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KAGA FEI America Inc MB85R256FPF-G-BNDE1 IC FRAM 256KBIT PARALLEL 28SOP
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DigiKey	MB85R256FPF-G-BNDE1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
KAGA FEI America Inc MB85R256FPNF-G-JNE2 IC FRAM 256KBIT PARALLEL 28SOP
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DigiKey	MB85R256FPNF-G-JNE2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
KAGA FEI America Inc MB85R256FPFCN-G-BNDE1 IC FRAM 256KBIT PAR 28TSOP I
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DigiKey	MB85R256FPFCN-G-BNDE1	Tray			128	1 - 10 - 100 - 1000 $6.43094 10000 $6.43094	Buy Now
Mouser Electronics	MB85R256FPFCN-G-BNDE1		7			1 $7.8 10 $7.18 100 $6.29 1000 $5.79 10000 $5.59	Buy Now
KAGA FEI America Inc MB85R256FPNF-G-JNERE2 IC FRAM 256KBIT PARALLEL 28SOP
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DigiKey	MB85R256FPNF-G-JNERE2	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
KAGA FEI America Inc MB85R256FPF-G-BND-ERE1 IC FRAM 256KBIT PARALLEL 28SOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85R256FPF-G-BND-ERE1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MB85R256F Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R256FPFCN-G-BNDE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28TSOP		Original	PDF
MB85R256FPF-G-BNDE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28SOP		Original	PDF
MB85R256FPF-G-BND-ERE1		Fujitsu Electronics America	Integrated Circuits (ICs) - Memory - IC FRAM 256K PARALLEL 28SOP		Original	PDF
MB85R256FPNF-G-JNE2		FUJITSU Semiconductor	IC FRAM 256KBIT PARALLEL 28SOP		Original	PDF
MB85R256FPNF-G-JNERE2		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28SOP		Original	PDF

MB85R256F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MB85R256F Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-1v0-E MB85R256F MB85R256F	PDF
MB85R256FPF-G-BND-ERE1 Abstract: MB85R256F Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-1v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00010-1v0-E MB85R256F MB85R256F 256K-bits 28-pins, FPT-28P-M19 FPT-28P-M17 MB85R256FPF-G-BND-ERE1	PDF
MB85R256FPF Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-2v0-E MB85R256F MB85R256F MB85R256FPF	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-6v0-E MB85R256F MB85R256F	PDF
MB85R256FPF Abstract: 8A10 MB85R256F Marking code M19 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-3v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-3v0-E MB85R256F MB85R256F MB85R256FPF 8A10 Marking code M19	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-6v0-E MB85R256F MB85R256F	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-7v0-E MB85R256F MB85R256F	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-3v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00010-3v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19) FPT-28P-M19 FPT-28P-M17 FPT-28P-M01	PDF
MB85R256FPF Abstract: MB85R256FPF-G-BND-ERE1 Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-2v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00010-2v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19 FPT-28P-M17 FPT-28P-M01 MB85R256FPF MB85R256FPF-G-BND-ERE1	PDF