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    MBR50 Price and Stock

    GeneSic Semiconductor Inc MBR50040CT

    DIODE MOD SCHOTT 40V 250A 2TOWER
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    GeneSic Semiconductor Inc MBR50060CT

    DIODE MOD SCHOT 600V 250A 2TOWER
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    GeneSic Semiconductor Inc MBR50045CT

    DIODE MOD SCHOTT 45V 250A 2TOWER
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    GeneSic Semiconductor Inc MBR50030CTR

    DIODE MOD SCHOTT 30V 250A 2TOWER
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    GeneSic Semiconductor Inc MBR500200CT

    DIODE MOD SCHOT 200V 250A 2TOWER
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    Find more MBR50 price and stock on Findchips.com

    MBR50 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR500100CT America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Original PDF
    MBR500100CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 500A 2TOWER Original PDF
    MBR500100CT Micro Commercial Components 500 Amp Schottky Barrier Rectifier 100 Volts Original PDF
    MBR500100CT America Semiconductor MBR500100 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Scan PDF
    MBR500100CT Microsemi Schottky Rectifier Scan PDF
    MBR500100CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Original PDF
    MBR500100CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 500A 2TOWER Original PDF
    MBR500100CTR America Semiconductor MBR500100 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Scan PDF
    MBR500150CT GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 150V 250A 2 TOWER Original PDF
    MBR500150CTR GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 150V 250A 2 TOWER Original PDF
    MBR500200CT GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 250A 2 TOWER Original PDF
    MBR500200CTR GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 250A 2 TOWER Original PDF
    MBR50020CT America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Original PDF
    MBR50020CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 500A 2TOWER Original PDF
    MBR50020CT Micro Commercial Components 500 Amp Rectifier 20 to 45 Volts Schottky Barrier Original PDF
    MBR50020CT Transys Electronics SCHOTTKY DIODES MODULE TYPE 500A Original PDF
    MBR50020CT America Semiconductor MBR50020 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Scan PDF
    MBR50020CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Original PDF
    MBR50020CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 500A 2TOWER Original PDF
    MBR50020CTR America Semiconductor MBR50020 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::500A; case_package::Twin Tower Modules Scan PDF

    MBR50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR5025L

    Abstract: No abstract text available
    Text: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Very Low Forward Voltage Drop Max 0.58 V @ 100°C


    Original     		PDF MBR5025L r14525 MBR5025L/D MBR5025L

    MBR500100CT

    Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT MBR50060CT MBR50080CT k 4026
    Text: MCC MBR50020CT THRU MBR500100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 500 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR50020CT MBR500100CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT MBR50060CT MBR50080CT MBR500100CT MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT MBR50060CT MBR50080CT k 4026

    Untitled

    Abstract: No abstract text available
    Text: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR50020CT MBR50040CTR MBR50020CT MBR50030CT MBR50035CT MBR50040CT

    500AMP

    Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT
    Text: Transys MBR50020CT R THRU MBR50045CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 500A Features High Surge Capability 500Amp Rectifier 20-45 Volts Types Up to 45V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF MBR50020CT MBR50045CT 500Amp MBR50040CT MBR50035CT MBR50030CT

    Untitled

    Abstract: No abstract text available
    Text: MBR500150CT R DACO SEMICONDUCTOR CO., LTD. THRU MBR500200CT(R) SCHOTTKY DIODE MODULE TYPES 500A Features 500Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V RRM Twin Tower A Maximum Ratings R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150


    Original     		PDF MBR500150CT MBR500200CT 500Amp

    Untitled

    Abstract: No abstract text available
    Text: Schottky PowerMod CPT50235 - CPT50245 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045


    Original     		PDF CPT50235 CPT50245 CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045 MBR50045CT

    Untitled

    Abstract: No abstract text available
    Text: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Very Low Forward Voltage Drop Max 0.58 V @ 100°C


    Original     		PDF MBR5025L MBR5025L/D

    Untitled

    Abstract: No abstract text available
    Text: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 500 A Features • High Surge Capability • Types from 45 to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR50045CT MBR500100CTR MBR50060CT MBR50080CT MBR500100CT

    Untitled

    Abstract: No abstract text available
    Text: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR50020CT MBR50040CTR MBR50020CT MBR50030CT MBR50035CT MBR50040CT 175se

