AS179-92
Abstract: 13MHZ NDK MC13180 MC13180FC MC71000 MC9328MX1 QFN-48 transmitter lut gfsk
Text: Technical Data MC13180/D Rev. 0, 11/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package MC13180FC MC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the
|
Original
|
MC13180/D
MC13180
QFN-48)
MC13180FC
QFN-48
MC13180
AS179-92
13MHZ NDK
MC13180FC
MC71000
MC9328MX1
QFN-48
transmitter lut gfsk
|
PDF
|
PC1318
Abstract: BIPOLAR MOTOROLA 2N J1 TRANSISTOR DIODE SOT-23 PACKAGE PC13180FC 13MHZ NDK MARKING 12p SOT-23 RF loop antenna 13Mhz transistor marking code 7E SOT-23 MC13180 MC71000
Text: Product Preview MC13180PP/D Rev. 2, 08/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package PC13180FC PC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the
|
Original
|
MC13180PP/D
MC13180
QFN-48)
PC13180FC
QFN-48
MC13180
PC1318
BIPOLAR MOTOROLA 2N
J1 TRANSISTOR DIODE SOT-23 PACKAGE
PC13180FC
13MHZ NDK
MARKING 12p SOT-23
RF loop antenna 13Mhz
transistor marking code 7E SOT-23
MC71000
|
PDF
|
st marking c4 diode DO-214AB
Abstract: 1N4007 SMB l3lx 1N4007 definitions 1N4007 tvs SMC MARKING ipc SMB SMC LNBTVS3-220U LNBTVS4-220S LNBTVS4-222S
Text: LNBTVS Transil for low noise block protection Features • Peak pulse power: – up to 3 kW 10/1000 µs – up to 22.5 kW (8/20 µs) ■ Breakdown voltage range: from 23.1 V to 30 V ■ Low clamping factor ■ Unidirectional with low VF (VF = 1.2 V at 3 A)
|
Original
|
DO-214AB)
DO-214AA)
st marking c4 diode DO-214AB
1N4007 SMB
l3lx
1N4007 definitions
1N4007
tvs SMC MARKING
ipc SMB SMC
LNBTVS3-220U
LNBTVS4-220S
LNBTVS4-222S
|
PDF
|
st marking c4 diode DO-214AB
Abstract: ipc SMB SMC tvs SMC MARKING C4 1N4007 SMB LNBTVS6-221S Package and Packing Information ST SMC tvs SMC MARKING Transil smc LNBH23 Diode SMB marking code 14
Text: LNBTVS Transil for low noise block protection Features • Peak pulse power: – up to 3 kW 10/1000 µs – up to 22.5 kW (8/20 µs) ■ Breakdown voltage range: from 23.1 V to 30 V ■ Low clamping factor ■ Unidirectional with low VF (VF = 1.2 V at 3 A)
|
Original
|
DO-214AB)
DO-214AA)
st marking c4 diode DO-214AB
ipc SMB SMC
tvs SMC MARKING C4
1N4007 SMB
LNBTVS6-221S
Package and Packing Information ST SMC
tvs SMC MARKING
Transil smc
LNBH23
Diode SMB marking code 14
|
PDF
|
st marking c4 diode DO-214AB
Abstract: tvs SMC MARKING C4
Text: LNBTVS Transil for low noise block protection Datasheet - production data Description A K SMC JEDEC DO-214AB A K SMB (JEDEC DO-214AA) Features The LNBTVS series has been designed to protect LNB voltage regulators in satellite set top boxes against electrostatic discharges according to
|
Original
|
DO-214AB)
DO-214AA)
DocID17882
st marking c4 diode DO-214AB
tvs SMC MARKING C4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LNBTVS Transil for low noise block protection Features • Peak pulse power: – up to 3 kW 10/1000 µs – up to 22.5 kW (8/20 µs) ■ Breakdown voltage range: from 23.1 V to 30 V ■ Low clamping factor ■ Unidirectional with low VF (VF = 1.2 V at 3 A)
|
Original
|
|
PDF
|
