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    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 00E5bEE SEM « A P X Philips Semiconductors BSS131 Data sheet status P r e lim in a r y s p e c ific a tio n date of issue A p r il 1 9 9 1 N-channel enhancement mode vertical D-MOS FET N AUER PHILIPS/DISCRETE DESCRIPTION QUICK REFERENCE DATA Silicon n-channel enhancement


    OCR Scan     		PDF bbS3T31 00E5bEE BSS131

    fet n-channel pin configuration

    Abstract: BSS131 UGA003
    Text: bbSB'm D025b22 SE4 H A P X P h ilip s S e m ico n d ucto rs BSS131 Data sheet status Prelim inary specification date of issue April 1991 N-channel enhancement mode vertical D-MOS FET N AUER P H I L I P S / D I S C R E T E DESCRIPTIO N PINNING - SOT23 1 D Q U IC K REFERENCE DATA


    OCR Scan     		PDF bbS3T31 BSS131 MBB160 fet n-channel pin configuration BSS131 UGA003

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc