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onsemi MBR340RLG DIODE SCHOTTKY 40V 3A AXIAL
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MBR340RLG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MBR340RLG		On Semiconductor	3A 40V Schottky Rectifier		Original	PDF

MBR340RLG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340/D MBR340 MBR340G MBR340RL MBR340RLG
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340 MBR340G MBR340RL MBR340RLG
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Untitled Abstract: No abstract text available Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340/D
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340/D MBR340 MBR340G MBR340RL MBR340RLG
Untitled Abstract: No abstract text available Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340/D