1N4007 SMB
Abstract: st marking c4 diode DO-214AB LNBH23L Package and Packing Information ST SMC unidirectional tvs diode st smb MARKING 304s tvs SMC MARKING
Text: LNBTVS Transil for low noise block protection Features • Peak pulse power: – up to 3 kW 10/1000 µs – up to 22.5 kW (8/20 µs) ■ Breakdown voltage range: from 23.1 V to 30 V ■ Low clamping factor ■ Unidirectional with low VF (VF = 1.2 V at 3 A)
|
Original
|
DO-214AB)
DO-214AA)
1N4007 SMB
st marking c4 diode DO-214AB
LNBH23L
Package and Packing Information ST SMC
unidirectional tvs diode st smb
MARKING 304s
tvs SMC MARKING
|
PDF
|
TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
|
OCR Scan
|
B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
|
PDF
|
GPI048
Abstract: upd3 PD30111
Text: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C
|
OCR Scan
|
uPD30111
ns/20
GPI048
upd3
PD30111
|
PDF
|
diode marking YF
Abstract: C 5388 T460 t930 marking A46 erc12 diode ERC12 T151 T760 T810
Text: ERC12 i .2A — • # » ■* » : Outline Drawings GENERAL USE RECTIFIER DIODE ■ 4 # « : Features • ■0— Hi gh surge current • 'J vjK , ISM • S fflfit t Compact size, lightweight H S iT F • Marking High reliability * 7 “ a - K :* Color code : Green
|
OCR Scan
|
ERC12
eBTS3083^
clifc83Â
I95t/R89
Shl50
diode marking YF
C 5388
T460
t930
marking A46
erc12 diode
T151
T760
T810
|
PDF
|
CCD GFT
Abstract: ERD31 SS53 40114 JD51
Text: ERD31 i.5A t> £ : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current H igh voltage by mesa design 'M is ttte •h ' j — Y - j - 0 High reliability 031-04 , (-«HtflE* i ±W : f t ] ■T«J lOfl-Q. Hfl-«. I2A- : Applications ■■Œî'9^
|
OCR Scan
|
ERD31
CCD GFT
ERD31
SS53
40114
JD51
|
PDF
|
TR MARKING CODE K4N
Abstract: DIODE MARKING CODE K4N TTS-03
Text: E R A 1 7 I 1 .OA : Outline Drawings G E N E R A L U SE RECTIFIER DIODE • # € : ■ Features • flg'J'M &fclfc, b m m & y ? § A#1 ' «TSi Ultra small package, possible for 5mm pitch automatic insertion. • S im S tt High reliability lil/jv : Marking
|
OCR Scan
|
ETi30
I95t/R89)
TR MARKING CODE K4N
DIODE MARKING CODE K4N
TTS-03
|
PDF
|
mark AT0
Abstract: ERA15 T151 T810 AT-05 general purpose diode marking code -06 general purpose diode marking code -08
Text: ERA15 1 .OA Outline Drawings GENERAL USE RECTIFIER DIODE * Features • f c / J '8 M c fc *> , 5 m e 7 f m 3 T O Ultra small package, possible for 5mm pitch automatic IS iT F • Marking insertion. • Sif&IRte High reliability A 7 - 3- K : Ö Color code : White
|
OCR Scan
|
ERA15
19S24
95t/R89)
mark AT0
T151
T810
AT-05
general purpose diode marking code -06
general purpose diode marking code -08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS
|
OCR Scan
|
T4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cycle
500mW
40-Pin
|
PDF
|
|
|
164AH-10L
Abstract: LH5164AH-10L marking code CEI
Text: I ' SHARP ‘ LH 5 1 6 AH 1 Contents 1. Description 2 2. Pin Configuration 2 3. Truth Table * . 3 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions 4 7. DC Electrical Characteristics 4 8. AC Electrical Characteristics
