Si1901DL
Abstract: D234
Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability
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Si1901DL
OT-363
SC-70
S-01886--Rev.
28-Aug-00
D234
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Si1902DL SOT-363
Abstract: marking code pa Si1902DL "marking code PA"
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
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Si1902DL
OT-363
SC-70
S-21374--Rev.
12-Aug-02
Si1902DL SOT-363
marking code pa
"marking code PA"
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Si1901DL
Abstract: vishay siliconix code marking
Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability
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Si1901DL
OT-363
SC-70
18-Jul-08
vishay siliconix code marking
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Untitled
Abstract: No abstract text available
Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability
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Si1902DL
OT-363
SC-70
S-99185--Rev.
01-Nov-99
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Si1900DL
Abstract: No abstract text available
Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability
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Si1900DL
OT-363
SC-70
S-02367--Rev.
23-Oct-00
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Untitled
Abstract: No abstract text available
Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability
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Si1901DL
OT-363
SC-70
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
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Si1902DL
OT-363
SC-70
S-03969--Rev.
28-May-01
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71080
Abstract: Si1902DL
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
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Si1902DL
OT-363
SC-70
S-20880--Rev.
10-Jun-02
71080
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Untitled
Abstract: No abstract text available
Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability
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Si1900DL
OT-363
SC-70
S-01458--Rev.
10-Jul-00
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Si1900DL
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code
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Si1900DL
OT-363
SC-70
S-21374--Rev.
12-Aug-02
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71080
Abstract: Si1902DL SOT-363 Si1902DL
Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability
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Si1902DL
OT-363
SC-70
S-02367--Rev.
23-Oct-00
71080
Si1902DL SOT-363
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Si1906DL
Abstract: No abstract text available
Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code
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Si1906DL
OT-363
SC-70
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code
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Si1906DL
OT-363
SC-70
08-Apr-05
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Si1906DL
Abstract: No abstract text available
Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code
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Si1906DL
OT-363
SC-70
S-01885--Rev.
28-Aug-00
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CSH210
Abstract: No abstract text available
Text: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!
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CSH210
OT363
Q62705K
OT363
30dbm
CSH210
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MARKING CODE pab
Abstract: No abstract text available
Text: NEW PRODUCT DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage VGS TH <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMP2004DWK
AEC-Q101
OT-363
DS30940
MARKING CODE pab
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Untitled
Abstract: No abstract text available
Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
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DMN66D0LDW
OT363
AEC-Q101
DS31232
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CSH210
Abstract: No abstract text available
Text: CSH210 • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No Supply Voltage Needed • Positive Control Voltage • SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!
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CSH210
OT363
Q62705K
OT363
30dbm
CSH210
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Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKS
OT363
SC-88)
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
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2N7002DWA
OT363
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the
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2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
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Dual N-Channel mosfet sot-363
Abstract: marking code k7k DMN601DWK DMN601DWK-7 marking code k7k transistor
Text: DMN601DWK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-363 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Min Max A 0.10 0.30
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DMN601DWK
OT-363
DMN601DWK-7
3000/Tape
com/datasheets/ap02007
DS30656
Dual N-Channel mosfet sot-363
marking code k7k
DMN601DWK
DMN601DWK-7
marking code k7k transistor
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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2N7002DWA
OT363
AEC-Q101
DS36120
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