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    MARKING R4 SOT343 Search Results

    MARKING R4 SOT343 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING R4 SOT343 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking r4 SOT343

    Abstract: marking bms
    Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)


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    PDF BGA427 25-Technologie EHA07378 marking r4 SOT343 marking bms

    BGA427

    Abstract: No abstract text available
    Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)


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    PDF BGA427 25-Technologie EHA07378 OT343 BGA427

    INFINEON marking BGA

    Abstract: BGA427 TRANSISTOR BI 185 BGA420
    Text: BGA427 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)


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    PDF BGA427 25-Technologie EHA07378 OT343 INFINEON marking BGA BGA427 TRANSISTOR BI 185 BGA420

    marking r4 SOT343

    Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
    Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1  Noise figure NF = 2.2 dB at 1.8 GHz


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    PDF BGA427 25-Technologie VPS05605 EHA07378 OT343 marking r4 SOT343 bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948

    transistor marking BMs

    Abstract: nf 948 95M-A
    Text: BGA 427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21 |2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21 |2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA)


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    PDF 25-Technologie VPS05605 EHA07378 OT-343 Nov-05-1999 transistor marking BMs nf 948 95M-A

    marking r4 SOT343

    Abstract: BGA427
    Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1  Noise figure NF = 2.2 dB at 1.8 GHz


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    PDF BGA427 25-Technologie VPS05605 EHA07378 OT343 Aug-02-2001 marking r4 SOT343 BGA427

    T 427 transistor

    Abstract: Q62702-G0067 transistor K 1352 marking r4 SOT343 95M-A BMS 13-81
    Text: BGA 427 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 18,5 dB at 1.8 GHz appl.1 gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA)


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    PDF 25-Technologie VPS05605 EHA07378 Q62702-G0067 OT-343 T 427 transistor Q62702-G0067 transistor K 1352 marking r4 SOT343 95M-A BMS 13-81

    transistor marking BMs

    Abstract: No abstract text available
    Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1  Noise figure NF = 2.2 dB at 1.8 GHz


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    PDF BGA427 25-Technologie VPS05605 EHA07378 OT343 transistor marking BMs

    pin diagram for IC 7476

    Abstract: datasheet and pin diagram of IC 7476 IC 7476 datasheet ic 7476 pin diagram 7476 data sheet sot 23-5 marking code CO2 IC 7476 transistor bf 425 VPS05605 7476
    Text: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data • Multifunctional casc. 50 Ω block LNA / MIX 4 • Unconditionally stable • Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (appl.2) 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)


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    PDF 25-Technologie VPS05605 EHA07371 Jul-14-1998 pin diagram for IC 7476 datasheet and pin diagram of IC 7476 IC 7476 datasheet ic 7476 pin diagram 7476 data sheet sot 23-5 marking code CO2 IC 7476 transistor bf 425 VPS05605 7476

    ATF-54143-BLKG

    Abstract: ATF54143 a 1458 atf-54143-tr1g diagram transistor tt 2140 ATF-54143BLKG L6 sot 665 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


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    PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT343 SC-70) 5989-3751EN AV01-0620EN ATF-54143-BLKG a 1458 atf-54143-tr1g diagram transistor tt 2140 ATF-54143BLKG L6 sot 665 l0746

    ATF-54143 application notes

    Abstract: 5989-0034EN TRANSISTOR noise figure measurements A004R ATF-54143 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 sot-343 as sot 23 marking code R4
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz


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    PDF ATF-54143 OT-343 ATF-54143 SC-70 OT-343) 5989-0034EN 5989-1922EN ATF-54143 application notes 5989-0034EN TRANSISTOR noise figure measurements A004R ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 sot-343 as sot 23 marking code R4

    marking 4FX

    Abstract: ATF-54143 application notes AV02-0488EN
    Text: ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic package.


