-223
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sot23 marking code 8pf
Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V
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OCR Scan
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OT-23)
SC-59/Japanese
SST1130
MMST1130
200mA
SST5088
MMST5088
100nA
SST5089
sot23 marking code 8pf
marking r2k
R2Z SOT23
SSTA29
G1F G1K G3F
MARKING CODE B25 SOT23-5
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MMBTA13
Abstract: T1A SOT23 MMBTA14 MMBTA63 MMBTA64 MARKING R1n
Text: TRANSYS MMBTA13 / MMBTA14 ELECTRONICS NPN SURFACE MOUNT DARLINGTON TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23
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OCR Scan
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PDF
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MMBTA13
MMBTA14
MMBTA63
MMBTA64)
OT-23,
MIL-STD-202,
MMBTA14
OT-23
T1A SOT23
MMBTA64
MARKING R1n
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MMBTA13
Abstract: MMBTA14 MMBTA63 MMBTA64
Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M BTA63 / M M BTA64 Ideal for Medium Power Amplification and Switching
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OCR Scan
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MMBTA13
MMBTA14
MMBTA63
MMBTA64)
OT-23,
MIL-STD-202,
MMBTA14
OT-23
100mA,
MMBTA64
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Untitled
Abstract: No abstract text available
Text: MMBTA13 I MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M B TA 63 / M M BTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 •
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MMBTA13
MMBTA14
BTA64)
OT-23
IL-STD-202,
BTA14
ATA14
100mA,
100MHz
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MARKING R1n
Abstract: MMBTA13 MMBTA14 MMBTA63 MMBTA64
Text: MMBTA13 / MMBTA14 C O R P O R A T E NPN SURFACE MOUNT DARLINGTON TRANSISTOR D Features • • • • Epitaxial Planar Die Construction Com plem entary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Am plification and Switching High Current Gain
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OCR Scan
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PDF
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MMBTA13
MMBTA14
MMBTA63
MMBTA64)
OT-23,
MIL-STD-202,
MMBTA14
OT-23
MARKING R1n
MMBTA64
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ROHM Electronics 1n4004 52mm
Abstract: 1N4003 1N4001 silicon 1n4004 52mm R1N4001 N4001 1N4001 1N4002 1N4004 T-81
Text: IRHM T ñ S f i ' m O D DR Ol ? fiMT 1N4001 - l'rico' ''K ' ihm -1N4004/5 SEMICONDUCTORS ROHM ELECTRONICS 3034 Owen Drive, Antioch, TN 37013 - TEL: 615 641-2020 FAX:(615)641 -2022 . nn. Ä I Silicon Diffused Junction Glass-Sealed Rectifying Diodes APPLICATION
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4oofA-1N4004/?
DO-41
DO-41)
1N4001
1N4002
1N4003
1N4004
ROHM Electronics 1n4004 52mm
1N4001 silicon
1n4004 52mm
R1N4001
N4001
T-81
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDS125T s il ic o n e p it a x ia l p l a n a r d io d e ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small package : TS6. • Low forward voltage. • Fast reverse recovery time. • Small total capacitance. MAXIMUM RATING Ta=25°C
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KDS125T
100mA
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