Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual NPN Transistors FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
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300mW
100MHz
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KTC812E
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 D The follwing characteristics are common for Q1, Q2. P SYMBOL RATING UNIT
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KTC812E
KTC812E
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KTC812U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.
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KTC812U
KTC812U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.
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KTC812U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 D The follwing characteristics are common for Q1, Q2. P SYMBOL RATING UNIT
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KTC812E
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SC74A
Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,
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UMW10N
FMW10
FMG12
SC-74A
SC-88A
SC-74A
SC-88A,
SC74A
transistor w10
npn transistor w6
marking W8 transistor
transistor w10 18
marking W10
DTC144EK
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.1±0.05 2 5 3 4 0.48 Equivalent Circuit and Bias Resistor Values
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RN4985FS
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RN4985FS
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
RN4985FS
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
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PBHV8540T
Abstract: PBHV9040T IEC 62-50 code MARKING CODE SMD IC
Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV8540T
O-236AB)
PBHV9040T.
AEC-Q101
PBHV8540T
PBHV9040T
IEC 62-50 code
MARKING CODE SMD IC
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MARKING CODE SMD IC
Abstract: PBHV8540T PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV8540T
O-236AB)
PBHV9040T.
AEC-Q101
PBHV8540T
MARKING CODE SMD IC
PBHV9040T
IEC 62-50 code
SMD W4 Transistor
SOT23 marking codes
SOT23 NXP power dissipation TO-236AB
NXP TRANSISTOR SMD MARKING CODE SOT23
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RN4985FS
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
RN4985FS
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
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KRC158F
Abstract: parts equivalent KRC157F
Text: SEMICONDUCTOR KRC157F-KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT APPLICATION. FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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KRC157F-KRC159F
KRC157F
KRC158F
KRC159F
KRC157F
KRC158F
parts equivalent
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q1205
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)
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OCR Scan
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C62702-C748
150iiin
E35LD5
flE35bQ5
q1205
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PDF
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BSS63
Abstract: No abstract text available
Text: BEE D • Ô23b320 G G lb704 4 ■ S IP PNP Silicon AF and Switching Transistors BCX 42 BSS 63 SIEMENS/ SPCL-, SEMICONDS T - X 1 '0 7 For general AF applications High breakdown voltage Low collector-emltter saturation voltage Complementary types: BCX 41, BSS 64 NPN
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OCR Scan
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23b320
lb704
Q62702-C945
Q62702-S401
Q62702-C1485
Q62702-S534
BSS63
BSS63
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2005A
Abstract: 2SC3000 J160 transistor marking JB
Text: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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OCR Scan
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2SC3000
2034/2034A
SC-43
7tlt17D7b
2005A
2SC3000
J160
transistor marking JB
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2SA1210
Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage
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2SA1210
0DGB752
2SA1210
2SC2912
FP 1018
JIS G3141
DDD3710
BC PNP Transistor
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage
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BU508D
IS-20MA
IS-313
IS-313A
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PDF
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2SD1401
Abstract: 2042A 5033K
Text: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed
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2SD1401
1268B
1S-126A
IS-20MA
IS-313
IS-313A
2SD1401
2042A
5033K
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BFY52 equivalent
Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device
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OCR Scan
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BFY52 equivalent
ic marking z7
marking C1s
2N2222
2N2475
2N2938
f025
2N2369 equivalent
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BFS36
Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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OCR Scan
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
marking W4 NPN
2N2475
BFS37
f025
MARKING BS
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PDF
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transistor w4
Abstract: BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2
Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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OCR Scan
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
transistor w4
BSS56
f007 AMPLIFIERS
transistors for uhf oscillators
2N2475
f021
f025
ic marking z7
marking Z6
rf marking Y2
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bcy79 equivalent
Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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OCR Scan
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
bcy79 equivalent
2N3053 equivalent
bcy78 equivalent
2N2905a equivalent
f025
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