    DIODE 638 MOTOROLA

    Abstract: 340E-01 340e-02 MBR5025L
    Text: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA MBR5025L Advance Information SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the


    Original     		PDF MBR5025L/D MBR5025L MBR5025L/D* DIODE 638 MOTOROLA 340E-01 340e-02 MBR5025L

    Untitled

    Abstract: No abstract text available
    Text: MBR500150CT thru MBR500200CTR Silicon Power Schottky Diode VRRM = 150 V - 200 V IF AV = 500 A Features • High Surge Capability • Types from 150 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR500150CT MBR500200CTR MBR500200CT

    440CNQ030

    Abstract: 444CNQ035 444CNQ040 444CNQ045 CPT50235 CPT50240 CPT50245 MBR50035CT MBR50040CT MBR50045CT
    Text: Schottky PowerMod CPT50235 - CPT50245 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045


    Original     		PDF CPT50235 CPT50245 CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045 MBR50045CT 440CNQ030 444CNQ035 444CNQ040 444CNQ045 CPT50240 CPT50245 MBR50035CT MBR50040CT MBR50045CT

    Untitled

    Abstract: No abstract text available
    Text: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR50045CT MBR500100CTR MBR50045CT MBR50060CT MBR50080CT MBR500100CT

    Untitled

    Abstract: No abstract text available
    Text: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 500 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR50020CT MBR50040CTR MBR50030CT MBR50035CT MBR50040CT

    Untitled

    Abstract: No abstract text available
    Text: DACO SEMICONDUCTOR CO.,LTD. MBR50020CT R THRU MBR500100CT(R) Fi gure .1- Typical Forward Characteristics Fi gure .2- Forward Derat ing Curve 300 1000 600 200 Amp Per leg 200 Amp Per leg Instantaneous Forward Current - Ampere 250 Average Forward Rectifier Current - Ampere


    Original     		PDF MBR50020CT MBR500100CT

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MBR5025L 40A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR5025L Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 25 V Average rectified forward current Rated VR IF(AV) 50 @ TC = 125°C


    Original     		PDF MBR5025L O-218AC MIL-PRF-19500,

    MBR5025L

    Abstract: 340E-02
    Text: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR5025L Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the


    Original     		PDF MBR5025L/D MBR5025L MBR5025L 340E-02

    Untitled

    Abstract: No abstract text available
    Text: MCC MBR50020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR50045CT Features • • • • 500 Amp Schottky Barrier Rectifier 20 to 45 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR50020CT MBR50045CT MBR50030CT MBR50035CT MBR50040CT 20V10 MBR50020CT

    Untitled

    Abstract: No abstract text available
    Text: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Very Low Forward Voltage Drop Max 0.58 V @ 100°C


    Original     		PDF MBR5025L r14525 MBR5025L/D

    Untitled

    Abstract: No abstract text available
    Text: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR50045CT MBR500100CTR MBR50045CT MBR50060CT MBR50080CT MBR500100CT

    MBR5045WT

    Abstract: FST5035 FST5040 FST5045 FST5050 MBR5035WT MBR5040WT
    Text: 50Amp Schottky Rectifier FST5035 - FST5050 Dim. Inches Minimum Industry P art Num ber FST5035 FST5040 FST5045 FST5050 MBR5035WT MBR5040WT MBR5045WT Repetitive Peak Reverse Voltage Maximum Minimum .185 .0 8 7 .0 5 9 .0 4 0 .0 7 9 .118 .016 .819 .6 2 7 .215


    OCR Scan     		PDF 50Amp FST5035 FST5050 T0-247AD MBR5035WT FST5040 MBR5040WT FST5045 MBR5045WT FST5050

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR5025L SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the


    OCR Scan     		PDF MBR5025L/D MBR5025L CharacteristicY14 340E-02

    FST5060

    Abstract: MBR5060WT SBL6060PT EE-170
    Text: 50Amp Schottky Rectifier FST5060 Dim. Inches Minimum FST5060 Industry P art Number R epetitive Peak Reverse Voltage MBR5060WT SBL6060PT Maximum Minimum .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M


    OCR Scan     		PDF 50Amp FST5060 T0-247AD MBR5060WT SBL6060PT FST5060 SBL6060PT EE-170

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR5025L M otorola Preferred Device The SW ITCHM O DE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:


    OCR Scan     		PDF MBR5025L