IEC-286-6
Abstract: ceramic capacitor 68 pF 100v recommended land pattern for 0402 cap marking RAC 81 CROSS KEMET
Text: CERAMIC CAPACITOR ARRAY FEATURES • • Four individual capacitors inside one 1206 monolithic structure Saves board and inventory space One placement instead of four - less costly • • • Easier to handle and solder than 4 smaller chips Tape and reel per EIA 481-1
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English000
EIA-198
IEC-286-6
ceramic capacitor 68 pF 100v
recommended land pattern for 0402 cap
marking RAC 81
CROSS KEMET
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FMP-PRT-VERT
Abstract: AWG20 E35688 lexan .500 kluber grease lf 44 22 MBD460 ERSIN SOLDER kluber PPO NORYL vo
Text: Philips Components Product specification Focus Metal-glaze Preset FMP , Vertical type (VERT) FMP-PRT-VERT FEATURES • Designed for mounting on to a printed-circuit board • High temperature and voltage stability • Wide design freedom. APPLICATIONS handbook, 4 columns
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CCA501
PRV-53-8-52/45:
PRV-53-8-52/48
FMP-PRT-VERT
AWG20
E35688
lexan .500
kluber grease lf 44 22
MBD460
ERSIN SOLDER
kluber
PPO NORYL vo
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bosch al 60 dv
Abstract: lubriflon DEUTSCH DT04-2P bosch al 2450 dv iso vg 46 iso VG-10 bosch 0 261 200 160 BOSCH 0 261 230 BOSCH 0 261 210 330 bosch al 60 dv 14
Text: Flow Diverters Deviatori di flusso The Drive & Control Company RIE 00158/01.06 Oleodinamica LC s.r.l. Compact Directional Valves The Drive & Control Company Product Program Programma Prodotti - Flow Diverters - Deviatori di Flusso RIE 00158 - Modular Directional Valves
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Dow Corning 744 RTV
Abstract: Dow Corning RTV Silicone Dow Corning RTV 744 Silicone e35688 MRC298 MBD172 K1764 sumitomo epoxy multicore solder wire
Text: Philips Components Product specification Focus Metal-glaze Preset FMP , SLD-Slot type focus units FMP-SLD FEATURES • Designed for integration in a high voltage unit • High temperature and voltage stability handbook, 4 columns • Wide design freedom.
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PRV-53-8-52/45:
PRV-53-8-52/48
Dow Corning 744 RTV
Dow Corning RTV Silicone
Dow Corning RTV 744 Silicone
e35688
MRC298
MBD172
K1764
sumitomo epoxy
multicore solder wire
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1206-103
Abstract: kemet capacitor C0603 J 709 821 ceramic capacitor KD 472 M kemet C0805 1206 fuse FD kc 472 752 J 1600 V CAPACITOR C1206 KEMET packaging
Text: INDEX SOLID TANTALUM CHIP CAPACITORS PAGE GENERAL PERFORMANCE T491 SERIES — INDUSTRIAL GRADE .15-19
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CWR11
MIL-PRF-55365/8.
EIA-198
1206-103
kemet capacitor C0603
J 709
821 ceramic capacitor
KD 472 M
kemet C0805
1206 fuse FD
kc 472
752 J 1600 V CAPACITOR
C1206 KEMET packaging
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Untitled
Abstract: No abstract text available
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Ceramic chips consist of formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed on opposite edges of the laminated structure. The entire structure is then fired at high temperature to
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EIA-198
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4041CIZADJ
Abstract: 4041E IZ1.2 marking R1E SC-70 marking R1E LM4041 spice marking R1d rad sot-23 marking LM4041DEM3 LM4041DEM3-ADJ 4041CIZ-ADJ
Text: LM4041 Precision Micropower Shunt Voltage Reference General Description Key Specifications LM4041-1.2 Ideal for space critical applications, the LM4041 precision voltage reference is available in the sub-miniature SC70 and SOT-23 surface-mount packages. The LM4041’s advanced
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LM4041
OT-23
LM4041-1
LM4041-ADJ.
AN-1002:
4041CIZADJ
4041E IZ1.2
marking R1E SC-70
marking R1E
LM4041 spice
marking R1d
rad sot-23 marking
LM4041DEM3
LM4041DEM3-ADJ
4041CIZ-ADJ
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W468
Abstract: KEMET MLCC rework
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Ceramic chips consist of formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed on opposite edges of the laminated structure. The entire structure is then fired at high temperature to
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EIA-198
W468
KEMET MLCC rework
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jrc 324d
Abstract: lv 5682 SEI resistor RC-2609A RMC 2 pin jumpers nsp120 jrc2690a 217.002 250V 2A 2609A sei smd resistors
Text: SEI Electronics - Company Profile • A Little History . . . SEI Electronics started manufacturing resistors in 1928, as part of the Stackpole Carbon Company in St. Mary’s Pennsylvania. To this day, SEI continues to focus on resistor products – and nothing else.
