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    MBR2515L Search Results

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    MBR2515L Price and Stock

    onsemi MBR2515L

    DIODE SCHOTTKY 15V 25A TO220-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR2515L Tube 50
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    Bristol Electronics MBR2515L 50 3
    • 1 -
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    • 100 $1.4062
    • 1000 $1.4062
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    Quest Components MBR2515L 160
    • 1 $3.06
    • 10 $3.06
    • 100 $2.04
    • 1000 $1.887
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    MBR2515L 122
    • 1 $3.06
    • 10 $2.04
    • 100 $1.53
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    MBR2515L 40
    • 1 $3
    • 10 $3
    • 100 $1.125
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    onsemi MBR2515LG

    DIODE SCHOTTKY 15V 25A TO220-2
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    DigiKey MBR2515LG Tube
    • 1 -
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    Newark MBR2515LG Bulk 200
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    Rochester Electronics MBR2515LG 29 1
    • 1 $1.33
    • 10 $1.33
    • 100 $1.25
    • 1000 $1.13
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    ComSIT USA MBR2515LG 2
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    New Advantage Corporation MBR2515LG 1,200 1
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    • 100 $1.49
    • 1000 $1.49
    • 10000 $1.39
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    Motorola Semiconductor Products MBR2515L

    RECTIFIER DIODE,SCHOTTKY,15V V(RRM),TO-220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MBR2515L 76
    • 1 $3.06
    • 10 $3.06
    • 100 $2.04
    • 1000 $2.04
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    Component Electronics, Inc MBR2515L 38
    • 1 $3.85
    • 10 $3.85
    • 100 $2.88
    • 1000 $2.5
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    MBR2515L Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR2515L Motorola SWITCHMODE Power Rectifier Original PDF
    MBR2515L On Semiconductor 25A 15V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50 Original PDF
    MBR2515L On Semiconductor SWITCHMODE Power Rectifier Original PDF
    MBR2515L On Semiconductor SWITCHMODE Power Rectifier Original PDF
    MBR2515L On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 15V, 25A, Pkg Style Case 221A-06 Scan PDF
    MBR2515L/D On Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    MBR2515L-D On Semiconductor SWITCHMODE Power Rectifier Original PDF
    MBR2515LG On Semiconductor 25A 15V Schottky Rectifier Original PDF

    MBR2515L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B2515L

    Abstract: MBR2515L
    Text: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR2515L . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide


    Original     		PDF MBR2515L/D MBR2515L B2515L MBR2515L

    MBR2515L

    Abstract: MBR2515LG B2515L diode B2515L
    Text: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		PDF MBR2515L MBR2515L MBR2515L/D MBR2515LG B2515L diode B2515L

    b2515l

    Abstract: No abstract text available
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*


    Original     		PDF MBR2515L MBR2515L/D b2515l

    Untitled

    Abstract: No abstract text available
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER


    Original     		PDF MBR2515L MBR2515L/D

    B2515

    Abstract: B2515L MBR2515L MBR2515LG 100-C1210
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER


    Original     		PDF MBR2515L MBR2515L/D B2515 B2515L MBR2515L MBR2515LG 100-C1210

    B2515L

    Abstract: Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER


    Original     		PDF MBR2515L MBR2515L/D B2515L Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L

    B2515L

    Abstract: dmbr2515l diode B2515L
    Text: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		PDF MBR2515L B2515L O-220 MBR2515L/D MBR2515L B2515L dmbr2515l diode B2515L

    B2515L

    Abstract: No abstract text available
    Text: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		PDF MBR2515L BRD8011/D. MBR2515L/D MBR2515L B2515L

    B2515L

    Abstract: MBR2515LG MBR2515L
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* SCHOTTKY BARRIER RECTIFIER


    Original     		PDF MBR2515L B2515L MBR2515LG MBR2515L

    B2515L

    Abstract: MBR2515L B2515
    Text: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		PDF MBR2515L r14525 MBR2515L/D B2515L MBR2515L B2515

    B2515L

    Abstract: B25-15 MBR2515L diode B2515L
    Text: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		PDF MBR2515L r14525 MBR2515L/D B2515L B25-15 MBR2515L diode B2515L

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MC33362P

    Abstract: ON Semiconductor marking mc33362 751N MC33362 MC33362DW MC33362DWG MC33362DWR2 MC33362DWR2G
    Text: MC33362 High Voltage Switching Regulator The MC33362 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 120 VAC line source. This integrated circuit features an on−chip 500 V/2.0 A SENSEFET power switch, 250 V active off−line startup FET, duty


    Original     		PDF MC33362 MC33362 16-leis MC33362/D MC33362P ON Semiconductor marking mc33362 751N MC33362DW MC33362DWG MC33362DWR2 MC33362DWR2G

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    MBRM110LT1

    Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
    Text: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3


    Original     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 MBRM110LT1 MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360

    418B-04

    Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
    Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35


    Original     		PDF MBR0520LT1, MBR120LSFT1, MBRM110LT1, MBRA210LT3 MBRS130LT3 MBRS410LT3 MBRD835L MBRD1035CTL MBR2030CTL MBRB2535CTL 418B-04 MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


    Original     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA

    MC33362P

    Abstract: uc3842 application circuit
    Text: MC33362 High Voltage Switching Regulator The MC33362 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 120 VAC line source. This integrated circuit features an on−chip 500 V/2.0 A SENSEFETt power switch, 250 V active off−line startup FET, duty


    Original     		PDF MC33362 16-lead PT1950, MC33362 MC33362) MC33362P uc3842 application circuit

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCH MODE Power R ectifier . . . em p lo ying the S cho ttky B arrier princip le in a large m e ta l-to -s ilic o n pow er diod e. S ta te - o f- th e - a r t ge o m e try fe a tu re s e p ita xia l co n stru ctio n w ith oxide


    OCR Scan     		PDF MBR2515L/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by M BR2515L/D MBR2515L Advance Information SWITCHMODE Pow er R ectifiers . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide


    OCR Scan     		PDF BR2515L/D MBR2515L 2PHX33776R-0 MBR2515L/D