SOF-26
Abstract: SZP-3026Z
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
SOF-26
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MCH185A3R9DK
Abstract: SZM-3166Z SZM3166Z tRANSISTOR 2.7 3.1 3.5 GHZ cw 3166Z
Text: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z
SZM-3166Z
SZM-3166Z"
SZM-3166Z-EVB1
EDS-105462
MCH185A3R9DK
SZM3166Z
tRANSISTOR 2.7 3.1 3.5 GHZ cw
3166Z
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Untitled
Abstract: No abstract text available
Text: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
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Untitled
Abstract: No abstract text available
Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026 P1dB =33.6dBm at 5V 802.11g 54Mb/s Class AB Performance RF IN POUT =26dBm at 2.5% EVM, VCC 5V, 570mA POUT =27dBm at 2.5% EVM,
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RFPA3026
54Mb/s
27dBm
513mA
26dBm
570mA
DS120110
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vpc3 c
Abstract: RF transistor gain 20dB vpc3
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
ItDS110620
DS110620
SZM3066ZSQ
SZM3066ZSR
SZM3066Z
vpc3 c
RF transistor gain 20dB
vpc3
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SZP-3026Z
Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
DS091202
SZP3026Z*
SZP3026Z-EVB1
ma 529
SZP3026
SOF-26
3.5GHz BJT
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Untitled
Abstract: No abstract text available
Text: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z
SZM-3166Z
SZM-3166Zâ
DS110620
SZM3166ZSQ
SZM3166ZSR
SZM3166ZPCK-EVB1
SZM3166Z
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Untitled
Abstract: No abstract text available
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
DS110620
SZP3026ZSQ
SZP3026ZSR
SZP3026Z
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600S100JW250X
Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SZP-3026Z
SOF-26
DS110620
SZP3026ZSQ
SZP3026ZSR
SZP3026Z
SZP3026Z-EVB1
600S100JW250X
113 marking code transistor ROHM
SZP3026
phemt transistor 30Ghz
MCH185A1R0DK
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MCH182CN
Abstract: SZM-3166Z recommended land pattern for 0402 cap
Text: SZM-3166Z SZM-3166Z 3.3 GHz to 3.6 GHz 2W Power Amplifier 3.3 GHz to 3.6 GHz 2W POWER AMPLIFIER Package: QFN, 6 mm x 6 mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z
SZM-3166Z
SZM-3166Z"
SZM3166Z
SZM3166ZPCK-EVB1
DS100622
MCH182CN
recommended land pattern for 0402 cap
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3.5GHz BJT
Abstract: cpe wimax
Text: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-3166Z
SZM-3166Z
SZM-3166Z"
DS110620
SZM3166ZSQ
SZM3166ZSR
SZM3166Z
SZM3166ZPCK-EVB1
3.5GHz BJT
cpe wimax
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Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
DS131017
SZM3066ZSR
SZM3066Z
SZM3066ZPCK-EVB1
SZM3066ZSQ
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Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
EDS-104608
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vpc3-c
Abstract: vpc3 c SZM-3066Z c2a marking recommended land pattern for 0402 cap
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
EDS-104608
vpc3-c
vpc3 c
c2a marking
recommended land pattern for 0402 cap
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Untitled
Abstract: No abstract text available
Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector Input Prematched to ~5
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RFPA3026
RFPA3026
54Mb/s
26dBm
570mA
27dBm
513mA
DS120110
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vpc3 c
Abstract: vpc3-c MCH182C SZM-3066Z vpc3 s
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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SZM-3066Z
SZM-3066Z
o3066Z
SZM3066Z
SZM3166ZPCK-EVB1
DS100622
vpc3 c
vpc3-c
MCH182C
vpc3 s
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