|
OCR Scan
|
DIP28-P-60Ã
164AH-10L
LH5164AH-10L
marking code CEI
|
PDF
|
DIODE smd marking Ak
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE DF10LC30 U nit‘mm Package : STO-220 Weight lJ>g Typ 102 30 0V 10A Feature • SMD • SMD • e y 'f x • Low Noise • trr= 3 0 n s • trr-3 0 n s 4.7 Main Use • T .'f • D C /D C 3 y i { - 9 • Switching Regulator
|
OCR Scan
|
DF10LC30
STO-220
J532-1)
DIODE smd marking Ak
|
PDF
|
SG30TC15M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode • fl-tlH O U T L IN E S G 30T C 1 5 M 150V 30A Feature • Tj=1751C • Tj=175°C • High lo Rating • Full Molded • 1SIr=40|jA • Low Ir=40|jA • U lc x u • Resistance for thermal run-away Main Use • X 'f'yf-y'fM M
|
OCR Scan
|
SG30TC15M
FTO-220G
waveti50Hz-t
CJ533-1
SG30TC15M
|
PDF
|
20LC20u
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode l ^ t l l DF20LC20US OUTLINE U n it‘m m Package : STO -220 W eight lJ> g T y p 10.2 200V 20A Dale code ^ Control No Feature • SMD • Low Noise • SM D • e y 'f x • trr=25ns @ T y p e No. +«- a il • trr-25ns
|
OCR Scan
|
DF20LC20US
trr-25ns
20LC20U
i50llzâ
J532-1)
20LC20u
|
PDF
|
SG10TC15M
Abstract: D 92 M - 02 DIODE c 92 M - 02 DIODE
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 10T C 1 5 M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ n?hSE»(09) 15 0 V 10A 4.5 Feature • Tj=1751C • Tj=175°C • Full Molded • I r=15|jA • Lo w Ir=15^ iA • Resistance for thermal run-away
|
OCR Scan
|
SG10TC15M
FTO-220G
i50HzT
CJ533-1
SG10TC15M
D 92 M - 02 DIODE
c 92 M - 02 DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode l ^ DF20LC30 t l l O U T L IN E U nit‘mm Package : STO -220 Weight lJ>g Typ 102 300V 20A Feature • SMD • SM D • e y 'f x • Low Noise • trr=30ns • trr-3 0 n s 4.7 Main Use • T . 'f • Switching Regulator
|
OCR Scan
|
DF20LC30
J532-1)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm S G 30T C 1OM Unit: mm Package : FTO-220G Weight L54g Typ o » h E # (M ) 100V 30A m wm o u tlin e 4.5 Feature • Tj=175°C • Tj=175°C • Full Molded • 7)IÆ-JUK • 1SlR=40pA • L o w Ir = 4 0 ^ iA • Ü & H tii
|
OCR Scan
|
SG30TC1OM
FTO-220G
50Hzr
CJ533-1
|
PDF
|
SG10SC6M
Abstract: marking XN
Text: Schottky Barrier Diode Twin Diode • fl- tlH OUTLINE SG10SC6M 60 V 10A Feature • Tj=1751C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC Z \ y j K - $ • DC/DC Converter • m m .'f- h . 0A#t§ • m m .rtt-s z n m m • Home Appliance, Game, Office Automation
|
OCR Scan
|
SG10SC6M
FTO-220G
50Hz-C
marking XN
|
PDF
|
transistor WL 431
Abstract: 2N700A BUV pnp 50a MW1131
Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,
|
OCR Scan
|
MIL-S-19500/123A
-S-19500/123
2N700A
-65to
70MHz
5961-A085
transistor WL 431
2N700A
BUV pnp 50a
MW1131
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode l ^ DE5LC40 t l l O U T L IN E Unit I mm Weight 0.326g Typ Package I E-pack m 40 0V 5A Feature • SMD G6 • SM D • Low Noise • trr=50ns • trr- 5 0 n s • T . 'f • Switching Regulator • DC/DC 3 y i { - 9 • D C /D C C onverter
|
OCR Scan
|
DE5LC40
i50llzâ
J532-1)
|
PDF
|
