Transistor BFR 67
Abstract: No abstract text available
Text: BFR 183 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: RH Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter
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D-74025
Transistor BFR 67
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TO 92 leadframe
Abstract: No abstract text available
Text: Data Sheet LEADFRAME TO-92 Test Services ● Program generation/conversion ● Wafer probe ● Burn-in ● -55°C to +165°C test available ● Strip test available Transistor Outline TO-92 TO-92 is a leadframe based, plastic encapsulated package that is well suited for applications requiring optimum
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DS583A
TO 92 leadframe
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4.7 20V
Abstract: 1D104
Text: SS-212 R1 Chip Tantalum Solid Electrolytic Capacitor Type TMU CERTIFIED 1. General 1-1 Scope of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications in transistorized circuits of electronic devices.
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SS-212
4.7 20V
1D104
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
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2SC3357
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smd rf transistor marking
Abstract: 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA RE smd 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor
Text: IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
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2SC3357
smd rf transistor marking
2SC3357 SMD
smd transistor marking RE
transistor 2SC3357
10 ghz transistor
smd transistor marking GA
RE smd
2SC3357
RF TRANSISTOR 10 GHZ low noise
marking rh transistor
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EN6029
Abstract: photoreflector SPI-335-34
Text: Ordering number : EN6029 Infrared LED SPI-335-34 SPI-335-34 Ultraminiature photoreflector single-transistor type Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm • Visible light cut type
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EN6029
SPI-335-34
EN6029
photoreflector
SPI-335-34
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EN6029
Abstract: SPI-335-34 26M4 L35mm
Text: Ordering number : EN6029 Infrared LED SPI-335-34 SPI-335-34 Ultraminiature photoreflector single-transistor type Features • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm • Visible light cut type
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EN6029
SPI-335-34
EN6029
SPI-335-34
26M4
L35mm
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2SK3321
Abstract: 2SK332
Text: TOSHIBA TENTATIVE 2SK3321 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3321 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • • • Small Package High Input Impedance : Iq SS = —1 nA Max. (Vq s = —30 V)
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2SK3321
2SK3321
2SK332
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D1626
Abstract: 2SB1126
Text: O rd e rin g n u m b e r: EN 1721A No.1721A S A \Y O J 2SB1126/2SD1626 PNP/NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications . Relay drivers, hammer drivers, lamp drivers, motor drivers. Features . High DC current gain 4000 or greater .
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2SB1126/2SD1626
2SB1126
250mm¿
HH1I26
2SB1126/2S
D1626
D1626
2SB1126
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2SC4738
Abstract: 2SA1832
Text: TO SH IBA 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.) Excellent hjpg Linearity
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2SC4738
150mA
2SA1832
2SC4738
2SA1832
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SK1875 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 875 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS 2.1 ± 0.1 AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 1.25 ± 0.1 AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • 3-
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2SK1875
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU Unit in mm POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • • • Small Package Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @VQg : Ron = 4.0 O Max. (@VGS
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SSM3J05FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ346 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ346 ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V ^ ——0.5~ —1.5V • High Speed w Small Package • Complementary to 2SK1829 MAXIMUM RATINGS Ta = 25°C
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2SJ346
2SK1829
ResistanJ346
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR m t v SILICON P CHANNEL MOS TYPE i r * HIGH SPEED SWITCHING APPLICATIONS ANAROG SWITCH APPLICATIONS • • w • Low Threshold Voltage : V ^ ——0.5~ —1.5V High Speed Small Package Complementary to 2SK1830
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2SJ347
2SK1830
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL JUNCTION TYPE 1 1 • m. ■ ■ FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. • • Low Noise Figure : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)
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2SK211
100MHz)
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N3G01J
Abstract: HN3G01J EG160
Text: TOSHIBA HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N3G01J HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS AUDIO FREQUENCY AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C
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HN3G01J
N3G01J
N3G01J
HN3G01J
EG160
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2SK2145
Abstract: No abstract text available
Text: TO SH IBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. + 0.2 • . • • • Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfc| : |Yfc| = 15mS (Typ.) at VDS = 10V, VGS = 0
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2SK2145
--50V
--30V
2SK2145
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2SD1618
Abstract: 2SB1118 PF140S
Text: Ordering num ber:EN 1784B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,
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1784B
2SB1118/2SD1618
2SB1118
2SD1618
PF140S
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2sj511
Abstract: No abstract text available
Text: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. -*J-*
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2SJ511
2sj511
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2SC2715
Abstract: No abstract text available
Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. + 0.5
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2SC2715
2SC2715
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2SK2662
Abstract: No abstract text available
Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(O N )- 1.350 (Typ.)
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2SK2662
2SK2662
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transistor con HFE 400
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 .6 - 0 .1 3- Ql : • High Voltage and High Current
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HN1B01F
150mA
CL25L
HN1B01F
transistor con HFE 400
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2SJ511
Abstract: marking zf 2I k
Text: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX.
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2SJ511
2SJ511
marking zf
2I k
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2SC3122
Abstract: No abstract text available
Text: TO SH IBA 2SC3122 2 S C 3 1 22 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics
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2SC3122
200MHz)
2SC3122
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