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8116400A
Abstract: 8116400
Text: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ March 1995 Edition 3.0 PRODUCT PROFILE SHEET MB8116400A-50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM
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MB8116400A-50/-60/-70
MB8116400A
8116400A
8116400
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MB814400C-60
Abstract: 814400s MB814400C60
Text: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ April 1996 Edition 2.1 PRODUCT PROFILE SHEET MB814400C-60/-70 CMOS 1M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB814400C-60/-70
MB814400C
MB814400C-60
814400s
MB814400C60
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B 103 K ceramic capacitor
Abstract: capacitor 2200 micro farad 25V KEMET MLCC rework dg sn60 202 7201 EB capacitor F-2103 3225 275 C1206 KEMET capacitor 2200 micro farad 35V
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to
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EIA-198
B 103 K ceramic capacitor
capacitor 2200 micro farad 25V
KEMET MLCC rework
dg sn60
202 7201
EB capacitor
F-2103
3225 275
C1206 KEMET
capacitor 2200 micro farad 35V
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821 ceramic capacitor
Abstract: J 709 F-2100 F-2102 F-2103 F-2105 4470K
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to
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EIA-198
821 ceramic capacitor
J 709
F-2100
F-2102
F-2103
F-2105
4470K
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C1005 kemet
Abstract: No abstract text available
Text: CERAMIC CHIP/STANDARD KEMET FEATURES • • • • • Twelve chip sizes COG NPO , X7R, Z5U and Y5V Dielectrics 10, 16, 25,50, 100 and 200 Volts Standard End Metalization-tin-plated nickel barrier Available Capacitance Tolerance: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±3%; ±5%; ±10%;
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EIA481-1.
IEC286-6
C1005 kemet
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IC1232
Abstract: c4742 c1813 C4722 MC2212 C1B25 C2792 C-829 capacitor c829 capacitor 1C9
Text: KEMET CERAMIC CHIP/STANDARD FEATURES • • • • • Twelve chip sizes COG NPO , X7R, Z5U and Y5V Dielectrics 10, 16, 25, 50, 100 and 200 Volts Standard End Metalization-tin-plated nickel barrier Available Capacitance Tolerance: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1 %; ±2%; ±3%; ±5%; ±10%;
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EIA481
IEC286-6
008tape
IL-C-55681
IC1232
c4742
c1813
C4722
MC2212
C1B25
C2792
C-829
capacitor c829
capacitor 1C9
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PE30 PC30
Abstract: No abstract text available
Text: MODEL PE30 Cermet Potentiometers VISH A Y W. Military and Professional Grade Fully Sealed Container FEATURES • 3.0 watts at + 70°C. • High power rating. • Low temperature coefficient. • Excellent stability. • Fully sealed. • Low contact resistance variation.
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200kQ
PE30 PC30
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Untitled
Abstract: No abstract text available
Text: M O DEL P E 30 C e rm e t P o te n tio m e te rs M ilita r y a n d P ro fe s s io n a l G ra d e F u lly S e a le d C o n ta in e r FEA TU R ES • • • • • • • • 3.0 watts at + 70‘ C High power rating Low temperature coefficient Excellent stability
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200kU
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Untitled
Abstract: No abstract text available
Text: ítB 1 6 1933 August 1992 Edition 2 .0 A _ DATA S H E E T f u j Ît s u : M B 8 14 2 6 0 A - 70/-80/-10 CMOS 256K x 16 Bits Fast Page Mode Dynamic RAM The Fujitsu M B 814260A is a fully decoded C M O S Dynamic RAM D R A M that contains 4 ,1 9 4 ,3 0 4 memory cells accessible in 1 6 -or 8-bit increments. The M B 814260A features a
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14260A
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MB81417
Abstract: marking 10-16
Text: FEB i 6 1993 August 1992 Edition 2.0A fu J it su — DATASHEET MB814170A-70/-80/-10 CMOS 256K x 16 Bits Fast Page Mode Dynamic RAM The Fujitsu M B 814170A is a fully decoded C M O S Dynamic RAM D R A M that contains 4 ,1 9 4 ,3 0 4 memory cells accessible in 16- or 8-bit increments. The M B 814 1 70A features a
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MB814170A-70/-80/-10
14170A
MB81417
marking 10-16
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Untitled
Abstract: No abstract text available
Text: MICR ON S E M I C O N D U C T O R INC b3E D DRAM. . blUSHi 0 0 0 7 ^ 4 0 81b M M R N MT8D48 4 MEG X 8 DRAM MODULE |U|C=RON _ _ _ _ _ _ • 4 MEG x 8 DRAM FAST-PAGE-MODE MT8D48 _ MODULE IV IV /W U L b LOW POWER, EXTENDED EXTENDEDRE REFRESH (MT8D48 L) FEATURES
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MT8D48
MT8D48)
MT8D48
30-pin
800mW
024-cycle
A0-A10
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814260-60
Abstract: 814260 MB 814260 MB81
Text: March 1995 Edition 5.0 FUJITSU PRODUCT PROFILE SHEET MB 814260 - 60/-70 CMOS 256KX 16 BIT FAST PAGE MODE DYNAMIC RAM CM O S 262,144 x 16 bit Fast Page M ode Dynamic RAM The Fujitsu MB814260 is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304
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256KX
MB814260
512x16--
B814260-60/-70
814260-60
814260
MB 814260
MB81
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC8M8E1/B6 MEG X 8 DRAM |U |I C = R O N 8 DRAM 8 MEG X 8 DRAM 3.3V, FAST PAGE MODE FEATURES • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)
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096-cycle
32-Pin
MT4LC8M8E1/56
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1024x8 memory
Abstract: No abstract text available
Text: PRELIMINARY 8 MEG x 8 EDO DRAM l^ ic iR o r s j MT4LC8M8P4 MT4LC8M8C2 DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 12 row, 11 column addresses C2 or 13 row, 10 column addresses (P4)
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096-cycle
32-Pin
1024x8 memory
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Untitled
Abstract: No abstract text available
Text: m i c r o n • 4 ’ 8 MEG x 3 6 ECC-OPTIMIZED DRAM SIMMs TFf.HNOI ocv. INC. MT9D436 X MT18D836 X DRAM MODULE FEATURES PIN ASSIGNMENT Front View • Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) • 16MB (4 Meg x 36) and 32MB (8 Meg x 36)
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MT9D436
MT18D836
72-pin,
048-cycle
72-pin
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