marking sb diode
Abstract: ZHCS400
Text: ZHCS400 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE PINNING Features PIN • Low VF • High current capability • Miniature surface mount package DESCRIPTION 1 Cathode 2 Anode 2 1 Applications: • DC-DC converters • Mobile telecom SB Top View Marking Code: "SB"
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ZHCS400
OD-323
100us
500mA
500mA
OD-323
marking sb diode
ZHCS400
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marking code SB
Abstract: ZHCS400 marking sb diode
Text: ZHCS400 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE Features • Low VF • High current capability • Miniature surface mount package PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • DC-DC converters • Mobile telecom SB Top View Marking Code: "SB"
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ZHCS400
OD-323
OD-323
marking code SB
ZHCS400
marking sb diode
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marking sb diode
Abstract: 0615 s2hbb diode B 4A diode schottky 5 A SMB case
Text: DSB 2 I 60 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 60 SB (S2HBB) 60 V 2A 0.52 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AA)
marking sb diode
0615
s2hbb
diode B 4A
diode schottky 5 A SMB case
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marking sb diode
Abstract: diode schottky 5 A SMB case 0615 S2FB 40V2A
Text: DSB 2 I 40 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 40 SB (S2FBB) 40 V 2A 0.42 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AA)
marking sb diode
diode schottky 5 A SMB case
0615
S2FB
40V2A
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marking sb diode
Abstract: diode avalanche DSA diode schottky 5 A SMB case
Text: DSA 2 I 100 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSA 2 I 100 SB (S2KAB) 100 V 2A 0.65 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AA)
marking sb diode
diode avalanche DSA
diode schottky 5 A SMB case
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SB220-G
Abstract: SB245-G SB250-G SB260-G SB280-G SB2100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring .107(2.7) .080(2.0) -High surge current capability
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SB220-G
SB2100-G
DO-41
UL94-V0
MIL-STD-750
SB240
SB245
SB250
SB260
SB245-G
SB250-G
SB260-G
SB280-G
SB2100-G
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SB320-G
Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)
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SB320-G
SB3100-G
DO-201AD
UL94-V0
MIL-STD-750
45B-G
SB350B-G
SB360B-G
SB380B-G
SB345-G
SB350-G
SB360-G
SB380-G
SB3100-G
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability 1.0 25.4 Min.
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SB120-G
SB1100-G
DO-41
UL94-V0
MIL-STD-750
SB140
SB145
SB150
SB160
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. .107(2.7) .080(2.0) -High surge current capability
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SB220-G
SB2100-G
DO-41
UL94-V0
MIL-STD-750
SB240
SB245
SB250
SB260
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SB120-G
Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. -High surge current capability
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SB120-G
SB1100-G
DO-41
UL94-V0
MIL-STD-750
cathode20
SB140
SB145
SB150
SB145-G
SB150-G
SB160-G
SB180-G
SB1100-G
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)
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SB320-G
SB3100-G
DO-201AD
UL94-V0
MIL-STD-750
SB350B-G
SB360B-G
SB380B-G
SB3100B-G
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SB550-G
Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)
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SB520-G
SB5100-G
DO-201AD
UL94-V0
MIL-STD-750
45B-G
SB550B-G
SB560B-G
SB580B-G
SB550-G
SB545-G
SB560-G
SB580-G
SB5100-G
5100G
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B360E
SB380E
SB3100E
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SB320E-G
Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B360E
SB380E
SB3100E
SB345E-G
SB350E-G
SB360E-G
SB380E-G
SB3100E-G
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB520E-G
SB5100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
Method60E
SB580E
SB5100E
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SB545E-G
Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB520E-G
SB5100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B560E
SB580E
SB5100E
SB545E-G
SB550E-G
SB560E-G
SB580E-G
SB5100E-G
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SB545
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)
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SB520-G
SB5100-G
DO-201AD
UL94-V0
MIL-STD-750
SB550B-G
SB560B-G
SB580B-G
SB5100B-G
SB545
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Untitled
Abstract: No abstract text available
Text: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the
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LM185-2
LM285-2
LM385-2
SNVS743D
5-N/LM285-2
5-N/LM385-2
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Untitled
Abstract: No abstract text available
Text: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the
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LM185-2
LM285-2
LM385-2
SNVS743D
5-N/LM285-2
5-N/LM385-2
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BZ-12
Abstract: No abstract text available
Text: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N www.ti.com SNVS742E – JANUARY 2000 – REVISED APRIL 2013 LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N FEATURES 1 • • • • •
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LM185-1
LM285-1
LM385-1
SNVS742E
2-N/LM285-1
2-N/LM385-1
BZ-12
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LM385n
Abstract: No abstract text available
Text: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the
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LM185-2
LM285-2
LM385-2
SNVS743D
5-N/LM285-2
5-N/LM385-2
LM385n
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Untitled
Abstract: No abstract text available
Text: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the
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LM185-2
LM285-2
LM385-2
SNVS743D
5-N/LM285-2
5-N/LM385-2
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marking Z2 sot23
Abstract: No abstract text available
Text: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the
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LM185-2
LM285-2
LM385-2
SNVS743D
5-N/LM285-2
5-N/LM385-2
marking Z2 sot23
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Untitled
Abstract: No abstract text available
Text: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N www.ti.com SNVS742E – JANUARY 2000 – REVISED APRIL 2013 LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N FEATURES 1 • • • • •
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LM185-1
LM285-1
LM385-1
SNVS742E
2-N/LM285-1
2-N/LM385-1
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