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    PDF ATF-54143 ATF-54143 SC-70 OT-343) OT343 SC-70) AV01-0620EN AV02-0488EN marking 4FX ATF-54143 application notes

    l0746

    Abstract: Curtice PHEMT marking code a SOT c5 87 RHO marking transistor datasheet s parameters noise ATF-54143 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


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    PDF ATF-54143 OT-343 SC-70) Descripti048 5988-0450EN 5988-2722EN l0746 Curtice PHEMT marking code a SOT c5 87 RHO marking transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2

    RGS 13/1

    Abstract: ATF-54143 application notes Curtice LNA MARKING 4F PHEMT marking code a SOT c5 87 marking code 4f, package soT-343 zo 107 atf-54143-tr1g ATF-54143
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz


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    PDF ATF-54143 OT-343 ATF-54143 SC-70 OT-343) 5989-1922EN 5989-3751EN RGS 13/1 ATF-54143 application notes Curtice LNA MARKING 4F PHEMT marking code a SOT c5 87 marking code 4f, package soT-343 zo 107 atf-54143-tr1g

    marking r4 SOT343

    Abstract: a 1458 ATF54143 L6 sot 665 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


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    PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT343 SC-70) AV01-0620EN AV02-0488EN marking r4 SOT343 a 1458 L6 sot 665 l0746

    5989-0034EN

    Abstract: ATF-54143 application notes marking 4FX ATF-54143 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 LNA MARKING 4F GDFW sot 23 marking code R4
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz


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    PDF ATF-54143 OT-343 ATF-54143 SC-70 OT-343) 5988-8408EN 5989-0034EN 5989-0034EN ATF-54143 application notes marking 4FX ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 LNA MARKING 4F GDFW sot 23 marking code R4

    ATF-54143 application notes

    Abstract: Curtice PHEMT marking code a SOT c5 87 transistor C013 transistor 4F LNA RHO marking transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


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    PDF ATF-54143 OT-343 SC-70) 5988-2722EN 5988-6275EN ATF-54143 application notes Curtice PHEMT marking code a SOT c5 87 transistor C013 transistor 4F LNA RHO marking transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1

    l0746

    Abstract: Transistor TT 2246 marking 4F sot-343 RD40 ATF54143 R11450 transistor c011 LNA MARKING 4F
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


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    PDF ATF-54143 SC-70 OT-343) OT-343 SC-70) 5988-0450EN l0746 Transistor TT 2246 marking 4F sot-343 RD40 ATF54143 R11450 transistor c011 LNA MARKING 4F

    LNA MARKING 4F

    Abstract: Curtice A004R ATF-54143 atf-54143-blkg MW725 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


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    PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT-343 OT343 SC-70) AV01-0620EN AV02-0488EN LNA MARKING 4F Curtice A004R atf-54143-blkg MW725 l0746

    bfp740

    Abstract: what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT
    Text: Technical Report, 2008-Nov-21 Technical Report BFP740 LNA for 3.5GHz WiMax Application Technical Report TR104 Device: BFP740 Application: LNA for 3.5 GHz WiMax Application Revision: Rev. 1.0 Date:


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    PDF 2008-Nov-21 BFP740 TR104 BFP740 what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT

    ATF-54143 application notes

    Abstract: transistor 4F LNA Curtice ATF-54143 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 sot-343 as marking R5 sc-70
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


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    PDF ATF-54143 OT-343 SC-70) Descripti57 5988-6275EN 5988-8408EN ATF-54143 application notes transistor 4F LNA Curtice ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 sot-343 as marking R5 sc-70

    4066 spice model

    Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
    Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ


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    PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900

    Transistor TT 2246

    Abstract: TT 2246 transistor transistor 4F LNA ATF-54143 application notes PHEMT marking code a o2nf ATF-54143 ATF-54143-TR1 marking 4F sot-343
    Text: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications


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    PDF ATF-54143 ATF-54143 SC-70 OT-343) OT-343 SC-70) 5988-0450EN 88759/06-PM60J-01 Transistor TT 2246 TT 2246 transistor transistor 4F LNA ATF-54143 application notes PHEMT marking code a o2nf ATF-54143-TR1 marking 4F sot-343

    4066 spice model

    Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
    Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor


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    PDF MBC13900/D MBC13900 MBC13900T1 OT-343) OT-343 MBC13900 SC-70 318M-01, 4066 spice model marking r4 SOT343 RF LNA" 1 to 2 GHz" spice